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Article Citation - WoS: 4Citation - Scopus: 4Electrical Conductivity and Capacitance Spectra of Bi1.37sm0.13< Pyrochlore Ceramic in the Range of 0-3 Ghz(World Scientific Publ Co Pte Ltd, 2014) Qasrawi, A. F.; Bzour, Faten M.; Nazzal, Eman O.; Mergen, A.In this work, the electrical properties of samarium-doped bismuth niobium zinc oxide (Sm-doped BZN) pyrochlore ceramics are investigated by means of temperature dependent electrical conductivity and capacitance spectroscopy in the frequency range of 0-3 GHz. It was observed that the novel dielectric Sm-BZN ceramic exhibits a temperature and electric field dependent dielectric breakdown. When measured at 300 K, the breakdown electric field is 1.12 kV/cm and when heated the breakdown temperature is similar to 420 K. The pyrochlore is thermally active above 440K with conductivity activation energy of 1.37 eV. In addition, the room temperature capacitance spectra reflected a resonance-antiresonance switching property at 53MHz when subjected to an AC signal of low power of 5 dBm. Furthermore, when the Sm-BZN ceramics are used as microwave cavity and tested in the frequency range of 1.0-3.0 GHz, the cavity behaves as low pass filter with wide tunability up to a frequency of 1.91 GHz. At this frequency it behaves as a band rejection filter that blocks waves of 1.91 GHz and 2.57 GHz frequencies. These properties of the Sm-doped BZN are promising as they indicate the usability of the ceramics in digital electronic circuits as resonant microwave cavities suitable for the production of low pass/rejection band filters.Article Citation - WoS: 4Citation - Scopus: 4Characterization of the Ge/Bi2< Interfaces(Univ Fed Sao Carlos, dept Engenharia Materials, 2019) Alharbi, Seham Reef; Qasrawi, Atef FayezIn this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.Article Citation - WoS: 4Citation - Scopus: 5Electrical Characterization of Bi1.50-x< Varactors(World Scientific Publ Co Pte Ltd, 2014) Qasrawi, A. F.; Abu Muis, Khalil O.; Abu Al Rob, Osama H.; Mergen, A.The electrical properties of yttrium doped bismuth zinc niobium oxide (BZN) pyrochlore ceramics are explored by means of temperature dependent electrical conductivity dielectric constant and capacitance spectra in the frequency range of 0-3 GHz. It is observed that the doped BZN exhibit a conductivity type conversion from intrinsic to extrinsic as the doping content increased from 0.04 to 0.06. The thermal energy bandgap of the intrinsic type is 3.45 eV. The pyrochlore is observed to exhibit a dielectric breakdown at 395 K. In addition, a negative capacitance (NC) spectrum with main resonance peak position of 23.2 MHz is detected. The NC effect is ascribed to the increased polarization and the availability of more free carriers in the device. When the NC signal amplitude is attenuated in the range of 0-20 dBm at 50 MHz and 150 MHz, wide tunability is monitored. Such characteristics of the Y-doped BZN are attractive for using them to cancel the positive parasitic capacitance of electronic circuits. The canceling of parasitic capacitance improves the high frequency performance of filter inductors and reduces the common mode noise of the resonance signal.
