Electron-Lattice Interaction Scattering Mobility in Tl<sub>2</Sub>ingase<sub>4< Single Crystals

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:34:05Z
dc.date.available 2024-07-05T14:34:05Z
dc.date.issued 2008
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Alquds Open Univ, Fac Educ, Jenin, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGaSe(4) single crystal have been recorded and analyzed to investigate the dominant scattering mechanism in the crystal. The data analyses have shown that this crystal exhibits an extrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant above and below 260 K, respectively. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis has shown that the above maintained 0.512 eV energy level is a donor impurity level. The compensation ratio for this crystal is determined as 0.96. The Hall mobility of Tl(2)InGaSe(4) is found to be limited by the scattering of electron-acoustic phonon interactions. The calculated theoretical acoustic phonon scattering mobility agrees with the experimental one under the condition that the acoustic deformation potential is 12.5 eV. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1088/0953-8984/20/15/155204
dc.identifier.issn 0953-8984
dc.identifier.issue 15 en_US
dc.identifier.scopus 2-s2.0-42549120212
dc.identifier.uri https://doi.org/10.1088/0953-8984/20/15/155204
dc.identifier.uri https://hdl.handle.net/20.500.14411/1017
dc.identifier.volume 20 en_US
dc.identifier.wos WOS:000254329200014
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Iop Publishing Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 2
dc.subject [No Keyword Available] en_US
dc.title Electron-Lattice Interaction Scattering Mobility in Tl<sub>2</Sub>ingase<sub>4< Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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