Crystal data, electrical resistivity, and Hall mobility of n-type AgIn<sub>5</sub>S<sub>8</sub> single crystals

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dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawi, AF
dc.contributor.authorGasanly, NM
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:08:59Z
dc.date.available2024-07-05T15:08:59Z
dc.date.issued2001
dc.departmentAtılım Universityen_US
dc.department-tempAtilim Univ, Fac Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionQasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.en_US
dc.identifier.citation25
dc.identifier.doi10.1002/1521-4079(200106)36:4/5<457
dc.identifier.endpage464en_US
dc.identifier.issn0232-1300
dc.identifier.issue4-5en_US
dc.identifier.scopus2-s2.0-0034941499
dc.identifier.startpage457en_US
dc.identifier.urihttps://doi.org/10.1002/1521-4079(200106)36:4/5<457
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1131
dc.identifier.volume36en_US
dc.identifier.wosWOS:000169608200013
dc.identifier.wosqualityQ3
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherWiley-v C H verlag Gmbhen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAgIn5S8 crystalen_US
dc.subjectresistivityen_US
dc.subjectmobilityen_US
dc.subjectacousticen_US
dc.subjectpolaren_US
dc.subjectscattering mechanismen_US
dc.titleCrystal data, electrical resistivity, and Hall mobility of n-type AgIn<sub>5</sub>S<sub>8</sub> single crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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