Electron-Lattice Interaction Scattering Mobility in Tl<sub>2</Sub>ingase<sub>4< Single Crystals

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2008

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Iop Publishing Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGaSe(4) single crystal have been recorded and analyzed to investigate the dominant scattering mechanism in the crystal. The data analyses have shown that this crystal exhibits an extrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant above and below 260 K, respectively. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis has shown that the above maintained 0.512 eV energy level is a donor impurity level. The compensation ratio for this crystal is determined as 0.96. The Hall mobility of Tl(2)InGaSe(4) is found to be limited by the scattering of electron-acoustic phonon interactions. The calculated theoretical acoustic phonon scattering mobility agrees with the experimental one under the condition that the acoustic deformation potential is 12.5 eV.

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Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686

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20

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15

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