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Article Citation - WoS: 12Citation - Scopus: 12Band Offsets, Optical Conduction, and Microwave Band Filtering Characteristics of Γ-in2se3< Heterojunctions(Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef F.; Kmail, Reham R.Herein, the design and experimental characterization of gamma-In2Se3/CuO interfaces are considered. Thin films of gamma-In(2)Se(3)are coated with thin layers of CuO at room temperature. The heterojunction device is structurally, morphologically, and optically characterized. It is observed that the coating of CuO onto gamma-In(2)Se(3)engenders the formation of CuSe(2)at the ultrathin interface. The gamma-In2Se3/CuO heterojunctions exhibit maximum possible conduction and valence band offsets of values 0.47 and 0.96 eV, respectively. The dielectric spectra display two dielectric resonance peaks at 2.96 and 1.78 eV. In addition, analyses of the optical conductivity spectra reveal accurate drift mobility and plasmon frequency values of 31.31 cm(2) Vs(-1)and 1.5 GHz, respectively. The ability of the device to control the signal propagation at gigahertz level is experimentally tested by the impedance spectroscopy technique which proved the ability of the device to behave as bandpass filters of notch frequency of 1.49 GHz. The gamma-In2Se3/CuO heterojunction devices are also observed to display terahertz cutoff frequency values of approximate to 24 THz in the infrared (IR) range of incident photon energy and approximate to 193 THz in the ultraviolet light range. The nonlinear optical performance of the device nominates it for use as terahertz/gigahertz band filters.Article Citation - WoS: 3Citation - Scopus: 3Enhancement of Nonlinear Optical and Dielectric Properties of Cu2o Films Sandwiched With Indium Slabs(Wiley-v C H verlag Gmbh, 2020) Omar, Ahmad; Qasrawi, Atef F.In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu2O display larger, well-ordered grains in an amorphous sea of Cu2O upon insertion of indium slabs between layers of Cu2O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu2O. The drift mobility and plasmon frequency values reach 232.4 cm(2) V-1 s(-1) and 3.95 GHz at a reduced hole-plasmon frequency value of 6.0 x 10(14) Hz (2.48 eV). The values are promising as they indicate the applicability of Cu2O/In/Cu2O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.
