Thermoluminescence properties of Tl<sub>2</sub>Ga<sub>2</sub>S<sub>3</sub>Se layered single crystals

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2013

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Amer inst Physics

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The trap center(s) in Tl2Ga2S3Se single crystals has been investigated from thermoluminescence (TL) measurements in the temperature range of 10-300 K. Curve fitting, initial rise, and peak shape methods were applied to observed TL glow curve to evaluate the activation energy, capture cross section, and attempt-to-escape frequency of the trap center. One trapping center has been revealed with activation energy of 16 meV. Moreover, the characteristics of trap distribution have been studied using an experimental technique based on different illumination temperature. An increase of activation energy from 16 to 58 meV was revealed for the applied illumination temperature range of 10-25K. (C) 2013 AIP Publishing LLC.

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Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Bulur, Enver/0000-0002-4000-7966

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4

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113

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19

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https://doi.org/10.1063/1.4807165
 https://hdl.handle.net/20.500.14411/443

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