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Defect Characterization of Ga₄se_{3< Layered Single Crystals by Thermoluminescence}
(indian Acad Sciences, 2016) Isik, M.; Delice, S.; Gasanly, N.
Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K/s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.
Citation - WoS: 1
Citation - Scopus: 1
Growth and Optical Properties of (na_0.5bi_{0.5< (x=0.25) Single Crystal: a Potential Candidate for Optoelectronic Devices}
(Springer, 2024) Guler, I.; Isik, M.; Gasanly, N.
Double tungstates (DT) and double molybdates (DM) have significant importance because of their optoelectronic applications. Regarding the importance of DT and DM, we investigated experimentally structural and optical properties of (Na0.5Bi0.5)(Mo1-xWx)O-4 (x = 0.25) crystal that belongs to the NaBi-DT and DM crystals group. Czochralski method was used to grow the single crystals. The structure of the crystal was identified using X-ray diffraction (XRD) measurements. Two sharp peaks associated with tetragonal crystal structure appeared in the pattern. Vibrational modes of the studied crystal were obtained from the Raman experiments. By the help of the Fourier transform infrared spectrophotometer (FTIR) measurements, infrared transmittance spectrum of the studied compound was recorded. Band gap energy wase found around 3.04 eV using two methods, Tauc and derivative analysis, based on transmission spectrum. Based on the analysis of absorption coefficient, Urbach energy was obtained as 0.22 eV. The revealed structural and optical properties of the crystal indicated that the material may be a candidate for optoelectronic devices in which NaBi(MoO4)(2) and NaBi(WO4)(2) materials are utilized.
Citation - WoS: 5
Citation - Scopus: 5
Low-Temperature Thermoluminescence in Layered Structured Ga_0.75in_{0.25< Single Crystals}
(Elsevier Science Sa, 2012) Isik, M.; Bulur, E.; Gasanly, N. M.
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels. (C) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 13
Citation - Scopus: 14
Linear and Nonlinear Optical Properties of Bi12geo20 Single Crystal for Optoelectronic Applications
(Elsevier Sci Ltd, 2023) Isik, M.; Gasanly, N. M.
The present paper aims at presenting linear and nonlinear optical properties of Bi12GeO20 single crystals grown by Czochralski method. Transmission and reflection measurements were performed in the 400-1000 nm region. The recorded spectra were analyzed considering well-known optical models. Spectral dependencies of absorption coefficient, skin depth, refractive index, real and imaginary components of dielectric function were presented. The analyses performed on absorption coefficient showed direct bandgap and Urbach energies as 2.56 and 0.22 eV, respectively. The first-and third-order nonlinear susceptibilities and nonlinear refractive index of the crystal were also reported in the present work. The results of the present paper would provide valuable information for optoelectronic device applications of Bi12GeO20.
Citation - WoS: 23
Citation - Scopus: 25
Investigation of Optical Properties of Bi₁₂geo_{20< Sillenite Crystals by Spectroscopic Ellipsometry and Raman Spectroscopy}
(Elsevier Sci Ltd, 2020) Isik, M.; Delice, S.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.
Bi12GeO20 (BGO) compound is one of the fascinating members of sillenites group due to its outstanding photorefractive and photocatalytic characteristics. The present paper aims at investigating optical properties of BGO crystals by means of spectroscopic ellipsometry and Raman spectroscopy measurements. Bi12GeO20 single crystals grown by Czochralski method were structurally characterized by X-ray diffraction (XRD) experiments and the analyses showed that studied crystals have cubic crystalline structure. Raman spectrum exhibited 15 peaks associated with A, E and F modes. Spectroscopic ellipsometry measurement data achieved in the energy region between 1.2 and 6.2 eV were used in the air/sample optical model to get knowledge about complex pseudodielectric constant, pseudorefractive index, pseudoextinction and absorption coefficients of the crystals. Spectral change of real and imaginary part of complex pseudodielectric constant were discussed in detail. Band gap energy of Bi12GeO20 single crystals was calculated to be 3.18 eV using absorption coefficient dependency on photon energy. Critical point energies at which photons are strongly absorbed were determined by utilizing the second energy derivative spectra of components of complex pseudodielectric function. Fitting of both spectra resulted in the presence of four interband transitions with energies of 3.49, 4.11, 4.67 and 5.51 eV.
Citation - WoS: 6
Citation - Scopus: 5
Growth and Characterization of Pbmo0.75w0.25o4 Single Crystal: a Promising Material for Optical Applications
(Elsevier Science Sa, 2023) Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.
The present paper reports the structural and optical properties of PbMo0.75W0.25O4 single crystals grown by Czochralski method. XRD pattern of the crystal indicated well-defined two diffraction peaks associated with tetragonal crystalline structure. Raman and infrared spectra of the grown single crystals were presented to get information about the vibrational characteristics. Observed Raman modes were associated with modes of PbMoO4 and PbWO4. Eight bands were revealed in the infrared spectrum. The bands observed in the spectrum were attributed to multiphonon absorption processes. Transmission spectrum was measured in the 375-700 nm spectral region. The analyses of the spectrum resulted in direct band gap energy of 3.12 +/- 0.03 eV. The compositional dependent band gap energy plot was drawn considering the reported band gap energies of PbMoO4, PbWO4 and revealed band gap of PbMo0.75W0.25O4 single crystal. An almost linear behavior of composition-band gap energy was seen for PbMo1-xWxO4 compounds. Urbach energy was also found from the absorption coefficient analysis as 0.082 +/- 0.002 eV.
Citation - WoS: 5
Citation - Scopus: 5
Absorption Edge and Optical Constants of Tl₂ga_{2< Crystals From Reflection and Transmission, and Ellipsometric Measurements}
(Elsevier, 2012) Isik, M.; Gasanly, N. M.
The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies. Spectroscopic ellipsometry measurements on Tl2Ga2S3Se crystals were carried out on the layer-plane (0 0 1) surfaces with light polarization E perpendicular to c* in the 1.20-4.70 eV spectral range at room temperature. The real and imaginary parts of the dielectric function as well as refractive and absorption indices were found as a result of analysis of ellipsometric data. The Wemple-DiDomenico single-effective-oscillator model was used to study the dispersion of the refractive index in the below band gap energy range. The structures of critical points have been characterized from the second derivative spectra of the dielectric function. The analysis revealed four interband transition structures with 3.14, 3.40, 3.86 and 4.50 eV critical point energies. (C) 2012 Elsevier B.V. All rights reserved.
Citation - WoS: 5
Citation - Scopus: 5
Determination of Trapping Parameters of Thermoluminescent Glow Peaks of Semiconducting Tl₂ga_{2< Crystals}
(Pergamon-elsevier Science Ltd, 2015) Isik, M.; Yildirim, T.; Gasanly, N. M.
Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature. (C) 2015 Elsevier Ltd. All rights reserved.
Citation - WoS: 5
Citation - Scopus: 5
Identification of Shallow Trap Centers in Inse Single Crystals and Investigation of Their Distribution: a Thermally Stimulated Current Spectroscopy
(Elsevier, 2024) Isik, M.; Gasanly, N. M.
Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.
Citation - WoS: 8
Citation - Scopus: 9
Electronic, Optical and Thermodynamic Characteristics of Bi12sio20 Sillenite: First Principle Calculations
(Elsevier Science Sa, 2021) Isik, M.; Surucu, G.; Gencer, A.; Gasanly, N. M.
Bi12XO20 (X: Si, Ge, Ti) ternary semiconducting compounds are known as sillenites and take a remarkable attention thanks to their attractive photorefractive properties. The present paper reports electronic, optical and thermodynamic characteristics of Bi12SiO20 by means of density functional theory (DFT) calculations. The crystalline structure of the compound was revealed as cubic with lattice constant of 10.135 angstrom. XRD pattern obtained from DFT calculations were compared with experimental data and there is a good consistency between them. The electronic band structure and density of state plots were presented in detail. The band gap energy of the compound was determined from electronic band structure and spectra of optical constants. The spectral dependencies of real and imaginary components of dielectric function, refractive index, extinction coefficient, absorption coefficient and loss function were plotted in the 0-12 eV spectral range. The revealed structural, electronic and optical characteristics were discussed taking into account the previously reported theoretical and experimental studies on the Bi12SiO20 sillenite.

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