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Article Citation - WoS: 26Citation - Scopus: 26Photoelectronic, optical and electrical properties of TlInS2 single crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the donor energy levels located at 360, 280, 152 and 112 meV were detected. The photocurrent-illumination intensity dependence follows the law I-Ph proportional to F-gamma with gamma being 1.0 (linear), 0.5 (sublinear), 1.0 (linear) and 1.3 (supralinear) at low, moderate, high and very high illumination intensities indicating the monomolecular in the bulk, bimolecular and strong recombination at the surface, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature (T-m) 245 K. T is observed to shift to higher temperature as F increases, and disappears in the region where I-Ph-F dependence is supralinear. The phenomenon is attributed to the exchange in the behavior of the sensitizing and recombination centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.Article Citation - WoS: 28Citation - Scopus: 28Photoelectronic and Electrical Properties of Cuin5s8< Single Crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50-460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent-illumination intensity dependence (F) follows the law I(ph)alphaF(gamma), with gamma being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, tau(n), is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, tau(n) decrease with decreasing illumination intensity. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 9Citation - Scopus: 9Electrical Properties of Bi1.5znsb1.5< Pyrochlore Ceramics(Wiley-v C H verlag Gmbh, 2003) Kayed, TS; Mergen, ABi1.5ZnSb1.5O7 pyrochlore samples were prepared by solid state reaction method. They were examined by x-ray diffraction and scanning electron microscopy. Single phase, belongs to the cubic pyrochlore structure, with a lattice parameter of 10.442 Angstrom and grain size that varies from 16 to 20 mum was obtained. The electrical properties were measured at different temperatures in the range 15-330 K under different applied magnetic fields up 1.4 T. In our measurements for Hall coefficient, Hall resistivity, and mobility; we noticed an anomalous behavior at two temperatures (around 250 and 310 K) which was supported by the I-V measurements (double transition of the slope of I-V characteristics (beta) at the same temperatures). This was discussed in terms of polarization phenomenon and mixed ionic-electronic conduction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 16Citation - Scopus: 17Investigation of Localized Levels in Gas0.5se0.5< Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements(Wiley-v C H verlag Gmbh, 2002) Qasrawi, AF; Gasanly, NMTo identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal an additional donor level with activation energy of 0.40 eV indicating the extrinsic nature of conduction. The spectral distribution of photocurrent in the photon energy range of 0.65-5.9 eV reveals an indirect band gap of 2.26 eV. The photocurrent-illumination intensity dependence follows the law I-ph proportional to F-gamma, with gamma being 1.0, 0.65, and 0.5 at low, moderate and high illumination intensities, respectively. The corresponding behavior indicates the domination of monomolecular recombination, near equal densities of trapped and recombination centers and bimolecular recombination. It is observed that the photocurrent increases in the temperature range from 250 K up to T-m = 360 K and decreases for T > T-m. The temperature dependence of the photocurrent reveals two additional impurity levels with activation energies of 0.14 and 0.10 eV below and above Tm, respectively.Article Citation - WoS: 5Citation - Scopus: 6Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor(Wiley-v C H verlag Gmbh, 2003) Kayed, TSLithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 30Citation - Scopus: 31Optoelectronic and Electrical Properties of Tlgas2 Single Crystal(Wiley-v C H verlag Gmbh, 2005) Qasrawi, AF; Gasanly, NMThe optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static refractive index of 2.50. The dark Hall coefficient measurements have shown that the crystals exhibit a conductivity type conversion from p-type to n-type at a critical temperature of 315 K. Deep donor and acceptor energy levels of 0.37/0.36 eV and 0.66 eV has been calculated from the temperature dependence of Hall coefficient and resistivity, and photocurrent measurements, respectively. The photocurrent decreases with decreasing temperature. The analysis of the photocurrent data have revealed that, the recombination mechanism is linear and supralinear above and below 290 K, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 11Citation - Scopus: 11Microstructural, thermal, and electrical properties of Bi1.7V0.3Sr2Ca2Ca3Ox glass-ceramic superconductor(Wiley-v C H verlag Gmbh, 2004) Kayed, TS; Calinli, N; Aksu, E; Koralay, H; Günen, A; Ercan, I; Cavdar, SA glass-ceramic Bi1.7V0.3Sr2Ca2Cu3Ox superconductor was prepared by the melt-quenching method. The compound was characterized by scanning electron microscopy, x-ray diffraction, differential thermal analysis, current-voltage characteristics, transport resistance measurements, and Hall effect measurements. Two main phases (BSCCO 2212 and 2223) were observed in the x-ray data and the values of the lattice parameters quite agree with the known values for 2212 and 2223 phases. The glass transition temperature was found to be 426 degreesC while the activation energy for crystallization of glass has been found to be E-a = 370.5 kJ / mol. This result indicates that the substitution of vanadium increased the activation energy for the BSCCO system. An offset T-c of 80 K was measured and the onset T-c was 100 K. The Hall resistivity rho(H) was found to be almost field-independent at the normal state. A negative Hall coefficient was observed and no sign reversal of rho(H) or RH could be noticed. The mobility and carrier density at different temperatures in the range 140-300 K under different applied magnetic fields up to 1.4 T were also measured and the results are discussed.Article Citation - WoS: 30Citation - Scopus: 29Optoelectronical Properties of Polycrystalline Β-Gase Thin Films(Wiley-v C H verlag Gmbh, 2006) Qasrawi, AF; Ahmad, MMS; Shukri Ahmad, M.M.Polycrystalline beta-GaSe thin films were obtained by the thermal evaporation of GaSe crystals onto glass substrates kept at 300 degrees C under a pressure of 10(-5) Torr. The transmittance and reflectance of these films was measured in the incident photon energy range of 1.1-3.70 eV. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct allowed transitions band gap of 1.83 eV. The data analysis allowed the identification of the dispersive optical parameters by calculating the refractive index in the wavelength region of 620-1100 nm. In addition, the photocurrent of the samples was studied as function of incident illumination-intensity and temperature. The photocurrent is found to exhibit sublinear and supralinear character above and below 270 K, respectively. The temperature dependent photocurrent data analysis allowed the calculation of photocurrent activation energies as 603, 119 and 45 meV being dominant in the temperature regions of 250-300 K, 180-240 K and 80-160 K, respectively. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 4Citation - Scopus: 4Electrical, Optical and Photoconductive Properties of Poly(dibenzo-18(Wiley-v C H verlag Gmbh, 2004) Qasrawi, AF; Cihaner, A; Önal, AMTo investigate the energy levels, absorption bands, band gap, dominant transport mechanisms, recombination mechanisms and the free carrier life time behavior of poly-dibenzo-18-crown-6, poly-DB18C6, films, the dark electrical conductivity in the temperature range of 200-550 K, the absorbance and photocurrent spectra, the photocurrent -illumination intensity and time dependence at 300 K were studied. The dark electrical conductivity measurements revealed the existence of three energy levels located at 0.93, 0.32 and 0.76 eV below the tails of the conduction band. The main transport mechanism in the dark was found to be due to the thermal excitation of charge carriers and the variable range hopping above and below 260 K, respectively. The photocurrent and absorbance spectra reflect a band gap of 3.9 eV. The photocurrent -illumination intensity dependence reflects the sublinear, linear and supralinear characters indicating the decrease, remaining constant and increase in the free electron life time that in turn show the bimolecular, strong and very strong recombination characters at the surface under the application of low, moderate and high illumination intensity, respectively. A response time of 25.6 s was calculated from the decay Of I-ph-time dependence. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 27Citation - Scopus: 30Crystal Data, Electrical Resistivity, and Hall Mobility of N-Type Agin5s8< Single Crystals(Wiley-v C H verlag Gmbh, 2001) Qasrawi, AF; Gasanly, NMThe X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
