Effect of Ionic Substitution on the Structural, Dielectric and Electrical Properties of Bismuth Zinc Niobate Ceramics

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Date

2012

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Korean Assoc Crystal Growth, inc

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The effects of tin substitution on the structural, dielectric and electrical properties of the Bi1.5Zn0.92Nb1.5O6.92 pyrochlore ceramics have been investigated. Tin atoms was substituted in the A (Bi1.5Zn0.46)-site instead of zinc and in the B ((Zn0.46Nb1.5)-site instead of niobium in accordance to the chemical formulae Bi1.5Zn0.92Nb1.5-xO6.92-x/2 and (Bi1.5-x/3Zn0.46-3x/2Snx)(Nb1.5Zn0.46)O-6.92, for 0.00 <= x <= 0.40 and 0.00 <= x <= 0.60, respectively. A relative single phase formation of the structures was possible for x values less than 0.25 and less than 0.10. Pronounced tunability in the dielectric constant values associated with very low dielectric loss are obtainable by Sn substitution. Furthermore, a frequency invariant but linearly varying temperature dependent dielectric constant is observed. The electrical conductivity decreased by two and one order of magnitude for the A and B-site substitutions, respectively. The temperature-dependent conductivity analysis in the temperature region of 300-500 K, reflected the existence of shallow and deep impurity energy levels being created by the doping process.

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Mixing, Composites, X-ray methods, Electrical properties, Dielectric properties

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Q3

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Q3

Source

Journal of Ceramic Processing Research

Volume

13

Issue

4

Start Page

446

End Page

450

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