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Article Citation - WoS: 12Citation - Scopus: 13Performance of the Au/Mgo Photovoltaic Devices(Elsevier Sci Ltd, 2015) Khanfar, H. K.; Qasrawi, A. F.A 100 mu m thick MgO film is used to design a metal semiconductor metal device. The device is characterized by means of current voltage characteristics in the dark and under various light energies in the photon energy range of 3.70-2.15 eV. A photovoltaic effect presented by an open circuit voltage of 0.12-0.47 V. short circuit current density of 3.9-10.5 mu A/cm(2), quantum efficiency of 0.662-0.052, and responsivity of 0.179-0.024 A/W under photoexcitation optical power of 2.2-28.2 mu W is observed. The device was also tested as a UV optical communication component. The test revealed a wide range of tunability and sensitivity for microwave resonant frequencies of 0.5 and 2.9 GHz. The differential resistance of the device exhibited different values at each applied ac signal frequency. When the frequency is fixed, the illuminated to the dark current ratio remained constant for all signal powers in the range of 0.00-20.0 dBm. (C) 2014 Elsevier Ltd. All rights reserved.Article Citation - WoS: 6Citation - Scopus: 6Optical Dynamics of Mgo/Ga4< Interface(Elsevier Science Sa, 2014) Qasrawi, A. F.; Abd-Alrazq, Mariam M.; Gasanly, N. M.A new p-n interface made of p-type MgO as an optical window to the n-type Ga4Se3S crystals is investigated by means of optical reflectance, transmittance and absorbance in the incident light wavelength (k) range of 200-1100 nm. The reflectivity spectral analysis as a function of angle of incidence for MgO, Ga4Se3S and the Ga4Se3S/MgO layers revealed Brewster angles of 75 degrees, 80 degrees and 70 degrees with the corresponding dielectric constants of 13.93, 32.16 and eMgO 7: 55eGa(4)Se(3)S, respectively. To remove Brewster condition of reflection and obtain maximum absorption, the light must be incident from the MgO side. A novel light absorbability is observed. Namely, for all k < 600 nm, the absorbance is dominated by the Ga4Se3S layer. For larger k values, while the crystal absorbance decreases significantly, the bilayer absorbance increased by four times in the visible range and three times in the IR range of spectrum. In the MgO layer, two distinct sets of band tails of the localized states with the widths of 2.30 and 1.26 eV are determined from the absorption spectral analysis. These band tails shift up to 2.32 and 1.44 eV when the interface is constructed. In addition, an indirect energy band gaps (Eg) which are located at 3.10, 2.13 and 1.90 eV for the MgO, Ga4Se3S and the Ga4Se3S/MgO layers, respectively, are determined. The Eg value of the crystal shifts by a 0.23 eV upon bilayer construction. The reflection properties, the band tails, the energy gaps and related shifts make the Ga4Se3S/MgO interface attractive for fabrication of solar cells, narrow barrier resonant tunneling diodes or quantum dots, and as an optical detector for tunable types of lasers. (C) 2013 Published by Elsevier B.V.Article Citation - WoS: 1Citation - Scopus: 1Temperature-Dependent Current-Voltage Characteristics of p-gase0.75< Heterojunction(Springer Heidelberg, 2023) Isik, M.; Surucu, O.; Gasanly, N. M.GaSe0.75S0.25 having layered structure is a potential semiconductor compound for optoelectronics and two-dimensional materials technologies. Optical and structural measurements of the GaSe0.75S0.25 thin film grown on the glass substrate showed that the compound has hexagonal structure and band energy of 2.34 eV. GaSe0.75S0.25 thin film was also grown on the silicon wafer and p-GaSe0.75S0.25/n-Si heterojunction was obtained. To make the electrical characterization of this diode, temperature-dependent current-voltage (I-V) measurements were carried out between 240 and 360 K. Room temperature ideality factor and barrier height of the device were determined from the analyses of I-V plot as 1.90 and 0.87 eV, respectively. Temperature-dependent plots of these electrical parameters showed that the ideality factor decreases from 2.19 to 1.77, while barrier height increases to 0.94 from 0.71 eV when the temperature was increased from 240 to 360 K. The conduction mechanism in the heterojunction was studied considering the Gaussian distribution due to presence of inhomogeneity in barrier height. The analyses presented the mean zero-bias barrier height, zero-bias standard deviation, and Richardson constant.
