2 results
Search Results
Now showing 1 - 2 of 2
Article Citation - WoS: 4Citation - Scopus: 4Characterization of the Ge/Bi2< Interfaces(Univ Fed Sao Carlos, dept Engenharia Materials, 2019) Alharbi, Seham Reef; Qasrawi, Atef FayezIn this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.Article Citation - WoS: 3Citation - Scopus: 4Au/As2< Schottky Barriers Designed as Multifunctional Devices(Ieee-inst Electrical Electronics Engineers inc, 2020) Al Harbi, S. R.; Qasrawi, A. F.In this article, Au/As2Se3/Ag/As2Se3/Yb Schottky barriers are formed and characterized. The devices prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit metal-induced crystallization process when coated onto Au substrates. Electrically, the arsenic selenide-based Schottky devices exhibited typical metal-oxide-semiconductor (MOS) characteristics with a built-in potential of 0.17 eV. The device shows resonance-antiresonance switching, negative capacitance (NC) effect, and high to low conductance switching features in the frequency domain of 10-1800 MHz. In addition, measurement of the impedance, amplitude of reflection coefficient, return loss (L-r), and voltage standing wave ratio (VSWR) spectra in the same domain have shown that the Au/As2Se3/Ag/As2Se3/Yb Schottky barriers display band stop features at 1180 MHz. The L-r and VSWR values at this critical frequency are 29.1 dB and 1.1, respectively. The electrical characterizations of the Au/As2Se3/Ag/As2Se3/Yb MOS devices have confirmed their suitability for use as parasitic capacitance cancellers, noise reducers, and as switching clock with selective switching time scales of switching delay time less than 0.40 ns.
