4609 results
Search Results
Now showing 1 - 10 of 4609
Article Citation - WoS: 2Citation - Scopus: 2Electron-Lattice Interaction Scattering Mobility in Tl2ingase4< Single Crystals(Iop Publishing Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGaSe(4) single crystal have been recorded and analyzed to investigate the dominant scattering mechanism in the crystal. The data analyses have shown that this crystal exhibits an extrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant above and below 260 K, respectively. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis has shown that the above maintained 0.512 eV energy level is a donor impurity level. The compensation ratio for this crystal is determined as 0.96. The Hall mobility of Tl(2)InGaSe(4) is found to be limited by the scattering of electron-acoustic phonon interactions. The calculated theoretical acoustic phonon scattering mobility agrees with the experimental one under the condition that the acoustic deformation potential is 12.5 eV.Article Citation - WoS: 41Citation - Scopus: 52Discussion on Generalized-(αψ, Βφ)-Contractive Mappings Via Generalized Altering Distance Function and Related Fixed Point Theorems(Hindawi Ltd, 2014) Berzig, Maher; Karapinar, Erdal; Roldan-Lopez-de-Hierro, Antonio-FranciscoWe extend the notion of (alpha psi, beta phi)-contractive mapping, a very recent concept by Berzig and Karapinar. This allows us to consider contractive conditions that generalize a wide range of nonexpansive mappings in the setting of metric spaces provided with binary relations that are not necessarily neither partial orders nor preorders. Thus, using this kind of contractive mappings, we show some related fixed point theorems that improve some well known recent results and can be applied in a variety of contexts.Article Citation - WoS: 2Citation - Scopus: 19Periodic Points of Weaker Meir-Keeler Contractive Mappings on Generalized Quasimetric Spaces(Hindawi Publishing Corporation, 2014) Lin, Ing-Jer; Chen, Chi-Ming; Karapinar, ErdalBy using the weaker Meir-Keeler function phi and the triangular alpha-admissible mapping alpha, we introduce the notion of (alpha - phi)-weaker Meir-Keeler contractive mappings and prove a theorem which assures the existence of a periodic point for these mappings on generalized quasimetric spaces.Article Citation - WoS: 18Citation - Scopus: 21Research Trends in Management Issues of Global Software Development: Evaluating the Past To Envision the Future(Taylor & Francis inc, 2011) Mishra, Deepti; Mishra, AlokThis paper presents research trends in management issues (project management, process management, knowledge management, requirements management, configuration management, risk management, quality management) of distributed/global information system development. The main objective is to highlight the current research and practice direction in these areas. The results are based on peer-reviewed conference papers/journal articles, published between 2000 and early 2011. The analysis revealed that most research has been done in project management, process management, knowledge management and requirements management areas while configuration, risk, and quality management issues could get only limited attention in global/distributed information system development. This indicates the need for future research (quantitative and qualitative) in these areas.Article Citation - WoS: 5Citation - Scopus: 5Electrochemical Polymerization of Para-Substituted Haloanilines(Taylor & Francis inc, 2006) Cihaner, A; Önal, AMPolyhaloanilines: poly(4-fluoroaniline) (P4FAN), poly(4-chloroaniline) (P4CAN), and poly(4-bromoaniline) (P4BAN), are synthesized from para-substituted haloaniline monomers; 4-fluoroaniline (4FAN), 4-chloroaniline (4CAN), and 4-bromoaniline (4BAN), respectively, via constant potential electrolysis (CPE) in acetonitrile-water mixture (1:1 v/v) with NaClO4 as supporting electrolyte. Prior to CPE, electrochemical behavior of the monomers were investigated in organic medium utilizing cyclic voltammetry (CV). The course of CPE was monitored using in-situ UV-VIS spectroscopic technique. Characterization of polymer products have been carried out using FT-IR and NMR spectroscopic techniques and thermal behaviors were studied using differential scanning calorimeter (DSC). Polyhaloanilines synthesized by electrochemical oxidation were doped using iodine and the change in the paramagnetic behavior was monitored by ESR, UV-VIS, and FT-IR.Article Citation - WoS: 59Citation - Scopus: 68Generalized (c)-conditions and Related Fixed Point Theorems(Pergamon-elsevier Science Ltd, 2011) Karapinar, Erdal; Tas, Kenan; Karapnar, ErdalIn this manuscript, the notion of C-condition [K. Suzuki, Fixed point theorems and convergence theorems for some generalized nonexpansive mappings, J. Math. Anal. Appl. 340 (2008) 1088-1095] is generalized. Some new fixed point theorems are obtained. (C) 2011 Elsevier Ltd. All rights reserved.Article Citation - WoS: 38Citation - Scopus: 60Career Abandonment Intentions among Software Workers(Wiley, 2014) Colomo-Palacios, Ricardo; Casado-Lumbreras, Cristina; Misra, Sanjay; Soto-Acosta, PedroWithin the software development industry, human resources have been recognized as one of the most decisive and scarce resources. Today, the retention of skilled IT (information technology) personnel is a major issue for employers and recruiters as well, since IT career abandonment is a common practice and means not only the loss of personnel, knowledge, and skills, but also the loss of business opportunities. This article seeks to discover the main motivations young practitioners abandon the software career. To achieve this objective, two studies were conducted. The first study was qualitative (performed through semistructured interviews) and intended to discover the main variables affecting software career abandonment. The second study was quantitative, consisting of a Web-based survey developed from the output of the first study and administered to a sample of 148 IT practitioners. Results show that work-related, psychological, and emotional variable are the most relevant group of variables explaining IT career abandonment. More specifically, the three most important variables that motivate employees to abandon the career are effort-reward imbalance, perceived workload, and emotional exhaustion. In contrast, variables such as politics and infighting, uncool work, and insufficient resources influence to a lesser extent the decision to leave the career. (c) 2012 Wiley Periodicals, Inc.Article Citation - WoS: 5Citation - Scopus: 5Physical Characterization of Thermally Evaporated Sn-Sb Thin Films for Solar Cell Applications(Springer Heidelberg, 2023) Bektas, Tunc; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, MehmetThe substitution of Sb in binary SnSe structure may lead to tailoring the physical properties of both SnSe and SbSe, promising absorber layers for thin film solar cells. The resulting Sn-Sb-Se structure could be an outstanding material for photovoltaic applications. In this study, Sn-Sb-Se thin films were deposited by thermal evaporation, and the effect of annealing on the films' structural, optical, and electrical properties were reported. XRD measurement shows that annealing at 300 degrees C yields the best crystalline quality, and structural parameters were calculated using XRD data. SEM and AFM measurements indicate deformation in the film surface after annealing at 400 degrees C. UV-Vis spectroscopy measurement provides a high absorption coefficient which indicates a direct band gap. The band gap and activation energies of the as-grown sample were found as 1.59 eV and 106.1 meV, respectively. The results of SEM, AFM, XRD, Raman, UV-Vis spectroscopy and temperature-dependent photoconductivity measurements were discussed throughout the paper.Article Citation - WoS: 18Citation - Scopus: 21Modeling Dependence Between Two Multi-State Components Via Copulas(Ieee-inst Electrical Electronics Engineers inc, 2014) Eryilmaz, SerkanModeling statistical dependence between two systems or components is an important problem in reliability theory. Such a problem has been well studied for binary systems and components. In the present paper, we provide a way for modeling s-dependence between two multi-state components. Our method is based on the use of copulas which are very popular for modeling s-dependence. We obtain expressions for the joint state probabilities of the two components, and illustrate the results for the case when the degradation in both components follows a Markov process.Article Citation - WoS: 15Citation - Scopus: 16Electrical Parameters of Al/Inse Rf Sensors(Iop Publishing Ltd, 2014) Qasrawi, A. F.An Al/InSe/C Schottky device is designed on the surface of amorphous InSe thin films. The device is observed to exhibit a switching property at particular biasing voltages. The 'on/off' current ratio is found to be 7.9 and 9.3 at forward and reverse biasing voltages of 2.0 and 2.25 V, respectively. The 'off' and 'on' operational modes are ascribed to the domination of the tunneling of charged particles through a barrier height of 0.83 eV with a depletion region width of 64 nm and due to the domination of the thermionic emission of charged carriers over a barrier height of 0.53 eV, respectively. In addition, the spectral analysis of the capacitance of the device which was carried in the frequency range of 10.0 k-3.0 GHz reflected dc voltage biasing-dependent high quality resonating peaks. The strongest one appeared at a frequency of 36.8 MHz for a biasing voltage of 0.70 V. Furthermore, the loss tangent of the Al/InSe/C device is found to be of the order of 10(-7) at 3.0 GHz. Consistently, the capacitance-voltage spectra of these sensors reflected pronounced tunability up to 100 MHz. The Al/InSe/C device performance, the switching properties and the quality of the resonance peaks indicate the possibility of using these sensors in RF technology.

