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Article Citation - WoS: 5Citation - Scopus: 5Identification of Shallow Trap Centers in Inse Single Crystals and Investigation of Their Distribution: a Thermally Stimulated Current Spectroscopy(Elsevier, 2024) Isik, M.; Gasanly, N. M.Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.Article Citation - WoS: 7Citation - Scopus: 7Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/Inse Microwave Sensors(Springer, 2013) Qasrawi, A. F.Amorphous indium selenide thin films have been used in the design of a microwave-sensitive Schottky barrier. The illumination effects on the capacitance spectra, on the signal quality factor, and on the capacitance (C)-voltage (V) characteristics of the Al/InSe/C device are investigated. Particular shifts in the amplitude and in the resonance peaks of the capacitance spectra which were studied in the frequency range of 10.0 kHz to 3.0 GHz are observed. While the photoexcitation of these devices increased the capacity level by similar to 1.6 times the original magnitude, the dark quality factor, which was 2.2 x 10(6) at 3.0 GHz, fell to 1.2 x 10(6) when subjected to luminance of 14.7 klux. Analysis of the C-V curves recorded at signal power ranging from wireless local area network (LAN) levels to the maximum output power of third generation (3G) mobiles reflected high tunability of capacitance upon increasing the voltage or power. The tunability of the biased capacitance was much more pronounced in the light than in the dark. The obtained characteristics of the Al/InSe/C sensors indicate their usability in radio and microwave technology.Article Citation - WoS: 9Citation - Scopus: 8Plasmon Interactions at the (ag, Al)/Inse Thin-Film Interfaces Designed for Dual Terahertz/Gigahertz Applications(Springer, 2017) Al Garni, S. E.; Omar, A.; Qasrawi, A. F.In this article, we investigate the plasmon-dielectric spectral interaction in the Ag/InSe and Al/InSe thin-film interfaces. The mechanism is explored by means of optical absorbance and reflectance at terahertz frequencies and by the impedance spectroscopy at gigahertz frequencies. It was observed that the interfacing of the InSe with Ag and Al metals with a film thickness of 250 nm causes an energy band gap shift that suits the production of thin-film optoelectronic devices. The reflectance and dielectric constant and optical conductivity spectral analysis of these devices displayed the properties of wireless band stop filters at 390 THz. The physical parameters which are computed from the conductivity spectra revealed higher mobility of charge carriers at the Al/InSe interface over that of Ag/InSe. The respective electron-bounded plasmon frequencies are found to be 2.61 and 2.13 GHz. On the other hand, the impedance spectral analysis displayed a microwave resonator feature with series resonance peak position at 1.68 GHz for the Al/InSe/Ag interface. In addition, the temperature-dependent impedance spectra, which were recorded in the temperature range of 300-420 K, revealed no significant effect of temperature on the wave trapping properties of the Al/InSe/Ag interface. The sensitivity of the interfaces to terahertz and gigahertz frequencies nominates it as laser light/microwave traps, which are used in fibers and communications.
