Crystal data, electrical resistivity, and Hall mobility of n-type AgIn<sub>5</sub>S<sub>8</sub> single crystals

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2001

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Wiley-v C H verlag Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.

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Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686
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Qasrawi, Atef Fayez ORCID logo
Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo

Keywords

AgIn5S8 crystal, resistivity, mobility, acoustic, polar, scattering mechanism

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25

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Q3

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Volume

36

Issue

4-5

Start Page

457

End Page

464

URI

https://doi.org/10.1002/1521-4079(200106)36:4/5<457
 https://hdl.handle.net/20.500.14411/1131

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