Crystal Data, Electrical Resistivity, and Hall Mobility of N-Type Agin<sub>5</Sub>s<sub>8< Single Crystals
| dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorscopusid | 6603962677 | |
| dc.authorscopusid | 35580905900 | |
| dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
| dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
| dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
| dc.contributor.author | Qasrawi, AF | |
| dc.contributor.author | Gasanly, NM | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.date.accessioned | 2024-07-05T15:08:59Z | |
| dc.date.available | 2024-07-05T15:08:59Z | |
| dc.date.issued | 2001 | |
| dc.department | Atılım University | en_US |
| dc.department-temp | Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
| dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
| dc.description.abstract | The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities. | en_US |
| dc.identifier.citationcount | 25 | |
| dc.identifier.doi | 10.1002/1521-4079(200106)36:4/5<457 | |
| dc.identifier.endpage | 464 | en_US |
| dc.identifier.issn | 0232-1300 | |
| dc.identifier.issue | 4-5 | en_US |
| dc.identifier.scopus | 2-s2.0-0034941499 | |
| dc.identifier.startpage | 457 | en_US |
| dc.identifier.uri | https://doi.org/10.1002/1521-4079(200106)36:4/5<457 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/1131 | |
| dc.identifier.volume | 36 | en_US |
| dc.identifier.wos | WOS:000169608200013 | |
| dc.identifier.wosquality | Q3 | |
| dc.institutionauthor | Qasrawı, Atef Fayez Hasan | |
| dc.language.iso | en | en_US |
| dc.publisher | Wiley-v C H verlag Gmbh | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.scopus.citedbyCount | 28 | |
| dc.subject | AgIn5S8 crystal | en_US |
| dc.subject | resistivity | en_US |
| dc.subject | mobility | en_US |
| dc.subject | acoustic | en_US |
| dc.subject | polar | en_US |
| dc.subject | scattering mechanism | en_US |
| dc.title | Crystal Data, Electrical Resistivity, and Hall Mobility of N-Type Agin<sub>5</Sub>s<sub>8< Single Crystals | en_US |
| dc.type | Article | en_US |
| dc.wos.citedbyCount | 25 | |
| dspace.entity.type | Publication | |
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