Interband Critical Points in Tlga<i><sub>x</Sub>< Layered Mixed Crystals (0 ≤ <i>x</I> ≤ 1)

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2013

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Elsevier Science Sa

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo

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Semiconductors, Ellipsometry, Optical properties

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Volume

581

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Start Page

542

End Page

546

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https://doi.org/10.1016/j.jallcom.2013.07.134
 https://hdl.handle.net/20.500.14411/104

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