Structural and Optical Properties of Ga<sub>2</Sub>se<sub>3< Crystals by Spectroscopic Ellipsometry
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Date
2019
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Springer
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Abstract
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Description
Gasanly, Nizami/0000-0002-3199-6686; Babayeva, Rena Fikret/0000-0002-3170-0689; Gasanly, Nizami/0000-0002-3199-6686
Keywords
Semiconductors, optical properties, optical constants, critical points
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Q3
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Volume
48
Issue
4
Start Page
2418
End Page
2422