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  • Article
    Citation - WoS: 11
    Citation - Scopus: 12
    Structural, optical, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-xNixO6.92-3x/2 solid solution
    (Taylor & Francis Ltd, 2012) Qasrawi, A. F.; Nazzal, E. M.; Mergen, A.
    The effects of Ni content on the structural, optical, dielectric and electrical properties of Bi1.5Zn0.92Nb1.5O6.92 pyrochlore ceramics have been investigated. Nickel atoms were inserted into pure samples in accordance to the composition Bi1.5Zn0.92Nb1.5-xNixO6.92-3x/2, with x varying from 0.07 to 0.40. The structural analysis revealed that a single phase of the pyrochlore compound can be obtained for x values of 0.07 and 0.10 only. Further increase in Ni caused the appearance of multiple phases. The optical energy band gaps are determined as 3.30, 3.35 and 3.52 eV for Ni content of 0.00, 0.07 and 0.10 respectively. The temperature dependent electrical resistivity and the frequency dependent capacitance are observed to increase with increasing Ni content. The resonance frequency, which was determined from the capacitance-frequency dependence, was observed to shift from 12.14 to 10.47 kHz as the x values increase from 0.00 to 0.10 respectively.
  • Article
    Citation - WoS: 17
    Citation - Scopus: 19
    Synthesis and Characterization of Bi1.5zn0.92< Pyrochlore Ceramics
    (Elsevier Sci Ltd, 2012) Qasrawi, A. F.; Kmail, Bayan H.; Mergen, A.
    The morphological, compositional, structural, dielectric and electrical properties of Bi1.5Zn0.92Nb1.5-xSnxO6.92-x/2 ceramics have been investigated by means of scanning electron microscopy (SEM), X-ray energy dispersion spectroscopy (EDS), X-ray diffraction (XRD), temperature and frequency dependent dielectric constant and temperature dependent conductivity measurements for Sn-contents in the range of 0.00 <= x <= 0.60. It was shown that single phase of the pyrochlore ceramics can only be obtained for x <= 0.25. Above this value a ZnO phase appeared in the XRD patterns and SEM micrographs as well. An increase in the lattice constant and in the temperature coefficient of dielectric constant and a decrease in the dielectric constant values with increasing Sn content was observed for the ceramics which exhibited a single phase formation. A temperature dependent but frequency invariant dielectric constant was observed for this type of ceramics. The lowest electrical conductivity and highest dielectric constant was observed for the sample which contains 0.06 Sn. The Bi1.5Zn0.92Nb1.5-xSnxO6.92-x/2 pyrochlore ceramic conductivities are thermally active above 395 K. For temperatures greater than 395 K, the conductivity activation energy which was found to be 0.415 eV for the pure sample increased to 1.371 eV when sample was doped with 0.06 Sn. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Effect of Ionic Substitution on the Structural, Dielectric and Electrical Properties of Bismuth Zinc Niobate Ceramics
    (Korean Assoc Crystal Growth, inc, 2012) Qasrawi, A. F.; Abu Je'ib, Hussein A.; Mergen, A.; Department of Electrical & Electronics Engineering
    The effects of tin substitution on the structural, dielectric and electrical properties of the Bi1.5Zn0.92Nb1.5O6.92 pyrochlore ceramics have been investigated. Tin atoms was substituted in the A (Bi1.5Zn0.46)-site instead of zinc and in the B ((Zn0.46Nb1.5)-site instead of niobium in accordance to the chemical formulae Bi1.5Zn0.92Nb1.5-xO6.92-x/2 and (Bi1.5-x/3Zn0.46-3x/2Snx)(Nb1.5Zn0.46)O-6.92, for 0.00 <= x <= 0.40 and 0.00 <= x <= 0.60, respectively. A relative single phase formation of the structures was possible for x values less than 0.25 and less than 0.10. Pronounced tunability in the dielectric constant values associated with very low dielectric loss are obtainable by Sn substitution. Furthermore, a frequency invariant but linearly varying temperature dependent dielectric constant is observed. The electrical conductivity decreased by two and one order of magnitude for the A and B-site substitutions, respectively. The temperature-dependent conductivity analysis in the temperature region of 300-500 K, reflected the existence of shallow and deep impurity energy levels being created by the doping process.
  • Article
    Citation - WoS: 8
    Citation - Scopus: 10
    Structural, Electrical and Dielectric Properties of Bi1.5zn0.92< Pyrochlore Ceramics
    (Elsevier Sci Ltd, 2012) Qasrawi, A. F.; Mergen, A.
    The micro-structural, compositional, temperature dependent dielectric and electrical properties of the Bi1.5Zn0.92Nb1.5-xTaxO6.92 solid solution has been investigated. The increasing Ta content from 0.2 to 1.5 caused; single phase formation, a pronounced grain size reduction from similar to 7.0 to 2.5 mu m, sharp decrease in the dielectric constant from 198 to 88 and an increase in the electrical conductivity from 3.16 x 10(-10) to 5.0 x 10(-9) (Omega cm)(-1), respectively. The temperature dependent dielectric constant which is found to be frequency invariant in the frequency range of (0.0-2.0 MHz) exhibited a sharp change in the temperature coefficient of dielectric constant at a (doping independent) critical temperature of 395 K. The analysis of the measured data reflects a promising future for this type of pyrochlore to be used in high voltage passive device applications. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Cobalt Doping Effects on the Mechanical and Electrical Parameters of Bi1.5zn0.92< Solid Solution
    (indian Ceramic Soc, 2014) Qasrawi, A. F.; Jaradat, Haneen N. M.; Mergen, A.
    The cobalt doping effects on the lattice constant, strain, grain size, dislocation density and electrical conduction are investigated by means of X-ray diffraction and electrical resistivity measurements on the Bi1.5Zn0.92Nb1.5-xCoxO6.92-x (x=0.03-0.20) ceramics, respectively. Increasing cobalt content sharply increases compressing strain and dislocation density and decreases both the lattice constant and the grain size of the pyrochlore. At a doping content of 0.05 new minor phase of ZnO appears. The ZnO grains increase with increasing cobalt content. When the cobalt doping is repeated in accordance with the formula Bi1.5Zn0.92Nb1.5-xCoxO6.92-x, a single phase pyrochlore is obtained with cobalt content up to 0.10. The electrical resistivity analysis reflects increasing activation energy with increasing cobalt content. The cobalt creates an impurity level in the energy gap of the pyrochlore that shifts towards the mid gap converting the extrinsic nature of conductivity to intrinsic at a cobalt content of 0.10.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Investigation of the Physical Properties of Bi1.5-xcdx< Pyrochlore Ceramics
    (Springer, 2013) Qasrawi, A. F.; Kmail, Bayan H.; Nazzal, Eman M.; Mergen, A.
    For the purpose of dielectric parameters tuning Bi1.5Zn0.92Nb1.5O6.92 (BZN) pyrochlore ceramics were subject to cadmium doping in accordance to the chemical formula; Bi1.5-xCdxZn0.92Nb1.5O6.92-x/2 for 0.10 a parts per thousand currency sign x a parts per thousand currency sign 0.50. The main physical properties of the doped samples were investigated by means of X-ray diffraction, scanning electron microscopy associated with energy dispersion spectroscopy, temperature dependent dielectric constant and temperature dependent electrical resistivity to obtain the crystalline structure, the lattice parameter, the relative density, the surface morphology and chemical composition. Optimization of single phase Cd doped samples were possible for x a parts per thousand currency signaEuro parts per thousand 0.14, beyond this limit, ZnO and Zn3Nb2O8 minor phases grow through the structure of the BZN. For samples which exhibit single BZN phase, the dielectric constant, the electrical resistivity and the resistivity activation energy increased with increasing Cd content. The maximum obtainable dielectric constant as 259 and 224 with high signal quality factor of 690 and 1090 at 25 and 200 A degrees C, respectively, was for the sample doped with 0.14 Cd. These values are promising for implantation of BZN in RF and microwave technology as a resonator with high quality signal.