Revealing the Effects of Defect States on the Nonlinear Absorption Properties of the Tlinsse and Tl<sub>2</Sub>in<sub>2< Crystals in Near-Infrared Optical Limiting Applications
Loading...
Date
2024
Journal Title
Journal ISSN
Volume Title
Publisher
Amer Chemical Soc
Open Access Color
OpenAIRE Downloads
OpenAIRE Views
Abstract
The present study represents the effect of defect states on the nonlinear absorption and optical limiting performances of TlInSSe and Tl2In2S3Se single crystals with near-infrared excitations. The band gap energies were 2.2 and 2.22 eV, and the Urbach energies were 0.049 and 0.034 eV for TlInSSe and Tl2In2S3Se, respectively. The trapping time of localized defect states was found to be 8 ns by femtosecond transient absorption measurements. The analysis of open-aperture Z-scan data depends on two different fitting models to determine the effect of defect states on the nonlinear absorption (NA) properties of the studied crystals. Model 1 only considers two-photon absorption (TPA), while model 2 includes one-photon absorption (OPA), TPA, and free carrier absorption (FCA). The NA coefficients (ss(eff)) obtained from model 2 are higher than the values (ss) obtained from model 1 at the same intensities, revealing that defect states contribute to NA through OPA. The optical limiting properties of the TlInSSe and Tl2In2S3Se crystals were examined under 1064 nm wavelength excitation. The limiting thresholds were found to be 1.16 and 0.27 mJ/cm(2) at 29.8 GW/m(2) and 99.5 GW/m(2) input intensities, respectively. The results show that TlInSSe and Tl2In2S3Se crystals have promising potential for near-infrared optical limiting applications.
Description
Keywords
[No Keyword Available]
Turkish CoHE Thesis Center URL
Fields of Science
Citation
WoS Q
Q1
Scopus Q
Q2