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  • Article
    Citation - WoS: 21
    Citation - Scopus: 21
    The Role of Defects on the Transition From Saturable Absorption To Nonlinear Absorption of Bi12geo20< Single Crystal Under Increasing Laser Excitation
    (Elsevier, 2022) Pepe, Yasemin; Isik, Mehmet; Karatay, Ahmet; Yildiz, Elif Akhuseyin; Gasanly, Nizami; Elmali, Ayhan
    This work reports defect and input intensity dependent nonlinear optical behaviors of Bi12GeO20 (BGO) single crystal. Open aperture (OA) Z-scan experiments were performed with 532 nm excitation wavelength under 4 ns and 100 fs pulsed laser irradiation. Obtained data were fitted with a theoretical model considering one-photon, two-photon and free carrier absorption contributions to nonlinear absorption due to longer lifetime of localized defect states than that of used laser pulse durations. At low input intensities, the BGO single crystal showed saturable absorption (SA) behavior and transition to nonlinear absorption (NA) behavior observed with further increase of the input intensities both of pulse durations. At low input intensity, the OPA mechanism is dominant and results in SA by filling of the defect states due to defect state at around one photon energy (2.32 eV). At higher input intensity, multi-photon, two-photon and free carrier absorption become dominant mechanisms, and nonlinear absorption behavior was observed. The lowest saturation threshold was found as 1.36 x 1010 W/cm2 with nanosecond pulses. We have revealed the mechanisms contributing both SA and NA, and determined saturation intensity threshold and effective nonlinear absorption coefficients. Our findings indicate that the tails of defect states overlap in the energy band gaps especially in sufficiently disordered crystal. With this way, the spectral range for saturable absorption and nonlinear absorption can be broadened.
  • Article
    Citation - WoS: 24
    Citation - Scopus: 23
    Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the Tlinsse and Tl2in2< Crystals in Near-Infrared Optical Limiting Applications
    (Amer Chemical Soc, 2024) Dogan, Anil; Karatay, Ahmet; Isik, Mehmet; Yildiz, Elif Akhuseyin; Gasanly, Nizami Mamed; Elmali, Ayhan
    The present study represents the effect of defect states on the nonlinear absorption and optical limiting performances of TlInSSe and Tl2In2S3Se single crystals with near-infrared excitations. The band gap energies were 2.2 and 2.22 eV, and the Urbach energies were 0.049 and 0.034 eV for TlInSSe and Tl2In2S3Se, respectively. The trapping time of localized defect states was found to be 8 ns by femtosecond transient absorption measurements. The analysis of open-aperture Z-scan data depends on two different fitting models to determine the effect of defect states on the nonlinear absorption (NA) properties of the studied crystals. Model 1 only considers two-photon absorption (TPA), while model 2 includes one-photon absorption (OPA), TPA, and free carrier absorption (FCA). The NA coefficients (ss(eff)) obtained from model 2 are higher than the values (ss) obtained from model 1 at the same intensities, revealing that defect states contribute to NA through OPA. The optical limiting properties of the TlInSSe and Tl2In2S3Se crystals were examined under 1064 nm wavelength excitation. The limiting thresholds were found to be 1.16 and 0.27 mJ/cm(2) at 29.8 GW/m(2) and 99.5 GW/m(2) input intensities, respectively. The results show that TlInSSe and Tl2In2S3Se crystals have promising potential for near-infrared optical limiting applications.