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Article Citation - WoS: 2Citation - Scopus: 2Performance of Ge-Sandwiched Gase Layers(Springer, 2018) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Abdallah, Maisam M. A.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringIn the current work, we report the effect of sandwiching Ge between two stacked layers of GaSe. The GaSe and Ge-sandwiched GaSe were subjected to x-ray diffraction, optical spectrophotometry and impedance spectroscopy measurement and analysis. The presence of a Ge layer between two layers of GaSe was observed to cause uniform deformation and increase the absorption of light by GaSe. The response of the dielectric constant to incident light was also significantly enhanced by Ge sandwiching. In addition, Drude-Lorentz modeling of the imaginary part of the dielectric constant revealed that the layer of Ge layer between GaSe layers increased the drift mobility from 30.76 cm(2)/Vs to 52.49 cm(2)/Vs. It also enhanced the plasmon frequency without altering the free carrier density. Moreover, Ge improved the band filtering features of GaSe. In particular, it enhanced the sensitivity of the impedance response to the incident signal and increased the return loss factor of GaSe when it was used as a high band pass filter.Article Citation - WoS: 2Citation - Scopus: 3Electrical Characterization of Zninse2 Thin-Film Heterojunction(Springer, 2019) Gullu, H. H.; Parlak, M.ZnInSe2/Cu0.5Ag0.5InSe2 diode structures have been fabricated by thermal evaporation of stacked layers on indium tin oxide-coated glass substrates. Temperature-dependent dark current-voltage measurements were carried out to extract the diode parameters and to determine the dominant conduction mechanisms in the forward- and reverse-bias regions. The heterostructure showed three order of magnitude rectifying behavior with a barrier height of 0.72 eV and ideality factor of 2.16 at room temperature. In the high forward-bias region, the series and shunt resistances were calculated with the help of parasitic resistance relations, yielding room-temperature values of 9.54 x 10(2) Omega cm(2) and 1.23 x 10(3) Omega cm(2), respectively. According to the analysis of the current flow in the forward-bias region, abnormal thermionic emission due to the variation of the ideality factor with temperature and space-charge-limited current processes were determined to be the dominant conduction mechanisms in this heterostructure. In the reverse-bias region, the tunneling mechanism was found to be effective in the leakage current flow with trap density of 10(6) cm(-3). Spectral photocurrent measurements were carried out to investigate the spectral working range of the device structure. The main photocurrent peaks observed in the spectrum corresponded to the band-edge values of the active thin-film layers.Article Citation - WoS: 11Citation - Scopus: 12Structural and Temperature-Tuned Bandgap Characteristics of Thermally Evaporated β-in2< Thin Films(Springer, 2021) Surucu, O.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Parlak, M.In2S3 is one of the attractive compounds taking remarkable interest in optoelectronic device applications. The present study reports the structural and optical characteristics of thermally evaporated beta-In2S3 thin films. The crystalline structure of the thin films was found as cubic taking into account the observed diffraction peaks in the X-ray diffraction pattern. The atomic compositional ratio of constituent elements was obtained as consistent with chemical formula of In2S3. Three peaks around 275, 309 and 369 cm(-1) were observed in the Raman spectrum. Temperature-tuned bandgap energy characteristics of the In2S3 thin films were revealed from the investigation of transmittance spectra obtained at various temperatures between 10 and 300 K. The analyses of the transmittance spectra indicated that direct bandgap energy of the In2S3 thin films decreases from 2.40 eV (at 10 K) to 2.37 eV (at 300 K) with the increase of measurement temperature. The bandgap energy vs. temperature relation was investigated by means of Varshni optical model. The fitting of the experimental data under the light of theoretical expression revealed the absolute zero bandgap energy, the rate of change of bandgap energy and Debye temperature.Article Citation - WoS: 1Citation - Scopus: 2Controlling Heterogeneous Structure of Smooth Breaks in Panel Unit Root and Cointegration Testing(Springer, 2023) Omay, Tolga; Iren, PerihanThis study aims to show the consequences of a restrictive homogeneity assumption of frequency in heterogeneous panel unit root and cointegration testing with Flexible Fourier Form. For this purpose, we use a simple panel unit root and residual based cointegration test with Flexible Fourier Form in a heterogeneous frequency setting using a bootstrap algorithm. The power of the test statistics and empirical analysis results indicate that failing to take into account a heterogeneous frequency may lead to misleading inferences, thereby leading to misspecified tests and erroneous conclusions concerning the stochastic behavior of the data in the panel sample.Article Citation - WoS: 6Citation - Scopus: 5The Effect of Zn Concentration on the Structural and Optical Properties of Cd1-xznx< Nanostructured Thin Films(Springer, 2021) Isik, M.; Terlemezoglu, M.; Isik, S.; Erturk, K.; Gasanly, N. M.The structural and optical properties of electrodeposited Cd1-xZnxS nanostructured thin films were investigated in the present paper for compositions of x = 0, 0.03, 0.06 and 0.09. X-ray diffraction patterns of the deposited thin films consisted of diffraction peaks related to cubic crystal lattice. The atomic compositional ratios were determined by performing energy dispersive spectroscopy measurements. Scanning electron microscopy images indicated that deposited thin films have nanostructured forms. Raman spectra of the Cd1-xZnxS thin films exhibited two vibrational modes associated with longitudinal optical mode and its first overtone. Transmission measurements were performed on the deposited thin films to get their band gap energies. It was seen from the analyses of absorption coefficient that band gap energy of Cd1-xZnxS thin films increases almost linearly from 2.40 to 2.51 eV as the composition was increased from x = 0 to x = 0.09.Article Citation - WoS: 42Citation - Scopus: 41Analysis of Forward and Reverse Biased Current-Voltage Characteristics of Al/Al2< Schottky Diode With Atomic Layer Deposited Al2o3< Thin Film Interlayer(Springer, 2019) Gullu, H. H.; Yildiz, D. E.The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias regions, the temperature-dependent I-Vcharacteristics are detailed in terms of diode parameters and dominant conduction mechanisms. Due to the existence of Al2O3 film layer and series resistance in the diode structure, current flow under the forward bias is observed in a deviation from pure exponential characteristics. The diode parameters are estimated from thermionic emission model with non-unity ideality factor, and this non-ideal behavior is resulted in the ideality factors greater than two. In addition to these values, zero-bias barrier height is found to be strongly temperature dependent, and this variation indicates a presence of inhomogeneties in the barrier according to Gaussian distribution (GD) approximation. This fact is investigated plotting characteristic plot of this model and by extracting mean barrier height with its standard deviation. In order to complete the work on the forward I-V region, the carrier transport characteristics of the diode are explained on the basis of thermionic emission mechanism with a GD of the harrier heights. In accordance with this approximation, the conventional Richardson plot exhibits non-linearity behavior and modified current relation based on GD model is used to calculate mean barrier height and Richardson constant. In addition, the values of parasitic resistances are determined using Ohm's law as a function of temperature for all bias voltage spectra. In the reverse bias region, Poole-Frenkel effect is found to be dominant on the conduction associated with the barrier lowering, and barrier height in the emission process from the trapped states, and high-frequency dielectric constant of Al2O3 film layer is calculated.Article Citation - WoS: 5Citation - Scopus: 3Investigation of Λ (1405)as a molecular pentaquark state(Springer, 2024) Azizi, K.; Sarac, Y.; Sundu, H.Lambda ( 1405 ) is one of the interesting particles with its unclear structure and distinct properties. It has a light mass compared to its non-strange counterpart, despite the strange quark it carries. This situation puts the investigation of this resonance among the hot topics in hadron physics and collects attention to clarify its properties. In this study, we focus on the calculation of the mass and residue of the Lambda ( 1405 ) resonance within the framework of QCD sum rules. We assign a structure in the form of a molecular pentaquark composed from admixture of K - meson-neutron. Using an interpolating current in this form, the masses and the current coupling constant are attained as m = 1406 +/- 128 MeV and lambda = ( 3.35 +/- 0.35 ) x 10( - 5) GeV 6 for q and m = 1402 +/- 141 MeV and lambda = ( 4.08 +/- 1.08 ) x 10( - 5) GeV 6 for I Lorentz structures entering the calculations, respectively. The obtained mass values agree well with the experimental data supporting the plausibility of the considered structure.Article Citation - WoS: 3Citation - Scopus: 4Analysis of Temperature-Dependent Transmittance Spectra of Zn0.5in0.5< (zis) Thin Films(Springer, 2019) Isik, M.; Gullu, H. H.; Delice, S.; Gasanly, N. M.; Parlak, M.Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550-950nm and in temperature range of 10-300K. Transmission spectra shifted towards higher wavelengths (lower energies) with increasing temperature. Transmission data were analyzed using Tauc relation and derivative spectroscopy. Analysis with Tauc relation was resulted in three different energy levels for the room temperature band gap values of material as 1.594, 1.735 and 1.830eV. The spectrum of first wavelength derivative of transmittance exhibited two maxima positions at 1.632 and 1.814eV and one minima around 1.741eV. The determined energies from both methods were in good agreement with each other. The presence of three band gap energy levels were associated to valence band splitting due to crystal-field and spin-orbit splitting. Temperature dependence of the band gap energies were also analyzed using Varshni relation and gap energy value at absolute zero and the rate of change of gap energy with temperature were determined.Article Entropy Based Streaming Big-Data Reduction With Adjustable Compression Ratio(Springer, 2023) Gokcay, ErhanThe Internet of Things is a novel concept in which numerous physical devices are linked to the internet to collect, generate, and distribute data for processing. Data storage and processing become more challenging as the number of devices increases. One solution to the problem is to reduce the amount of stored data in such a way that processing accuracy does not suffer significantly. The reduction can be lossy or lossless, depending on the type of data. The article presents a novel lossy algorithm for reducing the amount of data stored in the system. The reduction process aims to reduce the volume of data while maintaining classification accuracy and properly adjusting the reduction ratio. A nonlinear cluster distance measure is used to create subgroups so that samples can be assigned to the correct clusters even though the cluster shape is nonlinear. Each sample is assumed to arrive one at a time during the reduction. As a result of this approach, the algorithm is suitable for streaming data. The user can adjust the degree of reduction, and the reduction algorithm strives to minimize classification error. The algorithm is not dependent on any particular classification technique. Subclusters are formed and readjusted after each sample during the calculation. To summarize the data from the subclusters, representative points are calculated. The data summary that is created can be saved and used for future processing. The accuracy difference between regular and reduced datasets is used to measure the effectiveness of the proposed method. Different classifiers are used to measure the accuracy difference. The results show that the nonlinear information-theoretic cluster distance measure improves the reduction rates with higher accuracy values compared to existing studies. At the same time, the reduction rate can be adjusted as desired, which is a lacking feature in the current methods. The characteristics are discussed, and the results are compared to previously published algorithms.Article Citation - WoS: 2Citation - Scopus: 2Optimal Limit Order Book Trading Strategies With Stochastic Volatility in the Underlying Asset(Springer, 2023) Aydogan, Burcu; Ugur, Omur; Aksoy, UmitIn quantitative finance, there have been numerous new aspects and developments related with the stochastic control and optimization problems which handle the controlled variables of performing the behavior of a dynamical system to achieve certain objectives. In this paper, we address the optimal trading strategies via price impact models using Heston stochastic volatility framework including jump processes either in price or in volatility of the price dynamics with the aim of maximizing expected return of the trader by controlling the inventories. Two types of utility functions are considered: quadratic and exponential. In both cases, the remaining inventories of the market maker are charged with a liquidation cost. In order to achieve the optimal quotes, we control the inventory risk and follow the influence of each parameter in the model to the best bid and ask prices. We show that the risk metrics including profit and loss distribution (PnL), standard deviation and Sharpe ratio play important roles for the trader to make decisions on the strategies. We apply finite differences and linear interpolation as well as extrapolation techniques to obtain a solution of the nonlinear Hamilton-Jacobi-Bellman (HJB) equation. Moreover, we consider different cases on the modeling to carry out the numerical simulations.
