6 results
Search Results
Now showing 1 - 6 of 6
Conference Object Citation - WoS: 2Citation - Scopus: 4Influence of Boron And/Or Zirconium Doping on Morphology and Optical Properties of Titania(Tanger Ltd, 2011) Kapusuz, Derya; Park, Jongee; Ozturk, Abdullah; Metallurgical and Materials EngineeringSol-gel derived B (boron) and Zr (zirconium) doped TiO2 (Titania) nanoparticles were synthesized. Microstructural, photocatalytic and crystallographic properties of the doped particles were investigated. Highest photocatalytic activity was achieved by 10 wt% Zr doping. 5 wt% doping was the optimum value for effective B doping. B ions were found to form oxygen vacancies behaving as interstitial defects whereas Zr ions substituted Ti4+ ions in the lattice.Article Citation - WoS: 2Citation - Scopus: 2Thermoluminescence Dose Response and Kinetic Parameters of Gd-Doped Zno Nanoparticles(Iop Publishing Ltd, 2024) Isik, M.; Yildirim, T.; Guner, M.; Gasanly, N. M.This study investigates the thermoluminescence (TL) properties of undoped and gadolinium (Gd)-doped zinc oxide (ZnO) nanoparticles synthesized via sol-gel method. The crystal structure of both synthesized nanoparticles was determined as hexagonal from x-ray diffraction pattern. The TL curve of undoped ZnO nanoparticles reveals two distinct peaks at 400.5 and 479.2 K, each associated with trap centers featuring activation energies of 0.84 and 1.05 eV. TL curve of the Gd:ZnO introduced three peaks associated with trap centers at 1.10, 1.18, and 1.25 eV. Notably, the absence of the 0.84 eV trap center in Gd-doped ZnO implies a modification in the defect structure. Considering the effect of Gd-doping on the band structure and potential minor errors in the analysis results, it was stated that the traps at 1.05 and 1.10 eV levels belonged to the same defect center. Dose-dependent investigations for undoped and Gd-doped ZnO nanoparticles reveal linear behaviors in the TL response, highlighting their potential for dosimetric applications. Photoluminescence spectra of both compounds exhibited emission peaks around 455 and 577 nm, which were associated with native defect centers.Article Citation - WoS: 5Citation - Scopus: 6Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor(Wiley-v C H verlag Gmbh, 2003) Kayed, TSLithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 6Citation - Scopus: 8Temperature and Magnetic Field Effects on the Carrier Density and Hall Mobility of Boron-Doped Tl-Ba Superconductor(Elsevier Science Sa, 2005) Kayed, TS; Qasrawi, AFBoron-doped T1-based superconductor was prepared by adding an amount of 1 wt.% B to the Tl1.8Ba2Ca2.2Cu3Ox, compound. The usual solid-state reaction method has been applied under optimum conditions. The X-ray data of the sample show a tetragonal structure with a high ratio of T1-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 120 K. The magnetic field and temperature effects on the normal state electrical resistivity, carrier density, and Hall mobility have been investigated. Both temperature and magnetic field significantly affect the resistivity behavior. The zero field resistivity was found to vary exponentially with temperature with a slope revealing activation energy of 27.5 meV. When the magnetic field is applied, the resistivity varied up-normally in the temperature region of 160-240 K. The temperature dependent carrier concentration calculated from the Hall coefficient data varied linearly with the applied magnetic field. This effect was attributed to the increase in the hole effective mass upon field increment. The temperature-dependent carrier concentration data at several applied fields were analyzed by the single donor-single acceptor model to obtain the values of effective masses. The temperature and magnetic field dependent normal state Hall mobility was found to be limited by the scattering of acoustic phonons. (c) 2005 Elsevier B.V. All rights reserved.Article Citation - WoS: 34Synthesis and Characterization of Fluorine-Substituted Polyanilines(Pergamon-elsevier Science Ltd, 2001) Cihaner, A; Önal, AMPoly(2-fluoroaniline), P2FAN, poly(3-fluoroaniline). P3FAN. and poly(4-fluoroaniline), P4FAN, have been synthesized from fluorine substituted aniline monomers in aqueous acidic medium using potassium dichromate as oxidizing agent. Characterization of polymer products has been carried out using FTIR, and NMR spectroscopic techniques. Thermal analysis of polyfluoroaniline powders was also investigated using differential scanning calorimetry and thermogravimetric analysis. To compare the structural properties of the polymers, polyfluoroanilines were also synthesized using ammonium peroxydisulfate as oxidizing agent. Polyfluoroanilines synthesized by chemical oxidation were doped by using iodine and the change in the paramagnetic behavior was monitored by electron spin resonance spectroscopy. (C) 2001 Elsevier Science Ltd. All rights reserved.Article Citation - WoS: 6Citation - Scopus: 7Characteristic Features of Thermoluminescence in Neodymium-Doped Gallium Sulfide(Wiley, 2018) Guler, I.; Isik, M.; Ahmedova, F.; Guseinov, A.; Gasanly, N.The thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed that one of the observed peaks showed normal behavior according to the one trap-one recombination model, whereas the other model showed anomalous heating rate behavior. TL experiments were also carried out at different illumination temperatures from 10 to 32 K; maximum peak temperature remained almost the same at various illumination temperatures. This behavior indicated that the revealed trapping centers are single, discrete levels. The TL glow curves of undoped GaS crystals were also investigated and the effect of Nd doping on the TL characteristics of crystals is discussed in the manuscript.
