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Article Citation - WoS: 9Citation - Scopus: 9TL and TSC studies on TlGaSe2 layered single crystals(Elsevier, 2013) Isik, M.; Bulur, E.; Gasanly, N. M.Defects in - as grown - TlGaSe2 layered single crystals were investigated using Thermoluminescence (TL) and Thermally Stimulated Currents (TSC) techniques in the temperature range 10-300 K. TL and TSC curves of samples illuminated using a light with energy greater than the band gap of the material, i.e. blue light (similar to 470 nm) at 10 K, exhibited peaks around 27 and 28 K, respectively, when measured by heating up the samples at a rate of 1 K/s. TL and TSC curves were analyzed to characterize the defects responsible for the peaks. Both TL and TSC peaks were observed to be obeying first order kinetics. Thermal activation energies of the peaks were determined using various methods: curve fitting, initial rise, peak shape and different heating rates. For both TL and TSC peaks, thermal activation energy was determined as around 8 meV, implying that they may originate from similar kinds of trapping centers. A distribution of traps (in terms of energy) was experimentally verified by illuminating the sample at different temperatures and measuring the TL curves. As a result of this, the apparent thermal energies were observed to be shifted from similar to 8 to similar to 17 meV by increasing the illumination temperature from 10 to 16 K. (C) 2013 Elsevier B.V. All rights reserved.Article Citation - WoS: 8Citation - Scopus: 8Study of Vibrational Modes in (ga2s3< - (ga2se3< Mixed Crystals by Raman and Infrared Reflection Measurements(Elsevier, 2019) Isik, M.; Guler, I.; Gasanly, N. M.Raman and infrared (IR) reflection characteristics were investigated in the frequency region of 100-450 cm(-1) for (Ga2S3)(x) - (Ga2Se3)(1-x) mixed crystals for compositions of x increasing from 0.0 to 1.0 by intervals of 0.25 obtained by Bridgman crystal growth technique. In the Raman spectra of these crystals four dominant peak features were observed while two bands were detected in the IR spectra of interest samples. Kramers-Kronig dispersion relations applied to IR spectra presented the frequencies of transverse optical modes. The compositional dependencies of revealed Raman- and IR-active mode frequencies on (Ga2S3)(x) - (Ga2Se3)(1-x) crystals were established. One-mode behavior was displayed from indicated dependencies.Article Citation - WoS: 8Citation - Scopus: 8The Investigation of Electronic Nature and Mechanical Properties Under Spin Effects for New Half-Metallic Ferromagnetic Chalcogenides Ag3crx4< (x = S, Se, and Te)(Elsevier, 2021) Erkisi, Aytac; Yildiz, Bugra; Wang, Xiaotian; Isik, Mehmet; Ozcan, Yusuf; Surucu, GokhanThis study presents the electronic and mechanical characteristics of ternary silver-based Ag3CrX4 (X = S, Se, and Te) chalcogenides having simple cubic crystalline structure (SC), conforming P4-3m (space group: 215) that are studied under the spin-polarized Generalized Gradient Approach (GGA) within the framework of the Density Functional Theory (DFT). The stable magnetic phase has been determined as the ferromagnetic (FM) phase for all studied systems. Then, phase stability, mechanical, thermal and electronic characteristics of Ag3CrX4 chalcogenides have been reported. In the calculated spin polarized electronic band structures for Ag3CrX4 chalcogenides, as an indicator of half-metallic behavior, metallicity has been observed in the majority spin channel, while indirect band gaps (1.04 eV for Ag3CrS4, 1.10 eV for Ag3CrSe4, and 1.25 eV for Ag3CrTe4) have been determined in the minority spin channel. Moreover, Ag3CrX4 chalcogenides have been found as thermodynamically stable and structurally synthesizable considering the calculated negative formation enthalpies. Elastic constants of studied chalcogenides satisfying Born-Huang criteria's pointed out the mechanical stability of materials. The predicted mechanical properties determined with elastic constants revealed that Ag3CrX4 chalcogenides belong to soft and ductile material family.
