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Article Citation - WoS: 4Citation - Scopus: 6An Automata Networks Based Preprocessing Technique for Artificial Neural Network Modelling of Primary Production Levels in Reservoirs(Elsevier, 2007) Kilic, Hurevren; Soyupak, Selcuk; Tuzun, Ilhami; Ince, Ozlem; Basaran, GokbenPrimary production in lakes and reservoirs develops as a result of complex reactions and interactions. Artificial neural networks (ANN) emerges as an approach in quantification of primary productivity in reservoirs. Almost all of the past ANN applications employed input data matrices whose vectors represent either water quality parameters or environmental characteristics. Most of the time, the components of input matrices are determined using expert opinion that implies possible factors that affect output vector. Major disadvantage of this approach is the possibility of ending-up with an input matrix that may have high correlations between some of its components. In this paper, an automata networks (AN) based preprocessing technique was developed to select suitable and appropriate constituents of input matrix to eliminate redundancy and to enhance calculation efficiency. The proposed technique specifically provides an apriori rough behavioral modeling through identification of minimal AN interaction topology. Predictive ANN models of primary production levels were developed for a reservoir following AN based pre-modeling step. The achieved levels of model precisions and performances were acceptable: the calculated root mean square error values (RMSE) were low; a correlation coefficient (R) as high as 0.83 was achieved with an ANN model of a specific structure. (c) 2006 Elsevier B.V. All rights reserved.Article Citation - WoS: 2Citation - Scopus: 2Properties of Tl4se3< Single Crystals and Characterization of Ag/Tl4< Schottky Barrier Diodes(Elsevier Science Bv, 2010) Qasrawi, A. F.; Gasanly, N. M.The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect in addition to the temperature dependent current-voltage characteristics and photosensitivity of the Ag/Tl4Se3S Schottky barrier diode were studied. The X-ray diffraction patterns have revealed that the crystal exhibited a single phase of tetragonal structure belonging to the D-4h(18) - 14mcm space group. A Debye temperature of 100 K was calculated using the results of the X-ray diffraction analysis. The dark electrical resistivity and Hall-effect measurements indicated that the samples exhibits p-type conduction with an electrical resistivity, carrier concentration and Hall mobility of 6.20 x 10(3) Omega cm, 1.16 x 10(12) cm(-3) and 873 cm(2) V-1 s(-1), respectively. The crystals were observed to have Schottky diode properties. The Ag/Tl4Se3S Schottky barrier device bias voltage was observed to depend on the crystal direction and on temperature. It was found that the calculated energy barrier height decreased and the diode ideality factor increased with temperature decreasing. The photosensitivity-light intensity dependence of this device was found to be linear reflecting the ability of using it in optoelectronics. (C) 2009 Elsevier B.V. All rights reserved.Article Citation - WoS: 7Citation - Scopus: 10Combined Use of Ultrasonic-Assisted Drilling and Minimum Quantity Lubrication for Drilling of Niti Shape Memory Alloy(Taylor & Francis inc, 2023) Namlu, Ramazan Hakki; Lotfi, Bahram; Kilic, S. Engin; Yilmaz, Okan Deniz; Akar, SametThe drilling of shape-memory alloys based on nickel-titanium (Nitinol) is challenging due to their unique properties, such as high strength, high hardness and strong work hardening, which results in excessive tool wear and damage to the material. In this study, an attempt has been made to characterize the drillability of Nitinol by investigating the process/cooling interaction. Four different combinations of process/cooling have been studied as conventional drilling with flood cooling (CD-Wet) and with minimum quantity lubrication (CD-MQL), ultrasonic-assisted drilling with flood cooling (UAD-Wet) and with MQL (UAD-MQL). The drill bit wear, drilling forces, chip morphology and drilled hole quality are used as the performance measures. The results show that UAD conditions result in lower feed forces than CD conditions, with a 31.2% reduction in wet and a 15.3% reduction in MQL on average. The lowest feed forces are observed in UAD-Wet conditions due to better coolant penetration in the cutting zone. The UAD-Wet yielded the lowest tool wear, while CD-MQL exhibited the most severe. UAD demonstrated a & SIM;50% lower tool wear in the wet condition than CD and a 38.7% in the MQL condition. UAD is shown to outperform the CD process in terms of drilled-hole accuracy.Article Citation - WoS: 40Citation - Scopus: 42Illumination and Voltage Effects on the Forward and Reverse Bias Current-Voltage (i-V) Characteristics in In/In2< Photodiodes(Springer, 2021) Yukselturk, Esra; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, Mehmet; Altindal, SemsettinThe illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20-100 mW/cm(2)) between +/- 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (phi(Bo)) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (I-ph/I-dark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (V-oc) and short-current (I-sc) were found to be 0.36 V and 2.87 mA under 100 mW.cm(-2) illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V-0.5 plots. The energy-dependent surface states (N-ss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm(2).Article Citation - WoS: 4Citation - Scopus: 5Space Efficiency in Tall Hotel Towers(Mdpi, 2024) Aslantamer, Ozlem Nur; Ilgin, Huseyin EmreMaximizing spatial utilization within tall buildings stands as a paramount planning consideration for ensuring project feasibility, particularly accentuated ins the context of hotel constructions. To date, no comprehensive study has addressed this issue while considering crucial architectural and structural planning factors. This article fills this gap by using a case study method based on data from 31 contemporary tall hotel towers. The findings revealed several key points: (i) central core typology was mostly utilized; (ii) prismatic buildings were the most prevalent forms; (iii) shear-walled frame systems were predominantly employed; (iv) concrete was the preferred choice for hotel construction; (v) the average space efficiency and the ratio of core area to gross floor area (GFA) averaged 81.2% and 16%, respectively; (vi) the range changed from a minimum of 70% to 4% to a maximum of 94% to 28%; and (vii) space efficiency showed an inverse relationship with the height of the building. It is anticipated that this paper will assist architects and structural engineers as well as builders involved in the planning of hotel developments.Article Citation - WoS: 11Citation - Scopus: 14Sustainability Inclusion in Informatics Curriculum Development(Mdpi, 2020) Mishra, Deepti; Mishra, Alok(1) Background: Presently, sustainability is a crucial issue for human beings due to many disasters owing to climate change. Information Technology (IT) is now part of everyday life in society due to the proliferation of gadgets such as mobile phones, apps, computers, information systems, web-based systems, etc. (2) Methods: The analysis is based on recent ACM/IEEE curriculum guidelines for IT, a rigorous literature review as well as various viewpoints and their relevance for sustainability-oriented curriculum development; it also includes an assessment of key competencies in sustainability for proposed units in the IT curriculum. (3) Results: Sustainability is a critical subject for prospective IT professionals. Therefore, it is imperative to motivate and raise awareness among students and the faculty community regarding sustainability through its inclusion in the Informatics curriculum. This paper focuses on how sustainability can be included in various courses of the Informatics curriculum. It also considers recent ACM/IEEE curriculum guidelines for IT professionals, which assert that IT students should explore IT strategies required for developing a culture of green and sustainable IT. (4) Conclusions: This paper provides guidelines for IT curriculum development by incorporating sustainable elements in courses, so that future IT professionals can learn and practice sustainability in order to develop a sustainable society.Article Citation - WoS: 9Citation - Scopus: 9Optical Dynamics in the Ag/Α-ga2< Layer System(Elsevier Sci Ltd, 2018) Alharbi, S. R.; Qasrawi, A. F.In this work, thin films of Ga2S3 are deposited onto 150 nm thick transparent Ag substrate by the physical vapor deposition technique under vacuum pressure of 10(-5) mbar. The films are studied by the X-ray diffraction and optical spectrophotometry techniques. It is found that the Ag substrate induced the formation of the monoclinic alpha-Ga2S3 polycrystals. The transparent Ag substrate also changed the preferred optical transition in Ga2S3 from direct to indirect It also increased the light absorption by 79 and 23 times at incident light energies of 2.01 and 2.48 eV, respectively. In addition, a red shift in all types of optical transitions is observed. Some the extended energy band tails of Ag appears to form interbands in the band gap of Ga2S3. These interbands strongly attenuated the dielectric and optical conduction parameters. Particularly, an enhancement in the dielectric constant values and response to incident electromagnetic field is observed. The Drude-Lorentz modeling of this interface has shown that the free carrier density, drift mobility, plasmon frequency and reduced electron-plasmon frequency in Ga2S3 increases when the Ag substrate replaced the glass or other metals like Yb, Al and Au. The nonlinear optical dynamics of the Ag/Ga2S3 are promising as they indicate the applicability of this interface for optoelectronic applications.Article Citation - WoS: 47Citation - Scopus: 44Investigation of Structural, Electronic, Magnetic and Lattice Dynamical Properties for Xcobi (x: Ti, Zr, Hf) Half-Heusler Compounds(Elsevier, 2020) Surucu, Gokhan; Isik, Mehmet; Candan, Abdullah; Wang, Xiaotian; Gullu, Hasan HuseyinStructural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase XCoBi compounds have been analyzed and the most stable order has been found as paramagnetic nature. The theoretical studies on gamma-phase structures resulted in band gap energies of 0.96, 0.99 and 0.98 eV for TiCoBi, ZrCoBi and HfCoBi semiconducting compounds, respectively. Born-Huang criteria applied on elastic constants of interest compounds has indicated that gamma-phase is also mechanically stable for all studied compounds. In addition, various mechanical, lattice dynamical and thermodynamical parameters of XCoBi compounds have been calculated in the present study.Article Citation - WoS: 21Citation - Scopus: 21Synthesis and Properties of a Novel Redox Driven Chemiluminescent Material Built on a Terthienyl System(Pergamon-elsevier Science Ltd, 2009) Atilgan, Nurdan; Algi, Fatih; Onal, Ahmet M.; Cihaner, AtillaA novel redox driven chemiluminescent material built on a terthienyl system, namely 5,7-di-ethylenedioxythiophen-2-yl-2,3-dihydro-thieno[3,4-d]pyridazine-1,4-dione (ETE-Lum), which is soluble in both organic media and basic aqueous solution was synthesized and characterized. Furthermore, its polymer, PETE-Lum, which is one of the most rare examples of chemiluminescent polymeric materials bearing a pyridazine unit, was obtained successfully by electrochemical means. Both of the materials give chemiluminescence either by treatment with oxidants (H2O2 and/or KMnO4) or by the application of a potential pulse. (C) 2009 Elsevier Ltd. All rights reserved.Article Citation - WoS: 9Citation - Scopus: 8Exploring the Optical Dynamics in the Ito/As2< Interfaces(Springer, 2019) Al Garni, S. E.; Qasrawi, A. F.In this work, the effects of indium tin oxide (ITO) substrates on the structural, compositional, optical dielectric and optical conduction properties of arsenic selenide thin films are investigated. The As2Se3 films which are prepared by the thermal deposition technique under vacuum pressure of 10(-5) mbar exhibit an induced crystallization process, improved stoichiometry, increased optical transmittance in the visible range of light and increased dielectric response in the infrared range of light upon replacement of glass substrates by ITO. The ITO/As2Se3 interfaces exhibit conduction and valence band offset values of 0.46 eV and 0.91 eV, respectively. The experimental optical conductivity spectra are theoretically reproduced with the help of the Drude-Lorentz approach for optical conduction. In accordance with this approach, owing to the improved crystallinity of the arsenic selenide, the deposition of As2Se3 onto ITO substrates increases the drift mobility value from similar to 17.6 cm(2)/Vs to 34.6 cm(2)/Vs. It also reduces the density of free carriers by one order of magnitude. The ITO/As2Se3/C heterojunction devices which are tested as band filters which may operate in the frequency domain of 0.01-3.0 GHz revealed low pass filter characteristics below 0.35 GHz and band pass filter characteristics in the remaining spectral range.
