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Article Citation - Scopus: 13Carrier Transport Properties of Ins Single Crystals(2002) Qasrawi,A.F.; Gasanly,N.M.The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Carrier Transport Properties of Ins Single Crystals(2002) Qasrawi,A.F.; Gasanly,N.M.The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Carrier Transport Properties of Ins Single Crystals(2002) Qasrawi,A.F.; Gasanly,N.M.The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation - Scopus: 11Cd-Doping Effects on the Properties of Polycrystalline Α-In2se3 Thin Films(2002) Qasrawi,A.F.The X-ray diffraction has revealed that the polycrystalline hexagonal structured α-In2Se3 thin films grown at substrate temperature of 200°C with the unit cell parameters a=4.03°A and c=19.23°A becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00°A and c=16.63°A by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (Iph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which Iph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of Iph on F at low illumination intensities.
