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Article Citation - WoS: 5Citation - Scopus: 5Dispersive Optical Constants of Tl2ingase4< Single Crystals(Iop Publishing Ltd, 2007) Qasrawi, A. F.; Gasanly, N. M.The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band gap of 1.86 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 28.51 and 3.45 eV, 9.26 and 3.04, respectively.Article Citation - WoS: 15Citation - Scopus: 16Electrical Parameters of Al/Inse Rf Sensors(Iop Publishing Ltd, 2014) Qasrawi, A. F.An Al/InSe/C Schottky device is designed on the surface of amorphous InSe thin films. The device is observed to exhibit a switching property at particular biasing voltages. The 'on/off' current ratio is found to be 7.9 and 9.3 at forward and reverse biasing voltages of 2.0 and 2.25 V, respectively. The 'off' and 'on' operational modes are ascribed to the domination of the tunneling of charged particles through a barrier height of 0.83 eV with a depletion region width of 64 nm and due to the domination of the thermionic emission of charged carriers over a barrier height of 0.53 eV, respectively. In addition, the spectral analysis of the capacitance of the device which was carried in the frequency range of 10.0 k-3.0 GHz reflected dc voltage biasing-dependent high quality resonating peaks. The strongest one appeared at a frequency of 36.8 MHz for a biasing voltage of 0.70 V. Furthermore, the loss tangent of the Al/InSe/C device is found to be of the order of 10(-7) at 3.0 GHz. Consistently, the capacitance-voltage spectra of these sensors reflected pronounced tunability up to 100 MHz. The Al/InSe/C device performance, the switching properties and the quality of the resonance peaks indicate the possibility of using these sensors in RF technology.Article Citation - WoS: 20Citation - Scopus: 20Properties of the Pc(4312) pentaquark and its bottom partner(Iop Publishing Ltd, 2021) Azizi, K.; Sarac, Y.; Sundu, H.We present an analysis of the newly observed pentaquark P-c(4312)(+) to shed light on its quantum numbers. To do that, the QCD sum rules approach is used. The measured mass of this particle is close to the Sigma D-++(c)- threshold and has a small width, which supports the possibility of its being a molecular state. We consider an interpolating current in a molecular form and analyze both the positive and negative parity states with spin-. We also consider the bottom counterpart of the state with similar molecular form. Our mass result for the charm pentaquark state supports that the quantum numbers of the observed state are consistent with J(P) = 1/2(-).Article Citation - WoS: 3Citation - Scopus: 3Optoelectronic Properties of Ga4se3< Single Crystals(Iop Publishing Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.; Ilaiwi, K. F.The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).Article Citation - WoS: 5Citation - Scopus: 5Growth and Temperature Tuned Band Gap Characteristics of Nabi(moo4)2< Single Crystal(Iop Publishing Ltd, 2023) Isik, M.; Guler, I; Gasanly, N. M.Structural and optical properties of double sodium-bismuth molybdate NaBi(MoO4)(2) semiconductor compound was investigated by x-ray diffraction, Raman and transmission experiments. From the x-ray diffraction experiments, the crystal that has tetragonal structure was obtained. Vibrational modes of the crystal were found from the Raman experiments. Transmission experiments were performed in the temperature range of 10-300 K. Derivative spectroscopy analysis and absorption spectrum analysis were performed to get information about the change in band gap energy of the crystal with temperature. It was observed that the band gap energies of the crystal at different temperatures obtained from these techniques are well consisted with each other. By the help of absorption spectrum which was obtained from transmission measurements performed at varying temperatures, absolute zero value of the band gap and average phonon energy as 3.03 +/- 0.02 eV and Eph = 24 +/- 0.2 meV, respectively. Moreover, based on absorption spectrum analysis the Urbach energy of the crystal was obtained as 0.10 eV.Article Citation - WoS: 7Citation - Scopus: 7Phase-dependent characteristics of a superconducting junction by using the Schrodinger wave function(Iop Publishing Ltd, 2007) Canturk, M.; Kurt, E.As a macroscopic quantum system, superconducting junction devices are considered both analytically and numerically with the help of the Schrodinger wave equation. Considering the Cooper pair wave function psi in a time-dependent nature, the Hamiltonian of the system is constructed. The phase difference theta is assumed to be a unique independent variable of the superconducting junction in order to evaluate the characteristics of the system. The probability rho(theta) and super current j(theta) densities are determined for different applied voltages V. It is observed that both the amplitude and the period of the wave function psi(theta) have indicated different behaviors as functions of theta for various cases of V. Similarly, rho and j reflect drastic changes. It is shown that numerical results are in good agreement with the analytic results. Our results indicate consistency with some earlier experimental studies for different superconducting devices.Article Citation - WoS: 25Citation - Scopus: 24Preparation of Electrospun Pcl-Based Scaffolds by Mono/Multi-functionalized Go(Iop Publishing Ltd, 2019) Basar, Ahmet Ozan; Sadhu, Veera; Sasmazel, Hilal TurkogluIn the present study, sythetic biodegradable polymer poly(epsilon-caprolactone) (PCL) and graphene oxide (GO) were combined together to prepare 3D, composite tissue scaffolds (PCL/GO scaffolds) by using electrospinning technique. Also, the influence of Gly-Arg-Gly-Asp-Ser-Pro (GRGDSP) and/or thiophene (Th) modified GO on the composite PCL/GO mats (PCL/GO, PCL/GO-GRGDSP, PCL/ GO-Th, PCL/GO-GRGDSP-Th) was further investigated. Characteristic examinations of the scaffolds were carried out by scanning electron microscope (SEM), contact angle (CA) measurements, x-ray photoelectron spectroscopy, TGA, electrical conductivity tests, phosphate buffer saline absorption and shrinkage tests and mechanical tests. All of the scaffolds were exhibited suitable bead free and uniform morphology according to SEM images. With the addition of GO, better hydrophilicity and a slight CA decrease (similar to 5 degrees) for the PCL/GO scaffolds were observed. Mechanical properties were reinforced drastically with the addition and well-dispersion of GO into PCL matrix. The incorporation of PCL and GO exhibited enhanced electrical conductivity and the highest value was found for PCL/GO-GRGDSP-Th (2%) as 15.06 mu S cm(-1). The MG-63 osteoblast cell culture studies (MTT assay, ALP activity, Alizarin-Red staining, fluorescence and SEM analyses) showed that PCL/GO-GRGDSP-Th (1%) scaffolds exhibited the highest biocompatibility performance (1.87 fold MTT absorbance value comparing with neat PCL) due to the advanced properties of GO and the biological interfaces.Article Citation - WoS: 2Citation - Scopus: 2Performance Enhancement of Silicon Photodiodes Through the Integration of Green Synthesized Reduced Graphene Oxide Variants(Iop Publishing Ltd, 2024) Yildiz, D. E.; Sürücü, Özge; Surucu, O.; Balaban, H. Mert; Bilici, I; Yildirim, M.; Sürücü, Özge; Electrical-Electronics Engineering; Electrical-Electronics EngineeringThis study examines the potential of enhancing the optoelectronic properties of silicon photodiodes by producing and analyzing heterostructures that incorporate reduced graphene oxide (rGO) synthesized with silicon using different reduction methods. Graphene oxide (GO) was manufactured utilizing an enhanced Hummers' method. Subsequently, reduced graphene oxides (rGOs) were made by chemical and thermal reduction processes, which are considered ecologically friendly. The use of ascorbic acid to produce ascorbic acid-reduced graphene oxide (ArGO) and thermal processing to produce thermally reduced graphene oxide (TrGO) have significantly contributed to the development of high-performance photodiode technology. The electrical properties were carefully assessed under different levels of light, revealing the substantial impact of integrating reduced graphene oxides (rGOs) on the performance of the diodes. Comparing ArGO/Si, TrGO/Si, and GO/Si heterostructures shows that customized rGO has the potential to greatly influence the responsivity and efficiency of Si-based optoelectronic devices, making a significant contribution to photodiode technology.Article Citation - WoS: 2Citation - Scopus: 2Thermoluminescence Dose Response and Kinetic Parameters of Gd-Doped Zno Nanoparticles(Iop Publishing Ltd, 2024) Isik, M.; Yildirim, T.; Guner, M.; Gasanly, N. M.This study investigates the thermoluminescence (TL) properties of undoped and gadolinium (Gd)-doped zinc oxide (ZnO) nanoparticles synthesized via sol-gel method. The crystal structure of both synthesized nanoparticles was determined as hexagonal from x-ray diffraction pattern. The TL curve of undoped ZnO nanoparticles reveals two distinct peaks at 400.5 and 479.2 K, each associated with trap centers featuring activation energies of 0.84 and 1.05 eV. TL curve of the Gd:ZnO introduced three peaks associated with trap centers at 1.10, 1.18, and 1.25 eV. Notably, the absence of the 0.84 eV trap center in Gd-doped ZnO implies a modification in the defect structure. Considering the effect of Gd-doping on the band structure and potential minor errors in the analysis results, it was stated that the traps at 1.05 and 1.10 eV levels belonged to the same defect center. Dose-dependent investigations for undoped and Gd-doped ZnO nanoparticles reveal linear behaviors in the TL response, highlighting their potential for dosimetric applications. Photoluminescence spectra of both compounds exhibited emission peaks around 455 and 577 nm, which were associated with native defect centers.Article Citation - WoS: 17Citation - Scopus: 16Novel thin films deposited on electrospun PCL scaffolds by atmospheric pressure plasma jet for L929 fibroblast cell cultivation(Iop Publishing Ltd, 2016) Gozutok, M.; Baitukha, A.; Arefi-Khonsari, F.; Sasmazel, H. TurkogluThis paper reports on the deposition of PCL homopolymers and poly epsilon-caprolactone-polyethylene glycol (PCL-PEG) copolymers by atmospheric pressure plasma jet (APPJ) onto electrospun PCL scaffolds for improving L929 fibroblast cell growth. Polymer deposited scaffolds showed better stability as well as lower CA as compared to those treated with APPJ in Ar alone used as the carrier gas to introduce the precursors due to the formation of polar groups generated during the plasma treatment, such as -OH and/or -COO. Average fiber and porosity sizes were calculated by using SEM photographs and the ImageJ Launcher Software program and higher values were observed for both PCL and PCL-PEG deposited scaffolds than the untreated electrospun PCL scaffolds. XPS analysis showed that C1s% content decreased for PCL deposited (from 82.4% to 71.0%) and PCL-PEG deposited (from 82.4% to 57.7%) and O1s% composition increased for PCL deposited (from 17.6% to 29.0%) and PCL-PEG deposited (from 17.6% to 42.3%) compared to the untreated one. XPS results proved more incorporation of oxygen moieties on the deposited surfaces than the untreated samples giving rise to more hydrophilic surfaces to the deposited ones. Standard in vitro MTT test, Giemsa staining, fluorescence and CLSM imaging techniques were used for the determination of cell viability, adhesion and proliferation. Cell culture experiments showed that PCL-PEG deposited electrospun PCL scaffolds had the most promising cell adhesion, proliferation and growth among the treated scaffolds. The increased average fiber diameter caused by deposition as well as oxygen containing polar groups formed on the surfaces due to the radicals present in the plasma atmosphere provided higher surface area and functionality, respectively, for cells to attach, yielding better biocompatibility performance.
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