GCRIS :: Search

Search Results

Now showing 1 - 10 of 24

Citation - WoS: 22
Citation - Scopus: 22
Wavelength Dependence of the Nonlinear Absorption Performance and Optical Limiting in Bi12tio20 Single Crystal
(Elsevier, 2023) Pepe, Yasemin; Isik, Mehmet; Karatay, Ahmet; Gasanly, Nizami; Elmali, Ayhan
In this study, the influence of excitation wavelength and input intensity on the nonlinear absorption (NA) mechanism and optical limiting behavior of the Bi12TiO20 (BTO) single crystal were reported. The energy band gap of the BTO single crystal was obtained to be 2.38 eV. Urbach energy revealed that the single crystal has a highly defective structure. Open aperture (OA) Z-scan experiments were conducted at 532 and 1064 nm exci-tation wavelengths at various input intensities. Obtained experimental data were analyzed with a theoretical model considering one photon, two-photon and free carrier absorption contributions to NA. The obtained results revealed that the BTO single crystal possesses NA. The NA coefficient increased with increasing input intensity at 532 nm excitation wavelength, while it decreased with increasing input intensity at 1064 nm excitation wave-length. Due to the intense localized defect states distribution at the energy of 532 nm excitation wavelength within the band gap, increasing contribution to NA came from one photon absorption (OPA), sequential two -photon absorption (TPA) and free carrier absorption (FCA) with increasing input intensity. The filling of the defect states at 1064 excitation wavelength caused a reduction in NA due to increasing saturable absorption with increasing input intensity. TPA coefficients were also found from the fitting ignoring the defect states. As ex-pected, the values of the nonlinear absorption coefficient beta eff are higher than that of the TPA coefficients for both excitation wavelengths. The optical limiting threshold of the BTO single crystal was obtained to be 6.62 mJ/cm2. The results of the present works indicated that BTO single crystal can be used as a potential optical limiter.
Citation - WoS: 8
Citation - Scopus: 9
Experimental and Theoretical Investigation of the Mechanical Characteristics of Sillenite Compound: Bi₁₂geo_20<
(Elsevier Science Sa, 2021) Surucu, Gokhan; Isik, Mehmet; Gencer, Aysenur; Gasanly, Nizami
The present study reports the mechanical and elastic characteristics of Bi12GeO20 (BGO) compound by experimental nanoindentation measurements and density functional theory (DFT) calculations. X-ray diffraction pattern of BGO was plotted and revealed diffraction peaks were associated with Miller indices of cubic crystalline structure with lattice constant of a = 10.304 angstrom. Two- and three-dimensional representations of Young's modulus, linear compressibility, shear modulus and Poisson's ratio were presented according to DFT calculations. The calculated elastic constants pointed out the mechanically stable and anisotropic behavior of the BGO. The hardness and Young's modulus ranges of the BGO calculated from DFT studies were found as 3.7-6.3 GPa and 61.7-98.9 GPa, respectively. Hardness and Young's modulus of BGO single crystal were also obtained by analyzing force-dependent nanoindentation experimental data. It was observed that hardness and Young's modulus decrease with increase of load in the low applied loads and then reaches saturation in the high applied loads. This behavior is known as indentation size effect. True hardness value was determined from proportional specimen resistance model as 4.1 GPa. The force independent region presented the Young's modulus as 114 GPa. (C) 2021 Elsevier B.V. All rights reserved.
Citation - WoS: 1
Citation - Scopus: 1
Structural and Optical Properties of Thermally Evaporated Ga-In Thin Films
(World Scientific Publ Co Pte Ltd, 2014) Isik, Mehmet; Gullu, Hasan Huseyin
In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition of the films were almost same. Optical properties of the films were studied by transmission measurements in the wavelength range of 320-1100 nm. The direct bandgap transitions with energies in the range of 1.52 eV and 1.65 eV were revealed for the investigated GIS films. Photon energy dependence of absorption coefficient showed that there exist three distinct transition regions for films annealed at 400 degrees C and 500 degrees C. The quasicubic model was applied for these transitions to calculate crystal-field splitting and spin-orbit splitting energy values.
Citation - WoS: 2
Citation - Scopus: 2
Analysis of Optical Constants and Temperature-Dependent Absorption Edge of Gas_0.75se_{0.25< Layered Crystals}
(Pergamon-elsevier Science Ltd, 2017) Isik, Mehmet; Gasanly, Nizami
GaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measurements in the wavelength range of 450-1000 nm. Derivative spectrophotometry analyses on temperature dependent transmittance spectra showed that band gap energies of the crystal increase from 239 eV (T=300 K) to 2.53 eV (T=10 K). Band gap at zero temperature, average phonon energy, electron phonon coupling parameter and rates of change of band gap energy with temperature were found from the temperature dependences of band gap energies under the light of different models reported in literature. Furthermore, the dispersion of room temperature refractive index was discussed in terms of single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, zero-frequency refractive index, were determined as a result of analyses. (C) 2017 Elsevier Ltd. All rights reserved.
Citation - WoS: 2
Citation - Scopus: 2
Temperature-Tuned Band Gap Energy and Oscillator Parameters of Gas_0.5se_{0.5< Single Crystals}
(Elsevier Gmbh, Urban & Fischer verlag, 2016) Isik, Mehmet; Tugay, Evrin; Gasanly, Nizami
Temperature-dependent transmission and room temperature reflection measurements were carried out on GaS0.5Se0.5 single crystal in the wavelength range of 380-1000 nm to investigate its optical parameters. The analysis of the temperature-dependent absorption data showed that direct and indirect band gap energies increase from 2.36 to 2.50 eV and 2.27 to 2.40 eV, respectively, as temperature is decreased from 300 to 10 K. The rates of change of the direct and indirect band gap energies with temperature was found around -7.4 x 10(-4) eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the band gap energies were also found from the same analysis as 2.50 eV (for direct) and 2.40 eV (for indirect). Wemple-DiDomenico single effective oscillator model, Sellmeier oscillator model and Spitzer-Fan model were used for the room temperature reflection data to find optical parameters of the crystal. (C) 2016 Elsevier GmbH. All rights reserved.
Citation - WoS: 4
Citation - Scopus: 3
Exploring the Thermal Stability of Sb2se3 for Potential Applications Through Advanced Thermal Analysis Methods
(Amer Chemical Soc, 2025) Altuntas, Gozde; Isik, Mehmet; Surucu, Gokhan; Parlak, Mehmet; Surucu, Ozge
Antimony selenide (Sb2Se3) is a promising material for energy applications, including photovoltaics, thermoelectrics, and photodetectors, due to its favorable electronic properties, availability, and low toxicity. However, its thermal stability, crucial for device efficiency and reliability, has been less explored, leaving a gap in understanding its high-temperature suitability. This study evaluates the thermal stability of Sb2Se3 using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The results show that Sb2Se3 remains stable up to 500 degrees C, with two significant weight loss stages: 1.75% between 500 and 610 degrees C, and 3.50% between 610 and 775 degrees C, indicating decomposition processes. Activation energies for the decomposition phases were determined as 121.8 and 57.2 kJ/mol using the Coats-Redfern method. Additionally, an endothermic phase transition was observed between 599 and 630.6 degrees C via DSC analysis. These findings demonstrate Sb2Se3's potential for high-temperature energy applications, providing essential insights for optimizing its use in solar cells, thermoelectric devices, and other technologies.
Citation - WoS: 8
Citation - Scopus: 9
Temperature-Dependent Optical Properties of Tio₂ Nanoparticles: a Study of Band Gap Evolution
(Springer, 2023) Isik, Mehmet; Delice, Serdar; Gasanly, Nizami
In this study, we present the first comprehensive investigation of the temperature-dependent band gap energy of anatase TiO2 nanoparticles, utilizing transmission measurements in the range of 10-300 K. X-ray diffraction pattern exhibited nine peaks related to tetragonal crystal structure. Scanning electron microscope image showed that the nanoparticles with the dimensions of 25-50 nm were found as micrometer sized agglomerated. When the spectrum obtained as a result of the transmission measurements was analyzed, it was seen that the band gap energy decreased from 3.29(5) to 3.26(6) eV as the temperature was increased from 10 to 300 K. Temperature-band gap dependence was analyzed using Varshni and O'Donnell-Chen optical models and optical parameters of the TiO2 nanoparticles like absolute zero band gap energy, rate of change of band gap with temperature and average phonon energy were reported.
Citation - WoS: 10
Citation - Scopus: 10
Ellipsometric Study of Optical Properties of Gas_xse_{1-x< Layered Mixed Crystals}
(Elsevier Science Bv, 2016) Isik, Mehmet; Gasanly, Nizami
Spectroscopic ellipsometry measurements were performed on GaSxSe1-x mixed crystals (0 <= x <= 1) in the 1.2-6.2 eV range. Spectral dependence of optical parameters; real and imaginary components of pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were reported in the present work. Critical point (CP) analyses on second-energy derivative spectra of the pseudodielectric function were accomplished to find the interband transition energies. The revealed energy values were associated with each other taking into account the fact that band gap energy of mixed crystals rises with increase in sulfur content. The variation of CP energies with composition (x) was also plotted. Peaks in the spectra of studied optical parameters and CP energy values were observed to be shifted to higher energy values as sulfur concentration is increased in the mixed crystals. (C) 2016 Elsevier B.V. All rights reserved.
Citation - WoS: 5
Citation - Scopus: 5
Optical Characterization of Cuin₅s_{8< Crystals by Ellipsometry Measurements}
(Pergamon-elsevier Science Ltd, 2016) Isik, Mehmet; Gasanly, Nizami
Optical properties of CuIn5S8 crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2-6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct band gap transitions with energy 1.53 eV. Wemple-DiDomenico and Spitzer-Fan models were used to find the oscillator energy, dispersion energy, zero-frequency refractive index and high-frequency dielectric constant values. Structural properties of the CuIn5S8 crystals were investigated using X-ray diffraction and energy dispersive spectroscopy analysis. (C) 2015 Elsevier Ltd. All rights reserved.
Citation - WoS: 7
Citation - Scopus: 7
Optical Properties of Gas Crystals: Combined Study of Temperature-Dependent Band Gap Energy and Oscillator Parameters
(Natl inst Science Communication-niscair, 2017) Isik, Mehmet; Tugay, Evrin; Gasanly, Nizami; Department of Electrical & Electronics Engineering
Optical parameters of gallium sulfide (GaS) layered single crystals have been found through temperature-dependent transmission and room temperature reflection experiments in the wavelength range of 400-1100 nm. Experimental data demonstrates the coexistence of both optical indirect and direct transitions and the shift of the absorption edges toward lower energies by increasing temperature in the range of 10-300 K. Band gap at zero temperature, average phonon energy and electron phonon coupling parameter for indirect and direct band gap energies have been obtained from the analyses of temperature dependences of band gap energies. At high temperatures kT>> (E-ph), rates of band gap energy change have been found as 0.56 and 0.67 me V/K for E-gi and E-gd, respectively. Furthermore, the dispersion of refractive index has been discussed in terms of the Wemple-DiDomenico single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, oscillator strength and zero-frequency refractive index, have been found to be 4.48 eV, 24.8 eV, 6.99x10(13) m(-2) and 2.56, respectively. The results of the present work will provide an important contribution to the research areas related to the characterization and optoelectronic device fabrication using GaS layered crystals.

Filters

Settings

Sort By

Results per page

Search Results