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Article Citation - WoS: 22Citation - Scopus: 21Synthesis and Thermoluminescence Properties of Rare Earth Oxides (y, Ce-Lu) Doped Lithium Triborate(Elsevier Science Bv, 2011) Depci, Tolga; Ozbayoglu, Gulhan; Yilmaz, AysenLithium triborate (LiB(3)O(5)) was synthesized by high temperature solid-state reaction method, and then rare earth oxides were doped into LiB(3)O(5) to enhance its thermoluminescent (TL) properties. The identification and characteristics of the obtained compounds were determined by X-ray diffraction (XRD), Fourier transform infrared (FTIR) analyses, differential thermal analyses (DTA) and scanning electron microscopy (SEM). The glow curves were obtained using a thermoluminescent (TL) reader. The results revealed that all the rare earth oxides were not good activators for lithium triborate and the obtained compounds could not be used for dosimetric applications.Article Citation - WoS: 51Citation - Scopus: 54Atomic Layer Deposition-sio2 Layers Protected Pdconi Nanoparticles Supported on Tio2 Nanopowders: Exceptionally Stable Nanocatalyst for the Dehydrogenation of Formic Acid(Elsevier Science Bv, 2017) Caner, Nurdan; Bulut, Ahmet; Yurderi, Mehmet; Ertas, Ilknur Efecan; Kivrak, Hilal; Kaya, Murat; Zahmakiran, MehmetTiO2 nanopowders supported trimetallic PdCoNi alloy nanoparticles were simply and reproducibly prepared by wet-impregnation followed by simultaneous reduction method, then to enhance their stability against to sintering and leaching atomic layer deposition (ALD) technique was utilized to grow SiO2 layers amongst these surface bound PdCoNi alloy nanoparticles (PdCoNi/TiO2-ALD-SiO2). These new nanomaterials are characterized by the combination of complimentary techniques and sum of their results exhibited that the formation of ALD-SiO2 layers protected well-dispersed and highly crystalline PdCoNi alloy nanoparticles (ca. 3.52 nm) supported on TiO2 nanopowders. The catalytic performance of the resulting PdCoNi/TiO2-ALD-SiO2 in terms of activity, selectivity and stability was investigated in the dehydrogenation of aqueous formic acid (HCOOH), which has recently been suggested as a promising hydrogen storage material with a 4.4 wt% hydrogen capacity, solution under mild conditions. The results collected from our systematic studies revealed that PdCoNi/TiO2-ALD-SiO2 nanomaterial can act as highly active and selective nanocatalyst in the formic acid dehydrogenation at room temperature by providing an initial turnover frequency (TOF) value of 207 mol H-2/mol metal;: h and >99% of dehydrogenation selectivity at almost complete conversion. More importantly, the catalytic reusability experiments separately carried out with PdCoNi/TiO2-ALD-SiO2 and PdCoNi/TiO2 nanocatalysts in the dehydrogenation of formic acid under more forcing conditions pointed out that PdCoNi/TiO2-ALD-SiO2 nanocatalyst displays unprecedented catalytic stability against to leaching and sintering throughout the reusability experiments it retains almost its inherent activity, selectivity and conversion even at 20th reuse, whereas analogous PdCoNi/TiO2 completely lost its catalytic performance. (C) 2017 Elsevier B.V. All rights reserved.Article Citation - WoS: 8Citation - Scopus: 9Development of a New and Simplified Procedure for the Experimental Determination of Forming Limit Curves(Elsevier Science Bv, 2015) Karadogan, C.; Tamer, M. E.This study aims to eliminate the off-centric initiation of localization caused by friction in the Nakazima testing of forming limit curves (FLCs). Our proposed approach uses an ordinary Nakazima testing equipment and standard Nakazima geometries for specimens. The principle is based on a layer of relatively thick, flexible and durable polyurethane disc, whose coherent deformation ensures strain localization at the pole. The main advantages of this approach are the simplicity of the equipment and testing, inexpensiveness, and yet the coverage of the entire strain range relevant to sheet metal forming. The technique is validated by experimental and numerical FLC investigations. (C) 2015 CIRP.Article Citation - WoS: 153Citation - Scopus: 156Pd-mnox< Nanoparticles Dispersed on Amine-Grafted Silica: Highly Efficient Nanocatalyst for Hydrogen Production From Additive-Free Dehydrogenation of Formic Acid Under Mild Conditions(Elsevier Science Bv, 2015) Bulut, Ahmet; Yurderi, Mehmet; Karatas, Yasar; Zahmakiran, Mehmet; Kivrak, Hilal; Gulcan, Mehmet; Kaya, MuratHerein we report the development of a new highly active, selective and reusable nanocatalyst for additive-free dehydrogenation of formic acid (HCOOH), which has great potential as a safe and convenient hydrogen carrier for fuel cells, under mild conditions. The new catalyst system consisting of bimetallic Pd-MnOx nanoparticles supported on aminopropyl functionalized silica (Pd-MnOx/SiO2-NH2) was simply and reproducibly prepared by deposition-reduction technique in water at room temperature. The characterization of Pd-mnO(x)/SiO2-NH2 catalyst was done by the combination of multipronged techniques, which reveals that the existence of highly crystalline individually nucleated Pd(0) and MnOx nanoparticles (d(mean) = 4.6 +/- 1.2 nm) on the surface of aminopropyl functionalized silica. These supported Pd-MnOx nanoparticles can catalyze the additive-free dehydrogenation of formic acid with record activity (TOF = 1300 h(-1)) at high selectivity (>99%) and conversion (>99%) under mild conditions (at 50 degrees C and under air). Moreover, easy recovery plus high durability of these supported Pd-MnOx nanoparticles make them a reusable heterogeneous catalyst in the additive-free dehydrogenation of formic acid. (C) 2014 Elsevier B.V. All rights reserved.Article Citation - WoS: 19Citation - Scopus: 19Effect of Indium Nano-Sandwiching on the Structural and Optical Performance of Znse Films(Elsevier Science Bv, 2017) Al Garni, S. E.; Qasrawi, A. F.In the current study, we attempted to explore the effects of the Indium nanosandwiching on the mechanical and optical properties of the physically evaporated ZnSe thin films by means of X-ray diffractions and ultraviolet spectrophotometry techniques. While the thickness of each layer of ZnSe was fixed at 1.0 mu m, the thickness of the nanosandwiched Indium thin films was varied in the range of 25- 100 nm. It was observed that the as grown ZnSe films exhibits cubic and hexagonal nature of crystallization as those of the ZnSe powders before the film deposition. The cubic phases weighs similar to 70% of the structure. The analysis of this phases revealed that there is a systematic variation process presented by the decreasing of; the lattice constant, compressing strain, stress, stacking faults and dislocation intensity and increasing grain size resulted from increasing the Indium layer thickness in the range of 50-100 nm. In addition, the nanosandwiching of Indium between two layers of ZnSe is observed to enhance the absorbability of the ZnSe. Particularly, at incident photon energy of 2.38 eV the absorbability of the ZnSe films which are sandwiched with 100 nm Indium is increased by 13.8 times. Moreover, increasing the thickness of the Indium layer shrinks the optical energy band gap. These systematic variations in mechanical and optical properties are assigned to the better recrystallization process that is associated with Indium insertion which in turn allows total internal energy redistribution in the ZnSe films through the enlargement of grains. (C) 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license.Article Citation - WoS: 7Citation - Scopus: 7Design of the Zns/Ge pn Interfaces as Plasmonic, Photovoltaic and Microwave Band Stop Filters(Elsevier Science Bv, 2017) Alharbi, S. R.; Qasrawi, A. F.In the current work, we report and discuss the features of the design of a ZnS (300 nm)/Ge (300 nm)/GaSe (300 nm) thin film device. The device is characterized by the X-ray diffraction, electron microscopy, energy dispersive X-ray spectroscopy (EDS), optical spectroscopy, microwave power spectroscopy and light power dependent photoconductivity. While the X-ray diffraction technique revealed a polycrystalline ZnS coated with two amorphous layers of Ge and GaSe, the hot probe tests revealed the formation of pn interface. The optical spectra which were employed to reveal the conduction and valence band offsets at the ZnS/Ge and Ge/GaSe interface indicated information about the dielectric dispersion at the interface. The dielectric spectra of the ZnS/Ge/GaSe heterojunction which was modeled assuming the domination of surface plasmon interactions through the films revealed a pronounced increase in the drift mobility of free carriers in the three layers compared to the single and double layers. In the scope of the fitting parameters, a wave trap that exhibit filtering properties at notch frequency of 2.30 GHz was designed and tested. The ac signals power spectrum absorption reached similar to 99%. In addition, the photocurrent analysis on the ZnS/Ge/GaSe interface has shown it is suitability for photovoltaic and photosensing applications. (C) 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND licenseArticle Citation - WoS: 125Citation - Scopus: 130Pdau-mnox< Nanoparticles Supported on Amine-Functionalized Sio2 for the Room Temperature Dehydrogenation of Formic Acid in the Absence of Additives(Elsevier Science Bv, 2016) Karatas, Yasar; Bulut, Ahmet; Yurderi, Mehmet; Ertas, Ilknur Efecan; Alal, Orhan; Gulcan, Mehmet; Zahmakiran, MehmetFormic acid (HCOOH) has recently been suggested as a promising hydrogen carrier for fuel cell applications. However efficient hydrogen production through the decomposition of formic acid in the absence of additives under mild thermodynamic conditions constitutes a major challenge because of the ease poisoning of active metals with CO formed as intermediate during formic acid decomposition. Recently, we have reported (App. Catal. B: Env. 164 (2015) 324) our discovery that the separately nucleated MnOx nanoparticles act as CO-sponge around catalytically active Pd nanoparticles exist on the same support and enhances both the activity and CO-resistivity of Pd nanoparticles. Using this important finding, herein, we present a new catalyst system consists of the physical mixture of PdAu alloy and MnOx nanoparticles supported on amine-grafted silica (PdAu-MnOx/N-SiO2) for the room temperature dehydrogenation of formic acid in the absence of any additives. PdAu-MnOx/N-SiO2 catalyst was simply prepared by deposition-reduction technique in water at room temperature with high reproducibility and characterized by the combination of various spectroscopic tools including ICP-OES, P-XRD, DR/UV-vis, XPS, BFTEM, STEM-EDX, STEM-line analysis and CO-stripping voltammetry techniques. The sum of their results shows that the formation of physical mixture of PdAu alloy and MnOx (dmean=2.2 nm) nanoparticles on the surface of support material. This new catalytic material facilitates the hydrogen liberation through the additive-free formic acid dehydrogenation at room temperature with previously unprecedented activity (TOF=785 mol H-2 mol catalyst(-1) h(-1)), converging to that of the existing state of the art homogenous catalysts. This new superior catalytic system enables facile catalyst recovery and very high stability against agglomeration, leaching and CO poisoning, which make it highly reusable catalyst (retains >92% activity and 85% conversion at the 5th catalytic reuse) in the additive-free formic acid dehydrogenation at room temperature. (C) 2015 Elsevier B.V. All rights reserved.Article Citation - WoS: 203Citation - Scopus: 213Palladium Nanoparticles Supported on Amine-Functionalized Sio2 for the Catalytic Hexavalent Chromium Reduction(Elsevier Science Bv, 2016) Celebi, Metin; Yurderi, Mehmet; Bulut, Ahrnet; Kaya, Murat; Zahmakiran, MehmetHexavalent chromium (Cr(VI)) is commonly identified acutely toxic, a proven mutagen and carcinogen heavy metal pollutant in the aquatic environment, whereas Cr(III) is believed to be an essential element. In the present study, we show that palladium(0) nanoparticles supported on 3-aminopropyltriethoxysilane (APTS) functionalized silica (Pd@SiO2-NH2) effectively catalyze the reduction of Cr(VI) to Cr(III) by using formic acid (HCOOH) as reducing agent under mild conditions (at room temperature under air). Pd@SiO2-NH2 catalyst was reproducibly prepared by deposition-reduction technique and characterized by the combination of various spectroscopic tools including ICP-OES, P-XRD, DR/UV-vis, XPS, BFTEM, HRTEM and TEM-EDX techniques. The sum of their results is indicative of the formation of well-dispersed palladium(0) nanoparticles (d(mean) = 3.7 nm) on the surface of APTS-functionalized SiO2. The catalytic performance of the resulting palladium(0) nanoparticles in terms of activity and stability was evaluated by the catalytic reduction of Cr(VI) to Cr(III) in aqueous solution in the presence of formic acid as a reducing agent. Our results reveal that Pd@SiO2-NH2 catalyst displays unprecedented activity (TOF = 258 mol Cr2O72-/mol Pd min) and reusability (<85% at 5th reuse) for the reduction of Cr(VI) to Cr(III) at room temperature. The present study reported here also includes the compilation of wealthy kinetic data for Pd@SiO2-NH2 catalyzed the reduction of Cr(VI) to Cr(III) in aqueous formic acid (HCOOH)-sodium formate (HCOONa) solution depending on substrate [Cr2O72-], catalyst [Pd@SiO2-NH2], surface grafted amine [APTS], formic acid [HCOOH], sodium formate [HCOONa] concentrations, temperature and type of support material (Al2O3, C, unmodified SiO2) to understand the nature of the catalytic reaction and determine the rate expression and activation parameters. (C) 2015 Elsevier B.V. All rights reserved.Article Citation - WoS: 9Citation - Scopus: 9Design and Characterization of Au/In4< Field Effect Transistors(Elsevier Science Bv, 2018) Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal kappa-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 degrees C in a vacuum media. The coating of the kappa-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies. (C) 2018 The Authors. Published by Elsevier B.V.Article Citation - WoS: 6Citation - Scopus: 6Al/Cdse Resonant Tunneling Thin Film Transistors(Elsevier Science Bv, 2017) Qasrawi, A. F.; Kayed, T. S.; Elsayed, Khaled A.An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10(-5) mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The de current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62x10(3) as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the AVCdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches.
