Temperature-dependent current-voltage characteristics of <i>p</i>-GaSe<sub>0.75</sub>S<sub>0.25</sub>/<i>n</i>-Si heterojunction

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2023

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Springer Heidelberg

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Electrical-Electronics Engineering
The Department of Electrical and Electronics Engineering covers communications, signal processing, high voltage, electrical machines, power distribution systems, radar and electronic warfare, RF, electromagnetic and photonics topics. Most of the theoretical courses in our department are supported by qualified laboratory facilities. Our department has been accredited by MÜDEK since 2013. Within the scope of joint training (COOP), in-company training opportunities are offered to our students. 9 different companies train our students for one semester within the scope of joint education and provide them with work experience. The number of students participating in joint education (COOP) is increasing every year. Our students successfully completed the joint education program that started in the 2019-2020 academic year and started work after graduation. Our department, which provides pre-graduation opportunities to its students with Erasmus, joint education (COOP) and undergraduate research projects, has made an agreement with Upper Austria University of Applied Sciences (Austria) starting from this year and offers its students undergraduate (Atılım University) and master's (Upper Austria) degrees with 3+2 education program. Our department, which has the only European Remote Radio Laboratory in Foundation Universities, has a pioneering position in research (publication, project, patent).
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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

GaSe0.75S0.25 having layered structure is a potential semiconductor compound for optoelectronics and two-dimensional materials technologies. Optical and structural measurements of the GaSe0.75S0.25 thin film grown on the glass substrate showed that the compound has hexagonal structure and band energy of 2.34 eV. GaSe0.75S0.25 thin film was also grown on the silicon wafer and p-GaSe0.75S0.25/n-Si heterojunction was obtained. To make the electrical characterization of this diode, temperature-dependent current-voltage (I-V) measurements were carried out between 240 and 360 K. Room temperature ideality factor and barrier height of the device were determined from the analyses of I-V plot as 1.90 and 0.87 eV, respectively. Temperature-dependent plots of these electrical parameters showed that the ideality factor decreases from 2.19 to 1.77, while barrier height increases to 0.94 from 0.71 eV when the temperature was increased from 240 to 360 K. The conduction mechanism in the heterojunction was studied considering the Gaussian distribution due to presence of inhomogeneity in barrier height. The analyses presented the mean zero-bias barrier height, zero-bias standard deviation, and Richardson constant.

Description

SURUCU, Özge/0000-0002-8478-1267; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266

Keywords

Schottky diode, Optoelectronics, Solar cell, GaSe, GaS

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0

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Volume

129

Issue

8

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https://doi.org/10.1007/s00339-023-06807-7
 https://hdl.handle.net/20.500.14411/2142

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