Characterization of the Ge/Bi<sub>2< Interfaces

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Date

2019

Authors

Alharbi, Seham Reef
Qasrawı, Atef Fayez Hasan
Qasrawi, Atef Fayez

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Univ Fed Sao Carlos, dept Engenharia Materials

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.

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Qasrawi, Atef Fayez/0000-0001-8193-6975;

Keywords

Ge/Bi2O3, heterojunction, X-ray, electronic switch, microwave cavity

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2

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22

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3

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