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Article Citation - WoS: 26Citation - Scopus: 26Photoelectronic, optical and electrical properties of TlInS2 single crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the donor energy levels located at 360, 280, 152 and 112 meV were detected. The photocurrent-illumination intensity dependence follows the law I-Ph proportional to F-gamma with gamma being 1.0 (linear), 0.5 (sublinear), 1.0 (linear) and 1.3 (supralinear) at low, moderate, high and very high illumination intensities indicating the monomolecular in the bulk, bimolecular and strong recombination at the surface, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature (T-m) 245 K. T is observed to shift to higher temperature as F increases, and disappears in the region where I-Ph-F dependence is supralinear. The phenomenon is attributed to the exchange in the behavior of the sensitizing and recombination centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.Article Citation - WoS: 28Citation - Scopus: 27Photoelectronic and Electrical Properties of Cuin5s8< Single Crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent-illumination intensity dependence (F) follows the law I(ph)alphaF(gamma), with gamma being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, tau(n), is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, tau(n) decrease with decreasing illumination intensity. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 4Citation - Scopus: 4Simulation of Through-Hardening of Sae 52100 Steel Bearings - Part Ii: Validation at Industrial Scale(Wiley-v C H verlag Gmbh, 2016) Evcil, G. E.; Mustak, O.; Simsir, C.In this study, the material dataset presented in part I of this article is validated at industrial scale in batch through-hardening of bearing races. The material dataset acquired is implemented in a commercial heat treatment simulation software. Heat transfer coefficients for the oil and salt bath are determined by using a commercial standard quench probe. Zone temperatures and transfer times of the roller-belt furnace are measured directly from the system. Through-hardening of inner ring (IR) of 6813 bearing in oil and salt bath is simulated considering most of the industrial details. Finally, predicted dimensional changes are compared with the coordinate measurement results and a good agreement is achieved. It is concluded that determined material and process data, idealizations and simulation procedure can be considered "validated" for further improvement of the industrial process.Article Citation - WoS: 1Citation - Scopus: 1Chemical Composition Optimization and Isothermal Transformation of Δ-Transformation Plasticity Steel for the Third-Generation Advanced High-Strength Steel Grade(Wiley-v C H verlag Gmbh, 2024) Okur, Onur; Davut, Kemal; Palumbo, Gianfranco; Nalcaci, Burak; Guglielmi, Pasquale; Yalcin, Mustafa Alp; Erdogan, MehmetA new low-manganese transformation-induced plasticity steel is designed with optimized nickel content to achieve superior strength and ductility while minimizing the use of expensive nickel. The steel is optimized using JMatPro software, then cast, and hot rolled. To assess the effect of intercritical annealing on austenite (martensite at room temperature) volume fraction and carbon content, hot-rolled steel samples quenched from different annealing temperatures (680-1100 degrees C) are used. Additionally, hot-rolled steel coupons are intercritically annealed at about 50% austenite formation temperature (740 degrees C) and then subjected to isothermal treatments at 300-425 degrees C for varying times (10-90 min). After optimizing these treatments to maximize retained austenite (RA), tensile specimens are heat-treated first at 740 degrees C and then isothermally at 325 degrees C. Thermodynamic calculations suggest that aluminum combined with silicon may lead to the delta ferrite formation, and even minimal nickel content can stabilize a considerable amount of austenite. In the experimental studies, it is shown that lower-temperature bainitic holding enhances austenite stability by enriching the carbon content. Optimized two-stage heat treatments yield up to 25.8% RA, with a tensile strength of 867.2 MPa and elongation of 40.6%, achieving a strength-elongation product of 35.2 GPax%, surpassing the third-generation advanced high-strength steel grades minimum requirement of 30 GPax%.Article Citation - WoS: 5Citation - Scopus: 6Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor(Wiley-v C H verlag Gmbh, 2003) Kayed, TSLithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 6Citation - Scopus: 6Dielectric Dispersion at the Mn/Znpc Interfaces(Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef F.; Zyoud, Hadeel M.Herein, the effects of manganese transparent (150 nm) substrates on the structural, nonlinear optical, and dielectric properties of zinc phthalocyanine are explored. ZnPc thin films are observed to exhibit deformed crystal structure associated with remarkable enhancement in the light absorbability by 21 times at 2.62 eV and by 173 times in the near-infrared (NIR) region of light upon replacement of glass by transparent Mn substrates. The Mn layer also causes a redshift in the energy bandgap, allows generation of free carrier absorption process and increases the dielectric constant by more than 169% in the NIR region. The interaction between the manganese substrates with the organic ZnPc thin layers decreases the free holes density, widens the plasmon frequency range, and improves the drift mobility of holes. The nonlinear dielectric response with the highly improved light absorbability in the NIR range of light nominates the Mn/ZnPc thin films for optoelectronic applications.Article Citation - WoS: 6Citation - Scopus: 6Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices(Wiley-v C H verlag Gmbh, 2015) Al Garni, S. E.; Qasrawi, A. F.In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.Article Citation - WoS: 39Citation - Scopus: 44Application of Continuum Damage Mechanics in Discontinuous Crack Formation: Forward Extrusion Chevron(Wiley-v C H verlag Gmbh, 2008) Soyarslan, Celal; Tekkaya, A. Erman; Akyuz, UgurhanMaterializing Continuum Damage Mechanics (CDM), numerical modeling of discrete internal cracks, namely central bursts, in direct forward extrusion process is presented. Accordingly, in a thermodynamically consistent setting, a local Lemaitre variant damage model with quasi-unilateral evolution is coupled with hyperelastic-plasticity. The formulations are constructed in the principal axes where simultaneous local integration schemes are efficiently developed. To this end, the framework is implemented as ABAQUS/VUMAT subroutine to be used in an explicit FE solution scheme, and utilized in direct forward extrusion simulations for bearing steel, 100Cr6. Discontinuous cracks are obtained with the element deletion procedure, where the elements reaching the critical damage value are removed from the mesh. The periodicity of the cracks shows well accordance with the experimental facts. The investigations reveal that, application of the quasi-unilateral conditions together with the crack closure parameter has an indispensable effect on the damage accumulation zones by determining their internal or superficial character. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 41Citation - Scopus: 48Platinated Copper(3-Clip Complexes as Effective Dna-Cleaving and Cytotoxic Agents(Wiley-v C H verlag Gmbh, 2008) Ozalp-Yaman, Seniz; de Hoog, Paul; Amadei, Giulio; Pitie, Marguerite; Gamez, Patrick; Dewelle, Janique; Reedijk, JanThe synthesis and biological activity of three heteronuclear platinum-copper complexes based on 3-Clip-Phen are reported. These rigid complexes have been designed to alter the intrinsic mechanism of action of both the platinum moiety and the Cu(3-Clip-Phen) unit. The platinum centers of two of these complexes are coordinated to a 3-Clip-Phen moiety, an ammine ligand and two chlorides, which are either cis or trans to each other. The third complex comprises two 3-Clip-Phen units and two chloride ligands bound in a trans fashion to the platinum ion. DNA-cleavage experiments show that the complexes are highly efficient nuclease agents. In addition, a markedly difference in their aptitude to perform direct double-strand cleavage is observed, which appears to be strongly related to the ability of the platinum unit to coordinate to DNA. Indeed, complex 6 is unable to coordinate to DNA, which is reflected by its incapability to carry out double-strand breaks. Nonetheless, this complex exhibits efficient DNA-cleavage activity, and its cytotoxicity is high for several cell lines. Complex 6 shows better antiproliferate activity than both cisplatin and Cu(3-Clip-Phen) toward most cancer cell lines. Furthermore, the cytotoxicity observed for 1 is for most cell lines close to that of cisplatin, or even better. Cu(3-Clip-Phen) induces very low cytotoxic effects, but a marked migratory activity. Complex 6 presents DNA-cleavage properties comparable to the one of Cu(3-Clip-Phen), but it does not show any migratory activity. Interestingly, both Cu(3-Clip-Phen) and 6 induces vacuolisation processes in the cell in contrast to complex 1 and cisplatin. Thus, the four complexes cisplatin tested, Cu(3-Clip-Phen), I and 6 stimulate different cellular responses.Article Citation - WoS: 7Citation - Scopus: 7Structural and Dielectric Properties of Ba1-x< Solid Solutions(Wiley-v C H verlag Gmbh, 2021) Qasrawi, A. F.; Sahin, Ethem Ilhan; Abed, Tamara Y.; Emek, MehribanHerein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.
