A study on electrical properties of Au/4H-SiC Schottky diode under illumination

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2021

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Springer

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Department of Basic English (Prep School)
Atilim University Department of Basic English, have the goal to turn each of you into a member of world citizens highly capable in their field of study. In this way, we also would like to add to the cumulative knowledge level in the world and contribute to the development of our own country. Aware of our responsibilities towards this goal, we constantly update our language teaching approaches and applications. In this process, we utilize the benefits of the technology and we accommodate a tablet-based language teaching model in our classes.
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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform this, the currentvoltage (I-V) characteristics of the Schottky-type diode are analyzed at room temperature. The performance parameters such as saturation current (I-0), barrier height (Phi(B)), ideality factor (n) and series resistance (R-s) are found to be illumination dependent. The reverse biased I - V characteristics under incident light indicate high photo-sensitivity as compared to the response at forward bias. Thus, this result is investigated in detail according to both Schottky and Poole-Frenkel effects. It is found that the Poole-Frenkel mechanism is dominant in the reverse biased region. The Au/4H-SiC Schottky junction has a strong photo-current response to the different illumination intensities and transient photocurrent characteristics of the fabricated device are studied at the illumination intensities of 50 and 100 mW/cm(2). All experimental results indicate that the Au/4H-SiC Schottky diode, with a valuable response to the illumination together with change in illumination intensity, can be used for optoelectronic applications.

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Yıldız, Dilber Esra/0000-0003-2212-199X;

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9

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Volume

32

Issue

15

Start Page

20130

End Page

20138

URI

https://doi.org/10.1007/s10854-021-06480-7
 https://hdl.handle.net/20.500.14411/2021

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