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Article Citation - WoS: 4Citation - Scopus: 5Thermoluminescence Properties of Tl2ga2< Layered Single Crystals(Amer inst Physics, 2013) Delice, S.; Isik, M.; Bulur, E.; Gasanly, N. M.The trap center(s) in Tl2Ga2S3Se single crystals has been investigated from thermoluminescence (TL) measurements in the temperature range of 10-300 K. Curve fitting, initial rise, and peak shape methods were applied to observed TL glow curve to evaluate the activation energy, capture cross section, and attempt-to-escape frequency of the trap center. One trapping center has been revealed with activation energy of 16 meV. Moreover, the characteristics of trap distribution have been studied using an experimental technique based on different illumination temperature. An increase of activation energy from 16 to 58 meV was revealed for the applied illumination temperature range of 10-25K. (C) 2013 AIP Publishing LLC.Article Citation - WoS: 11Citation - Scopus: 12Structural and Temperature-Tuned Bandgap Characteristics of Thermally Evaporated β-in2< Thin Films(Springer, 2021) Surucu, O.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Parlak, M.In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.Article Citation - WoS: 6Citation - Scopus: 5The Effect of Zn Concentration on the Structural and Optical Properties of Cd1-xznx< Nanostructured Thin Films(Springer, 2021) Isik, M.; Terlemezoglu, M.; Isik, S.; Erturk, K.; Gasanly, N. M.The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of diffraction peaks related to cubic crystal lattice. The atomic compositional ratios were determined by performing energy dispersive spectroscopy measurements. Scanning electron microscopy images indicated that deposited thin films have nanostructured forms. Raman spectra of the Cd1-xZnxS thin films exhibited two vibrational modes associated with longitudinal optical mode and its first overtone. Transmission measurements were performed on the deposited thin films to get their band gap energies. It was seen from the analyses of absorption coefficient that band gap energy of Cd1-xZnxS thin films increases almost linearly from 2.40 to 2.51 eV as the composition was increased from x = 0 to x = 0.09.Article Citation - WoS: 1Citation - Scopus: 3Optical constants and critical point energies of (AgInSe2)0.75-(In2Se3)0.25 single crystals(Springer, 2020) Isik, M.; Nasser, H.; Guseinov, A.; Gasanly, N. M.AgInSe2 and In2Se3 are two attractive semiconducting materials for various technological applications especially for photovoltaic applications. In the present study, structural and optical properties of (AgInSe2)(x)-(In2Se3)(1-x) crystals for composition of x = 0.75 corresponding to chemical formula of Ag3In5Se9 were characterized by X-ray diffraction, energy-dispersive spectroscopy, room temperature transmission, and ellipsometry experiments. The transmittance spectrum was analyzed to reveal energy band gap. The derivative spectrophotometry analysis resulted in band gap energy of 1.22 eV. The spectra of complex dielectric function, refractive index and extinction coefficient were presented between 1.6 and 6.2 eV from the outcomes of ellipsometry analyses. Critical point energies have been determined using the derivative analyses of dielectric function. Five critical points at 2.70, 3.30, 4.05, 4.73, and 5.42 eV were revealed from the analyses. Crystal structure and atomic composition in semiconducting compound were also reported in the present work. The obtained results were compared with those reported for constituent compounds.Article Citation - WoS: 14Citation - Scopus: 15Structural and Optical Properties of Ga2se3< Crystals by Spectroscopic Ellipsometry(Springer, 2019) Guler, I.; Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.Article Citation - WoS: 23Citation - Scopus: 23Exploring Temperature-Dependent Bandgap and Urbach Energies in Cdte Thin Films for Optoelectronic Applications(Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.Article Citation - WoS: 3Citation - Scopus: 4Analysis of Temperature-Dependent Transmittance Spectra of Zn0.5in0.5< (zis) Thin Films(Springer, 2019) Isik, M.; Gullu, H. H.; Delice, S.; Gasanly, N. M.; Parlak, M.Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550-950nm and in temperature range of 10-300K. Transmission spectra shifted towards higher wavelengths (lower energies) with increasing temperature. Transmission data were analyzed using Tauc relation and derivative spectroscopy. Analysis with Tauc relation was resulted in three different energy levels for the room temperature band gap values of material as 1.594, 1.735 and 1.830eV. The spectrum of first wavelength derivative of transmittance exhibited two maxima positions at 1.632 and 1.814eV and one minima around 1.741eV. The determined energies from both methods were in good agreement with each other. The presence of three band gap energy levels were associated to valence band splitting due to crystal-field and spin-orbit splitting. Temperature dependence of the band gap energies were also analyzed using Varshni relation and gap energy value at absolute zero and the rate of change of gap energy with temperature were determined.Article Citation - WoS: 1Citation - Scopus: 1Shallow Trapping Centers in Bi12geo20 Single Crystals by Thermally Stimulated Current Measurements(Elsevier, 2022) Delice, S.; Isik, M.; Gasanly, N. M.Bi12GeO20 single crystals were investigated by thermally stimulated current (TSC) experiments performed in the temperature range of 10-290 K. Recorded TSC glow curve exhibited six distinctive peaks with maxima at around 90, 105, 166, 209, 246, 275 K. The analyses of the obtained glow curve were accomplished by curve fitting and initial rise methods. The analysis results were in good agreement that the TSC peaks appeared in the glow curve due to existence of trapping levels with activation energies of 0.10, 0.18, 0.23, 0.53, 0.68 and 0.73 eV. These trapping levels were estimated to be hole traps above valence band. The heating rate dependent TSC glow curves were also obtained for various rates between 0.30 and 0.45 K/s. The changes of TSC intensity, peak maximum temperature and full-widths-half-maximum values with heating rates were studied in detail. TSC intensity decreased and peak maximum temperature increased with increasing heating rate. Determination of defects and trapping/stimulation mechanism of those are significant for technological applications since local states in these materials take critical role for device performance.Article Citation - WoS: 7Citation - Scopus: 7Characterization of Bi12sio20< Single Crystal: Understanding Structural and Thermal Properties(Springer Heidelberg, 2024) Altuntas, G.; Isik, M.; Gasanly, N. M.This study presents a thorough examination of the structural and thermal characteristics of Bi12SiO20 crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 degrees C, followed by weight loss processes occurring in the temperature ranges of 750-919 degrees C and above 919 degrees C. The 2% weight loss in the range of 750-919 degrees C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919 C-o and was associated with the decomposition of the Bi12SiO20 compound and/or the melting processes of the components of the Bi12SiO20 compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 degrees C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal's structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields.Article Citation - WoS: 4Citation - Scopus: 4Optical Characterization of (tlins2)0.5< Crystal by Ellipsometry: Linear and Optical Constants for Optoelectronic Devices(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.TlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.
