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Article Citation - WoS: 22Citation - Scopus: 24Synthesis and Temperature-Tuned Band Gap Characteristics of Magnetron Sputtered Znte Thin Films(Elsevier, 2020) Isik, M.; Gullu, H. H.; Parlak, M.; Gasanly, N. M.Zinc telluride (ZnTe) is one of the attractive semiconducting compounds used in various optoelectronic devices. The usage of ZnTe in optoelectronic applications directs researchers to search its optical characteristics in great detail. For this purpose, structural and optical properties of magnetron sputtered ZnTe thin films were studied by means of x-ray diffraction and transmission spectroscopy measurements. Structural analyses indicated that ZnTe thin films having cubic crystalline structure were successfully grown on soda-lime glass substrates. Transmittance spectra in the 400-1000 nm were recorded in between 10 and 300 K temperature region. The analyses of absorption coefficient spectra resulted in band gap energies decreasing from around 2.31 (10 K) to 2.26 eV (300 K). Temperature dependency of gap energy was studied by Varshni and O'Donnell-Chen relations to determine various optical parameters like absolute zero temperature band gap energy, change of gap energy with temperature, phonon energy.Article Citation - WoS: 2Citation - Scopus: 3Electrical Characterization of Zninse2 Thin-Film Heterojunction(Springer, 2019) Gullu, H. H.; Parlak, M.ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high forward-bias region, the series and shunt resistances were calculated with the help of parasitic resistance relations, yielding room-temperature values of 9.54 x 10(2) Omega cm(2) and 1.23 x 10(3) Omega cm(2), respectively. According to the analysis of the current flow in the forward-bias region, abnormal thermionic emission due to the variation of the ideality factor with temperature and space-charge-limited current processes were determined to be the dominant conduction mechanisms in this heterostructure. In the reverse-bias region, the tunneling mechanism was found to be effective in the leakage current flow with trap density of 10(6) cm(-3). Spectral photocurrent measurements were carried out to investigate the spectral working range of the device structure. The main photocurrent peaks observed in the spectrum corresponded to the band-edge values of the active thin-film layers.Article Citation - WoS: 42Citation - Scopus: 41Analysis of Forward and Reverse Biased Current-Voltage Characteristics of Al/Al2< Schottky Diode With Atomic Layer Deposited Al2o3< Thin Film Interlayer(Springer, 2019) Gullu, H. H.; Yildiz, D. E.The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias regions, the temperature-dependent I-Vcharacteristics are detailed in terms of diode parameters and dominant conduction mechanisms. Due to the existence of Al2O3 film layer and series resistance in the diode structure, current flow under the forward bias is observed in a deviation from pure exponential characteristics. The diode parameters are estimated from thermionic emission model with non-unity ideality factor, and this non-ideal behavior is resulted in the ideality factors greater than two. In addition to these values, zero-bias barrier height is found to be strongly temperature dependent, and this variation indicates a presence of inhomogeneties in the barrier according to Gaussian distribution (GD) approximation. This fact is investigated plotting characteristic plot of this model and by extracting mean barrier height with its standard deviation. In order to complete the work on the forward I-V region, the carrier transport characteristics of the diode are explained on the basis of thermionic emission mechanism with a GD of the harrier heights. In accordance with this approximation, the conventional Richardson plot exhibits non-linearity behavior and modified current relation based on GD model is used to calculate mean barrier height and Richardson constant. In addition, the values of parasitic resistances are determined using Ohm's law as a function of temperature for all bias voltage spectra. In the reverse bias region, Poole-Frenkel effect is found to be dominant on the conduction associated with the barrier lowering, and barrier height in the emission process from the trapped states, and high-frequency dielectric constant of Al2O3 film layer is calculated.Article Citation - WoS: 3Citation - Scopus: 3Fabrication of Cdsexte1-X Thin Films by Sequential Growth Using Double Sources(Elsevier, 2021) Demir, M.; Gullu, H. H.; Terlemezoglu, M.; Parlak, M.CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 degrees C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9 degrees and 25.5 degrees corresponds to (111) direction in cubic zinc-blend structure. Raman modes of CdTe were observed at 140 and 168 cm(-1), while Raman modes of CdSe films were detected at 208 and 417 cm(-1). The post-annealing process was found to be an effective method in order to combine both diffraction peaks and the vibrational modes of CdTe and CdSe, consequently to form CST ternary alloy. Transmission spectroscopy analysis revealed that CST films have direct band gap value of 1.6 eV.Article Citation - WoS: 3Citation - Scopus: 4Analysis of Temperature-Dependent Transmittance Spectra of Zn0.5in0.5< (zis) Thin Films(Springer, 2019) Isik, M.; Gullu, H. H.; Delice, S.; Gasanly, N. M.; Parlak, M.Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550-950nm and in temperature range of 10-300K. Transmission spectra shifted towards higher wavelengths (lower energies) with increasing temperature. Transmission data were analyzed using Tauc relation and derivative spectroscopy. Analysis with Tauc relation was resulted in three different energy levels for the room temperature band gap values of material as 1.594, 1.735 and 1.830eV. The spectrum of first wavelength derivative of transmittance exhibited two maxima positions at 1.632 and 1.814eV and one minima around 1.741eV. The determined energies from both methods were in good agreement with each other. The presence of three band gap energy levels were associated to valence band splitting due to crystal-field and spin-orbit splitting. Temperature dependence of the band gap energies were also analyzed using Varshni relation and gap energy value at absolute zero and the rate of change of gap energy with temperature were determined.Article Citation - WoS: 1Citation - Scopus: 1Material Characterization of Thermally Evaporated Znsn2te4< Thin Films(Elsevier Gmbh, Urban & Fischer verlag, 2019) Gullu, H. H.Polycrystalline and stoichiometric ZnSn2Te4 (ZST) thin films were deposited on glass substrates by sequential evaporation of elemental powder sources. The deposited films were annealed in nitrogen atmosphere at annealing temperature ranging 100-300 degrees C. Under post-annealing treatments, the composition, structural, surface morphological, optical and electrical characteristics of the films were investigated. Annealing treatments lead to maintain the structural characteristics with the possible change in atomic concentration of the constituent elements in limit of detection and crystallinity of the films increased with increasing annealing temperature. Grainy surface morphology was observed in as-grown and annealed films and densely packed appearance of the surface of the samples indicates uniform deposition of the film over the entire substrate surface. Under the aim of visible light harvesting in the applications of thin film photovoltaics, normal-incidence transmittance measurements were performed and the direct band gap values were found in the range of 1.8-2.1 eV. Temperature dependent conductivity characteristics of the films were investigated under dark condition and the observed conductivity profiles were found in Arrhenius behavior with temperature dominated by the thermionic emission model.Article Citation - WoS: 3Citation - Scopus: 6Structural and Optical Properties of Thermally Evaporated Cu-Ga (cgs) Thin Films(Elsevier, 2018) Gullu, H. H.; Isik, M.; Gasanly, N. M.The structural and optical properties of thermally evaporated Cu-Ga-S (CGS) thin films were investigated by Xray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM) and optical transmittance measurements. The effect of annealing temperature on the results of applied techniques was also studied in the present paper. EDS results revealed that each of the elements, Cu, Ga and S are presented in the films and Cu and Ga concentration increases whereas S concentration decreases within the films as annealing temperature is increased. XRD pattern exhibited four diffraction peaks which are well-matched with those of tetragonal CuGaS2 compound. AFM images were recorded to get knowledge about the surface morphology and roughness of deposited thin films. Transmittance measurements were applied in the wavelength region of 300-1000 nm. Analyses of the absorption coefficient derived from transmittance data resulted in presence of three distinct transition regions in each thin films with direct transition type. Crystal-field and spin-orbit splitting energies existing due to valence band splitting were also calculated using quasicubic model.Article Citation - WoS: 9Citation - Scopus: 9Optical Band Gap and Dispersion of Optical Constants of Cu-Ga Thin Films(Elsevier Gmbh, 2019) Isik, M.; Gullu, H. H.; Coskun, E.; Gasanly, N. M.Thermally deposited Cu-Ga-S thin films were optically characterized by means of experimental techniques of transmission measurements. The analyses of transmittance spectra were accomplished by derivative spectrophotometry analyses to get gap energies of thin films. The transmittance spectra of thin films annealed at different temperatures presented interference fringes which were analyzed by Swanepoel envelope method. The wavelength dependencies of optical parameters; refractive index (n), real part of complex dielectric function (epsilon(re)) and extinction coefficient (k) were reported in the weak absorption region. The photon energy dependencies of n and epsilon(re) were analyzed using single-oscillator and Spitzer-Fan models, respectively.Article Citation - WoS: 13Citation - Scopus: 12A Study on Electrical Properties of Au/4h-sic Schottky Diode Under Illumination(Springer, 2021) Yildiz, D. E.; Karadeniz, S.; Gullu, H. H.Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform this, the currentvoltage (I-V) characteristics of the Schottky-type diode are analyzed at room temperature. The performance parameters such as saturation current (I-0), barrier height (Phi(B)), ideality factor (n) and series resistance (R-s) are found to be illumination dependent. The reverse biased I - V characteristics under incident light indicate high photo-sensitivity as compared to the response at forward bias. Thus, this result is investigated in detail according to both Schottky and Poole-Frenkel effects. It is found that the Poole-Frenkel mechanism is dominant in the reverse biased region. The Au/4H-SiC Schottky junction has a strong photo-current response to the different illumination intensities and transient photocurrent characteristics of the fabricated device are studied at the illumination intensities of 50 and 100 mW/cm(2). All experimental results indicate that the Au/4H-SiC Schottky diode, with a valuable response to the illumination together with change in illumination intensity, can be used for optoelectronic applications.Article Citation - WoS: 12Citation - Scopus: 13Analysis of Temperature-Dependent Forward and Leakage Conduction Mechanisms in Organic Thin Film Heterojunction Diode With Fluorine-Based Pcbm Blend(Springer, 2020) Yildiz, D. E.; Gullu, H. H.; Toppare, L.; Cirpan, A.The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) as a partner of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Two-order of magnitude rectification ratio was achieved, and the temperature-dependent values of saturation current, zero-bias barrier height, and ideality factor were extracted according to the thermionic emission model. The temperature responses of these diode parameters showed an existence of inhomogeneity in the barrier height formation. As a result, the observed non-ideal behavior was explained by Gaussian distribution of barrier height where low-barrier regions are effective in the forward biased conduction mechanism at low temperatures. Together with this analysis, series resistances were evaluated using Cheung's functions and also density of interface states were investigated. On the other hand, reverse biased current flow was found under the dominant effect of Poole-Frenkel effects associated with these interfacial traps. The reverse current conduction mechanism was detailed by calculating characteristic field-lowering coefficients and barrier height values in the emission process from the trapped state in the range of temperatures of interest.
