Structural and temperature-tuned optical characteristics of Bi<sub>12</sub>GeO<sub>20</sub> sillenite crystals

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Date

2020

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Elsevier

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Sillenite compounds exhibit unique photorefractive and electro-optic characteristics providing attractiveness to these materials in various optoelectronic applications. The present paper aims at investigating one of the members of this family. Structural and optical characteristics of Bi12GeO20 (BGO) were studied by means of x-ray diffraction, Raman spectroscopy and temperature-dependent transmittance measurements. Obtained transmission curves in the wavelength range of 350-1100 nm and at different applied temperatures between 10 and 300 K were employed to find out the absorption coefficient dependence on the photon energy. Tauc relation revealed the presence of an energy gap of 2.49 eV at room temperature. Extension of energy gap up to 2.57 eV due to decreased temperature down to 10 K was deduced by the analysis. In order to have reliable results, the energy gap value was corroborated by utilizing derivative spectral method and well consistency between both methods was indicated. Energy gap change with temperature was also discussed in the study using an empirical formula developed by Varshni. Energy gap at absolute zero and rate of band gap alteration with temperature were determined as 2.57 eV and -2.4 x 10(-4) eV K (- 1), respectively. Taking into account the previously reported studies on investigation of band gap characteristics of BGO, intrinsic Bi-Ge(3+) + V-O(+) defect could be responsible for the revealed energy value of 2.49 eV which is much lower than reported band gap energy of similar to 3.2 eV.

Description

Gasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266

Keywords

Sillenites, Bismuth germanium oxide, Optical properties

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Citation

10

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Volume

66

Issue

Start Page

422

End Page

429

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