3 results
Search Results
Now showing 1 - 3 of 3
Article Citation - WoS: 4Citation - Scopus: 4Growth and Optical Characterization of Sn0.6sb0.4< Layer Single Crystals for Optoelectronic Applications(Elsevier Sci Ltd, 2022) Bektas, T.; Terlemezoglu, M.; Surucu, O.; Isik, M.; Parlak, M.SnSe compound is an attractive semiconductor material due to its usage in photovoltaic applications. The sub-stitution of Sb in the SnSe compound presents a remarkable advantage especially in point of tuning optical characteristics. The present paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. To the best of our knowledge, this work is the first investigation of the Sn0.6Sb0.4Se crystal grown with the vertical Bridgman technique. X-ray diffraction (XRD) pattern of the grown crystal indicated the well crystalline structure of the grown crystals. Lattice strain and interplanar spacing of the crystal structure were determined using the XRD pattern. Scanning electron micro-scope images allowed to the observation of the layer crystal structure. The layer crystalline structure shows 2D material properties and provides 2D applications. Optical properties were revealed by carrying out Raman, ellipsometry and transmission measurements. Raman modes, refractive index, extinction coefficient, and dielectric spectra, band gap energy of the crystal were presented throughout the paper. The obtained results indicated that Sn1-xSbxSe (x = 0.4) layer single crystals may be an alternative potential for photovoltaic and optoelectronic applications.Article Citation - WoS: 20Citation - Scopus: 24Temperature Dependence of Band Gaps in Sputtered Snse Thin Films(Pergamon-elsevier Science Ltd, 2019) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge.Article Citation - WoS: 5Citation - Scopus: 5Improvement of Electrical Characteristics of Snse/Si Heterostructure by Integration of Si Nanowires(Elsevier, 2021) Coskun, E.; Gullu, H. H.; Emir, C.; Parlak, M.In this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Omega, and 3.71, 1.57 x 10(3) Omega, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure.
