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Citation - WoS: 1
Citation - Scopus: 1
Growth and Optical Properties of (na_0.5bi_{0.5< (x=0.25) Single Crystal: a Potential Candidate for Optoelectronic Devices}
(Springer, 2024) Guler, I.; Isik, M.; Gasanly, N.
Double tungstates (DT) and double molybdates (DM) have significant importance because of their optoelectronic applications. Regarding the importance of DT and DM, we investigated experimentally structural and optical properties of (Na0.5Bi0.5)(Mo1-xWx)O-4 (x = 0.25) crystal that belongs to the NaBi-DT and DM crystals group. Czochralski method was used to grow the single crystals. The structure of the crystal was identified using X-ray diffraction (XRD) measurements. Two sharp peaks associated with tetragonal crystal structure appeared in the pattern. Vibrational modes of the studied crystal were obtained from the Raman experiments. By the help of the Fourier transform infrared spectrophotometer (FTIR) measurements, infrared transmittance spectrum of the studied compound was recorded. Band gap energy wase found around 3.04 eV using two methods, Tauc and derivative analysis, based on transmission spectrum. Based on the analysis of absorption coefficient, Urbach energy was obtained as 0.22 eV. The revealed structural and optical properties of the crystal indicated that the material may be a candidate for optoelectronic devices in which NaBi(MoO4)(2) and NaBi(WO4)(2) materials are utilized.
Citation - WoS: 5
Citation - Scopus: 5
Low-Temperature Thermoluminescence in Layered Structured Ga_0.75in_{0.25< Single Crystals}
(Elsevier Science Sa, 2012) Isik, M.; Bulur, E.; Gasanly, N. M.
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels. (C) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 23
Citation - Scopus: 25
Investigation of Optical Properties of Bi₁₂geo_{20< Sillenite Crystals by Spectroscopic Ellipsometry and Raman Spectroscopy}
(Elsevier Sci Ltd, 2020) Isik, M.; Delice, S.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.
Bi12GeO20 (BGO) compound is one of the fascinating members of sillenites group due to its outstanding photorefractive and photocatalytic characteristics. The present paper aims at investigating optical properties of BGO crystals by means of spectroscopic ellipsometry and Raman spectroscopy measurements. Bi12GeO20 single crystals grown by Czochralski method were structurally characterized by X-ray diffraction (XRD) experiments and the analyses showed that studied crystals have cubic crystalline structure. Raman spectrum exhibited 15 peaks associated with A, E and F modes. Spectroscopic ellipsometry measurement data achieved in the energy region between 1.2 and 6.2 eV were used in the air/sample optical model to get knowledge about complex pseudodielectric constant, pseudorefractive index, pseudoextinction and absorption coefficients of the crystals. Spectral change of real and imaginary part of complex pseudodielectric constant were discussed in detail. Band gap energy of Bi12GeO20 single crystals was calculated to be 3.18 eV using absorption coefficient dependency on photon energy. Critical point energies at which photons are strongly absorbed were determined by utilizing the second energy derivative spectra of components of complex pseudodielectric function. Fitting of both spectra resulted in the presence of four interband transitions with energies of 3.49, 4.11, 4.67 and 5.51 eV.
Citation - WoS: 4
Citation - Scopus: 4
Trapping Centers in Bi₁₂tio_{20< Single Crystals by Thermally Stimulated Current}
(Elsevier, 2021) Isik, M.; Delice, S.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.
Sillenite group compounds have been widely utilized in photocatalytic applications. One of the member of this group, Bi12TiO20 single crystal, was grown by Czochralski method. The structural properties were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. XRD pattern presented well-defined intensive peaks associated with cubic crystalline structure. SEM images indicated the crystal surface as almost uniform and smooth. Thermally stimulated current (TSC) experiments were performed in the 10-280 K temperature range to reveal shallow trapping centers in the Bi12TiO20 single crystal. Two peaks around 112 and 179 K were observed in the TSC glow curve. The analyses of these curves considering the curve fitting and peak shape techniques resulted in presence of two hole centers at 0.09 and 0.14 eV. Heating rate dependencies of peak maximum temperature and current were also investigated throughout the paper.
Citation - WoS: 3
Citation - Scopus: 3
Temperature and Excitation Intensity Tuned Photoluminescence in Ga_0.75in_{0.25< Crystals}
(Elsevier Science Bv, 2013) Isik, M.; Guler, I.; Gasanly, N. M.
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals. (c) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 6
Citation - Scopus: 7
Investigation of Linear and Nonlinear Optical Properties of Pbwo4 Single Crystal
(Elsevier, 2022) Delice, S.; Isik, M.; Gasanly, N. M.
In this manuscript, PbWO4 single crystals having great importance for device applications were studied in terms of linear and nonlinear optical properties. For this purpose, transmission and reflection experiments were per-formed in the wavelength range of 350-1000 nm. X-ray diffraction analysis presented crystalline structure as scheelite type tetragonal. Spectral dependencies of absorption coefficient, skin depth, refractive index, dielectric function were reported. Optical band gap of the crystal was estimated as 3.25 eV from the Tauc and derivative spectral methods. Urbach, critical point, single oscillator and dispersion energies, static refractive index and dielectric constant were revealed for PbWO4 single crystal. First-and third-order nonlinear susceptibilities, and nonlinear refractive index were also computed for the studied crystal.
Citation - WoS: 11
Citation - Scopus: 11
Structural and Temperature-Tuned Optical Characteristics of Bi₁₂geo_{20< Sillenite Crystals}
(Elsevier, 2020) Delice, S.; Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.
Sillenite compounds exhibit unique photorefractive and electro-optic characteristics providing attractiveness to these materials in various optoelectronic applications. The present paper aims at investigating one of the members of this family. Structural and optical characteristics of Bi12GeO20 (BGO) were studied by means of x-ray diffraction, Raman spectroscopy and temperature-dependent transmittance measurements. Obtained transmission curves in the wavelength range of 350-1100 nm and at different applied temperatures between 10 and 300 K were employed to find out the absorption coefficient dependence on the photon energy. Tauc relation revealed the presence of an energy gap of 2.49 eV at room temperature. Extension of energy gap up to 2.57 eV due to decreased temperature down to 10 K was deduced by the analysis. In order to have reliable results, the energy gap value was corroborated by utilizing derivative spectral method and well consistency between both methods was indicated. Energy gap change with temperature was also discussed in the study using an empirical formula developed by Varshni. Energy gap at absolute zero and rate of band gap alteration with temperature were determined as 2.57 eV and -2.4 x 10(-4) eV K (- 1), respectively. Taking into account the previously reported studies on investigation of band gap characteristics of BGO, intrinsic Bi-Ge(3+) + V-O(+) defect could be responsible for the revealed energy value of 2.49 eV which is much lower than reported band gap energy of similar to 3.2 eV.
Citation - WoS: 5
Citation - Scopus: 5
Thermoluminescence Properties of Al Doped Zno Nanoparticles
(Elsevier Sci Ltd, 2018) Isik, M.; Gasanly, N. M.
ZnO nanoparticles doped with aluminum (AZO nanoparticles) were investigated using low temperature thermoluminescence (TL) and structural characterization experiments. TL experiments were performed on AZO nanoparticles in the temperature range of 10-300 K. TL curve presented one intensive peak around 123 K and two overlapped peaks to intensive peak around 85 and 150 K for heating rate of 0.1 K/s. Curve fitting and initial rise methods were used to find the activation energies of associated trapping centers. Analyses resulted in the presence of three centers at 0.05, 0.08 and 0.17 eV with peak maximum temperatures (T-m) of 86.2, 121.5 and 147.1 K, respectively. TL experiments were expanded using different heating rates between 0.1 K/s and 0.5 K/s. Behavior of revealed traps was investigated using an experimental technique called as T-m - T-stop method. It was seen that traps are quasi-continuously distributed within the band gap. Structural properties were studied using x-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy experiments.
Citation - WoS: 7
Citation - Scopus: 7
Interband Critical Points in Tlga_x< Layered Mixed Crystals (0 ≤ x ≤ 1)
(Elsevier Science Sa, 2013) Isik, M.; Işık, Mehmet; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights
Citation - WoS: 8
Citation - Scopus: 8
Thermoluminescence Properties of Zno Nanoparticles in the Temperature Range 10-300 K
(Springer, 2016) Isik, M.; Yildirim, T.; Gasanly, N. M.
Low-temperature thermoluminescence (TL) properties of ZnO nanoparticles grown by sol-gel method were investigated in the 10-300 K temperature range. TL glow curve obtained at 0.2 K/s constant heating rate exhibited one broad peak around 83 K. The observed peak was analyzed using curve fitting method to determine the activation energies of trapping center(s) responsible for glow curve. Analyses resulted in the presence of three peaks at 55, 85 and 118 K temperatures with activation energies of 12, 30 and 45 meV, respectively. Thermal cleaning process was applied to separate overlapped peaks and get an opportunity to increase the reliability of results obtained from curve fitting method. Heating rate dependence of glow curve was also studied for rates between 0.2 and 0.7 K/s. The shift of the peak maximum temperatures to higher values and decrease in peak height with heating rate were observed. Moreover, X-ray diffraction and scanning electron microscopy were used for structural characterization.

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