Crystal data, electrical resistivity, and Hall mobility of n-type AgIn<sub>5</sub>S<sub>8</sub> single crystals
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Date
2001
Journal Title
Journal ISSN
Volume Title
Publisher
Wiley-v C H verlag Gmbh
Abstract
The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
Description
Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686
Keywords
AgIn5S8 crystal, resistivity, mobility, acoustic, polar, scattering mechanism
Turkish CoHE Thesis Center URL
Citation
25
WoS Q
Q3
Scopus Q
Source
Volume
36
Issue
4-5
Start Page
457
End Page
464