Optical Band Gap and Dispersion of Optical Constants of Cu-Ga Thin Films

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2019

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Elsevier Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Thermally deposited Cu-Ga-S thin films were optically characterized by means of experimental techniques of transmission measurements. The analyses of transmittance spectra were accomplished by derivative spectrophotometry analyses to get gap energies of thin films. The transmittance spectra of thin films annealed at different temperatures presented interference fringes which were analyzed by Swanepoel envelope method. The wavelength dependencies of optical parameters; refractive index (n), real part of complex dielectric function (epsilon(re)) and extinction coefficient (k) were reported in the weak absorption region. The photon energy dependencies of n and epsilon(re) were analyzed using single-oscillator and Spitzer-Fan models, respectively.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Coskun, Emre/0000-0002-6820-3889; Gullu, Hasan Huseyin/0000-0001-8541-5309

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Optical properties, I-III-VI type semiconductors, Swanepoel method

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Volume

186

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Start Page

147

End Page

154

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