Carrier transport properties of InS single crystals
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Date
2002
Journal Title
Journal ISSN
Volume Title
Publisher
Open Access Color
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Abstract
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
Description
Keywords
Acoustic, InS crystal, Mobility, Polar, Resistivity, Scattering mechanism
Turkish CoHE Thesis Center URL
Fields of Science
Citation
12
WoS Q
Q3
Scopus Q
Q3
Source
Crystal Research and Technology
Volume
37
Issue
10
Start Page
1104
End Page
1112