Interband Critical Points in Tlga<i><sub>x</Sub>< Layered Mixed Crystals (0 ≤ <i>x</I> ≤ 1)

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.contributor.author Isik, M.
dc.contributor.author Işık, Mehmet
dc.contributor.author Gasanly, N. M.
dc.contributor.author Işık, Mehmet
dc.contributor.other Department of Electrical & Electronics Engineering
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:26:07Z
dc.date.available 2024-07-05T14:26:07Z
dc.date.issued 2013
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights en_US
dc.identifier.citationcount 7
dc.identifier.doi 10.1016/j.jallcom.2013.07.134
dc.identifier.endpage 546 en_US
dc.identifier.issn 0925-8388
dc.identifier.issn 1873-4669
dc.identifier.scopus 2-s2.0-84881507131
dc.identifier.startpage 542 en_US
dc.identifier.uri https://doi.org/10.1016/j.jallcom.2013.07.134
dc.identifier.uri https://hdl.handle.net/20.500.14411/104
dc.identifier.volume 581 en_US
dc.identifier.wos WOS:000324823000091
dc.identifier.wosquality Q1
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject Semiconductors en_US
dc.subject Ellipsometry en_US
dc.subject Optical properties en_US
dc.title Interband Critical Points in Tlga<i><sub>x</Sub>< Layered Mixed Crystals (0 ≤ <i>x</I> ≤ 1) en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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