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Article Citation - WoS: 26Citation - Scopus: 26Photoelectronic, optical and electrical properties of TlInS2 single crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the donor energy levels located at 360, 280, 152 and 112 meV were detected. The photocurrent-illumination intensity dependence follows the law I-Ph proportional to F-gamma with gamma being 1.0 (linear), 0.5 (sublinear), 1.0 (linear) and 1.3 (supralinear) at low, moderate, high and very high illumination intensities indicating the monomolecular in the bulk, bimolecular and strong recombination at the surface, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature (T-m) 245 K. T is observed to shift to higher temperature as F increases, and disappears in the region where I-Ph-F dependence is supralinear. The phenomenon is attributed to the exchange in the behavior of the sensitizing and recombination centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.Article Citation - WoS: 28Citation - Scopus: 27Photoelectronic and Electrical Properties of Cuin5s8< Single Crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent-illumination intensity dependence (F) follows the law I(ph)alphaF(gamma), with gamma being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, tau(n), is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, tau(n) decrease with decreasing illumination intensity. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 30Citation - Scopus: 30Optoelectronic and Electrical Properties of Tlgas2 Single Crystal(Wiley-v C H verlag Gmbh, 2005) Qasrawi, AF; Gasanly, NMThe optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static refractive index of 2.50. The dark Hall coefficient measurements have shown that the crystals exhibit a conductivity type conversion from p-type to n-type at a critical temperature of 315 K. Deep donor and acceptor energy levels of 0.37/0.36 eV and 0.66 eV has been calculated from the temperature dependence of Hall coefficient and resistivity, and photocurrent measurements, respectively. The photocurrent decreases with decreasing temperature. The analysis of the photocurrent data have revealed that, the recombination mechanism is linear and supralinear above and below 290 K, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 16Citation - Scopus: 17Investigation of Localized Levels in Gas0.5se0.5< Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements(Wiley-v C H verlag Gmbh, 2002) Qasrawi, AF; Gasanly, NMTo identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal an additional donor level with activation energy of 0.40 eV indicating the extrinsic nature of conduction. The spectral distribution of photocurrent in the photon energy range of 0.65-5.9 eV reveals an indirect band gap of 2.26 eV. The photocurrent-illumination intensity dependence follows the law I-ph proportional to F-gamma, with gamma being 1.0, 0.65, and 0.5 at low, moderate and high illumination intensities, respectively. The corresponding behavior indicates the domination of monomolecular recombination, near equal densities of trapped and recombination centers and bimolecular recombination. It is observed that the photocurrent increases in the temperature range from 250 K up to T-m = 360 K and decreases for T > T-m. The temperature dependence of the photocurrent reveals two additional impurity levels with activation energies of 0.14 and 0.10 eV below and above Tm, respectively.Article Citation - WoS: 29Citation - Scopus: 28Optoelectronical Properties of Polycrystalline Β-Gase Thin Films(Wiley-v C H verlag Gmbh, 2006) Qasrawi, AF; Ahmad, MMSPolycrystalline beta-GaSe thin films were obtained by the thermal evaporation of GaSe crystals onto glass substrates kept at 300 degrees C under a pressure of 10(-5) Torr. The transmittance and reflectance of these films was measured in the incident photon energy range of 1.1-3.70 eV. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct allowed transitions band gap of 1.83 eV. The data analysis allowed the identification of the dispersive optical parameters by calculating the refractive index in the wavelength region of 620-1100 nm. In addition, the photocurrent of the samples was studied as function of incident illumination-intensity and temperature. The photocurrent is found to exhibit sublinear and supralinear character above and below 270 K, respectively. The temperature dependent photocurrent data analysis allowed the calculation of photocurrent activation energies as 603, 119 and 45 meV being dominant in the temperature regions of 250-300 K, 180-240 K and 80-160 K, respectively. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 4Citation - Scopus: 4Electrical, Optical and Photoconductive Properties of Poly(dibenzo-18(Wiley-v C H verlag Gmbh, 2004) Qasrawi, AF; Cihaner, A; Önal, AMTo investigate the energy levels, absorption bands, band gap, dominant transport mechanisms, recombination mechanisms and the free carrier life time behavior of poly-dibenzo-18-crown-6, poly-DB18C6, films, the dark electrical conductivity in the temperature range of 200-550 K, the absorbance and photocurrent spectra, the photocurrent -illumination intensity and time dependence at 300 K were studied. The dark electrical conductivity measurements revealed the existence of three energy levels located at 0.93, 0.32 and 0.76 eV below the tails of the conduction band. The main transport mechanism in the dark was found to be due to the thermal excitation of charge carriers and the variable range hopping above and below 260 K, respectively. The photocurrent and absorbance spectra reflect a band gap of 3.9 eV. The photocurrent -illumination intensity dependence reflects the sublinear, linear and supralinear characters indicating the decrease, remaining constant and increase in the free electron life time that in turn show the bimolecular, strong and very strong recombination characters at the surface under the application of low, moderate and high illumination intensity, respectively. A response time of 25.6 s was calculated from the decay Of I-ph-time dependence. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 27Citation - Scopus: 30Crystal Data, Electrical Resistivity, and Hall Mobility of N-Type Agin5s8< Single Crystals(Wiley-v C H verlag Gmbh, 2001) Qasrawi, AF; Gasanly, NMThe X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation - WoS: 45Citation - Scopus: 48Refractive Index, Band Gap and Oscillator Parameters of Amorphous Gase Thin Films(Wiley-v C H verlag Gmbh, 2005) Qasrawi, AF; Department of Electrical & Electronics EngineeringGaSe thin films are obtained by evaporating GaSe crystals onto ultrasonically cleaned glass substrates kept at room temperature under a pressure of similar to 10(-5) Torr. The X-ray analysis revealed that these films are of amorphous nature. The reflectance and transmittance of the films are measured in the incident photon energy range of 1.1-3.0 eV. The absorption coefficient spectral analysis revealed the existence of long and wide band tails of the localized states in the low absorption region. The band tails width is calculated to be 0.42 eV. The analysis of the absorption coefficient in the high absorption region revealed an indirect forbidden band gap of 1.93 eV. The transmittance analysis in the incidence photon wavelength range of 500-1100 nm allowed the determination of refractive index as function of wave length. The refractive index-wavelength variation leads to the determination of dispersion and oscillator energies as 31.23 and 3.90 eV, respectively. The static refractive index and static dielectric constant were also calculated as a result of the later data and found to be 9.0 and 3.0, respectively.Article Citation - WoS: 11Cd-Doping Effects on the Properties of Polycrystalline Α-in2se3< Thin Films(Wiley-v C H verlag Gmbh, 2002) Qasrawi, AFThe X-ray diffraction has revealed that the polycrystalline hexagonal structured alpha-In2Se3 thin films grown at substrate temperature of 200degreesC with the unit cell parameters a=4.03degreesA and c=19.23degreesA becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00degreesA and c=16.63degreesA by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (I-ph) increases with increasing illumination intensity (T) and decreasing temperature up to a maximum temperature of similar to100 K, below which I-ph is temperature invariant. It is found to have the monomolecular and bimolccular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of I-ph on F at low illumination intensities.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Carrier Scattering Mechanisms in Tiins2 Single Crystals by Hall Effect Measurements(Wiley-v C H verlag Gmbh, 2004) Qasrawi, AF; Gasanly, NMTlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole-electron pair effective masses of 0.24 in,, 0.14 m(o) and 0.09 m(o) and hole- and electron-phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (C) 2004 WILEY-VCH Verlag Gmbh & Co. KGaA, Weinheim.
