63 results
Search Results
Now showing 1 - 10 of 63
Article Citation - WoS: 6Citation - Scopus: 6Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices(Wiley-v C H verlag Gmbh, 2015) Al Garni, S. E.; Qasrawi, A. F.In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.Article Citation - WoS: 39Citation - Scopus: 44Application of Continuum Damage Mechanics in Discontinuous Crack Formation: Forward Extrusion Chevron(Wiley-v C H verlag Gmbh, 2008) Soyarslan, Celal; Tekkaya, A. Erman; Akyuz, UgurhanMaterializing Continuum Damage Mechanics (CDM), numerical modeling of discrete internal cracks, namely central bursts, in direct forward extrusion process is presented. Accordingly, in a thermodynamically consistent setting, a local Lemaitre variant damage model with quasi-unilateral evolution is coupled with hyperelastic-plasticity. The formulations are constructed in the principal axes where simultaneous local integration schemes are efficiently developed. To this end, the framework is implemented as ABAQUS/VUMAT subroutine to be used in an explicit FE solution scheme, and utilized in direct forward extrusion simulations for bearing steel, 100Cr6. Discontinuous cracks are obtained with the element deletion procedure, where the elements reaching the critical damage value are removed from the mesh. The periodicity of the cracks shows well accordance with the experimental facts. The investigations reveal that, application of the quasi-unilateral conditions together with the crack closure parameter has an indispensable effect on the damage accumulation zones by determining their internal or superficial character. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 41Citation - Scopus: 48Platinated Copper(3-Clip Complexes as Effective Dna-Cleaving and Cytotoxic Agents(Wiley-v C H verlag Gmbh, 2008) Ozalp-Yaman, Seniz; de Hoog, Paul; Amadei, Giulio; Pitie, Marguerite; Gamez, Patrick; Dewelle, Janique; Reedijk, JanThe synthesis and biological activity of three heteronuclear platinum-copper complexes based on 3-Clip-Phen are reported. These rigid complexes have been designed to alter the intrinsic mechanism of action of both the platinum moiety and the Cu(3-Clip-Phen) unit. The platinum centers of two of these complexes are coordinated to a 3-Clip-Phen moiety, an ammine ligand and two chlorides, which are either cis or trans to each other. The third complex comprises two 3-Clip-Phen units and two chloride ligands bound in a trans fashion to the platinum ion. DNA-cleavage experiments show that the complexes are highly efficient nuclease agents. In addition, a markedly difference in their aptitude to perform direct double-strand cleavage is observed, which appears to be strongly related to the ability of the platinum unit to coordinate to DNA. Indeed, complex 6 is unable to coordinate to DNA, which is reflected by its incapability to carry out double-strand breaks. Nonetheless, this complex exhibits efficient DNA-cleavage activity, and its cytotoxicity is high for several cell lines. Complex 6 shows better antiproliferate activity than both cisplatin and Cu(3-Clip-Phen) toward most cancer cell lines. Furthermore, the cytotoxicity observed for 1 is for most cell lines close to that of cisplatin, or even better. Cu(3-Clip-Phen) induces very low cytotoxic effects, but a marked migratory activity. Complex 6 presents DNA-cleavage properties comparable to the one of Cu(3-Clip-Phen), but it does not show any migratory activity. Interestingly, both Cu(3-Clip-Phen) and 6 induces vacuolisation processes in the cell in contrast to complex 1 and cisplatin. Thus, the four complexes cisplatin tested, Cu(3-Clip-Phen), I and 6 stimulate different cellular responses.Article Citation - WoS: 7Citation - Scopus: 7Structural and Dielectric Properties of Ba1-x< Solid Solutions(Wiley-v C H verlag Gmbh, 2021) Qasrawi, A. F.; Sahin, Ethem Ilhan; Abed, Tamara Y.; Emek, MehribanHerein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.Article Citation - WoS: 32Citation - Scopus: 32Urine Analysis Using Ftir Spectroscopy: a Study on Healthy Adults and Children(Wiley-v C H verlag Gmbh, 2021) Sarigul, Neslihan; Kurultak, Ilhan; Gokceoglu, Arife Uslu; Korkmaz, FilizUrine spectra from 108 healthy volunteers are studied by attenuated total refraction-Fourier transform infrared (ATR-FTIR) spectroscopy. The spectral features are correlated with observable urine components. The variation of spectra within a healthy population is quantified and a library of reference spectra is constructed. Using the band assignments, these spectra are compared with both age-wise and gender-wise. Children show the least intensity variations compared to both adult groups. Young adults show the highest variation, particularly in the 1650 to 1400 cm(-1) and 1200 to 900 cm(-1) regions. These results indicate the importance of the size of the control group in comparative studies utilizing FTIR. Age-wise comparisons reveal that phosphate and sulfate excretion decreases with age, and that the variance of phosphate among individuals is higher with adults. As for gender-wise comparisons, females show a slightly higher citrate content at 1390 cm(-1) regardless of the age and they show a higher variance in the 1200 to 1000 cm(-1) region when compared to men.Article Citation - WoS: 11Citation - Scopus: 13The Convergence of q-bernstein Polynomials (0 < q < 1) in the Complex Plane(Wiley-v C H verlag Gmbh, 2009) Ostrovska, SofiyaThe paper focuses at the estimates for the rate of convergence of the q-Bernstein polynomials (0 < q < 1) in the complex plane. In particular, a generalization of previously known results on the possibility of analytic continuation of the limit function and an elaboration of the theorem by Wang and Meng is presented. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimArticle Citation - WoS: 9Citation - Scopus: 9Electrical Properties of Bi1.5znsb1.5< Pyrochlore Ceramics(Wiley-v C H verlag Gmbh, 2003) Kayed, TS; Mergen, ABi1.5ZnSb1.5O7 pyrochlore samples were prepared by solid state reaction method. They were examined by x-ray diffraction and scanning electron microscopy. Single phase, belongs to the cubic pyrochlore structure, with a lattice parameter of 10.442 Angstrom and grain size that varies from 16 to 20 mum was obtained. The electrical properties were measured at different temperatures in the range 15-330 K under different applied magnetic fields up 1.4 T. In our measurements for Hall coefficient, Hall resistivity, and mobility; we noticed an anomalous behavior at two temperatures (around 250 and 310 K) which was supported by the I-V measurements (double transition of the slope of I-V characteristics (beta) at the same temperatures). This was discussed in terms of polarization phenomenon and mixed ionic-electronic conduction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 12Citation - Scopus: 15Schwarz Problem for Higher-Order Complex Partial Differential Equations in the Upper Half Plane(Wiley-v C H verlag Gmbh, 2019) Aksoy, Umit; Begehr, Heinrich; Celebi, A. OkayLinear and nonlinear elliptic complex partial differential equations of higher-order are considered under Schwarz conditions in the upper-half plane, Firstly, using the integral representations for the solutions of the inhomogeneous polyanalytic equation with Schvvarz conditions, a class of integral operators is introduced together with some of their properties. Then, these operators are used to transform the problem for linear equations into singular integral equations. In the case of nonlinear equations such a transformation yields a system of integro-differential equations. Existence of the solutions of the relevant boundary value problems for linear and nonlinear equations are discussed via Fredholm theory and fixed point theorems, respectively.Article Citation - WoS: 30Citation - Scopus: 30Optoelectronic and Electrical Properties of Tlgas2 Single Crystal(Wiley-v C H verlag Gmbh, 2005) Qasrawi, AF; Gasanly, NMThe optoelectronic and electrical properties of TIGaS2 single crystals have been investigated by means of room temperature transmittance and reflectance spectral analysis, Hall coefficient, dark electrical resistivity and photocurrent measurements in the temperature range of 200-350 K. The optical data have revealed an indirect and direct allowed transition band gaps of 2.45 and 2.51 eV, an oscillator and dispersion energy of 5.04 and 26.45 eV, respectively, a static dielectric constant of 6.25 and static refractive index of 2.50. The dark Hall coefficient measurements have shown that the crystals exhibit a conductivity type conversion from p-type to n-type at a critical temperature of 315 K. Deep donor and acceptor energy levels of 0.37/0.36 eV and 0.66 eV has been calculated from the temperature dependence of Hall coefficient and resistivity, and photocurrent measurements, respectively. The photocurrent decreases with decreasing temperature. The analysis of the photocurrent data have revealed that, the recombination mechanism is linear and supralinear above and below 290 K, respectively. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 26Citation - Scopus: 26Photoelectronic, optical and electrical properties of TlInS2 single crystals(Wiley-v C H verlag Gmbh, 2003) Qasrawi, AF; Gasanly, NMTo specify the donor energy levels in TlInS2 single crystals, the dark electrical resistivity, photoconductivity and Hall measurements were carried out in the temperature range of 100-400 K, 110-350 K and 170-400 K, respectively. The Hall measurements revealed that the crystals exhibit an anomalous behavior of Hall voltage by changing sign (from p-type to n-type conductivity) at 315 K. By means of the temperature dependence of dark electrical resistivity, Hall coefficient and photocurrent measurements the donor energy levels located at 360, 280, 152 and 112 meV were detected. The photocurrent-illumination intensity dependence follows the law I-Ph proportional to F-gamma with gamma being 1.0 (linear), 0.5 (sublinear), 1.0 (linear) and 1.3 (supralinear) at low, moderate, high and very high illumination intensities indicating the monomolecular in the bulk, bimolecular and strong recombination at the surface, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature (T-m) 245 K. T is observed to shift to higher temperature as F increases, and disappears in the region where I-Ph-F dependence is supralinear. The phenomenon is attributed to the exchange in the behavior of the sensitizing and recombination centers. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

