Analysis of the Structural and Optical Characteristics of Znse Thin Films as Interface Layer

Abstract

This research reveals the results of a comprehensive analysis of the optical and structural features of zinc selenide (ZnSe) thin film. The studied film was synthesized using the thermal evaporation method after preparation on the glass substrate. The film's structural characteristics, which have been determined by using scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and X-ray diffraction (XRD), confirm the polycrystalline nature of the films with a predominant cubic zinc-blende structure. The surface morphology investigated through SEM reveals a uniform grain distribution with minimal surface defects, indicating high-quality film formation. In order to examine the optical characteristics, the ultraviolet-visible spectroscopy method is used in a spectral range between 300 and 900 nm. In this way, the ultraviolet-visible spectroscopy data are utilized to obtain optical features such as extinction coefficient (k), optical band gap (Eg), refractive index (n), absorption coefficient (alpha), and optical conductivity (sigma opt). These optical properties are assessed using ultraviolet-visible spectroscopy, revealing a direct band gap of approximately 2.88 eV, which is consistent with the bulk properties of ZnSe and suitable for optoelectronic applications. The results of this study clearly show that the studied ZnSe film can be used for optoelectronic device applications.