Determination of trapping parameters of thermoluminescent glow peaks of semiconducting Tl<sub>2</sub>Ga<sub>2</sub>S<sub>3</sub>Se crystals

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Date

2015

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Pergamon-elsevier Science Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature. (C) 2015 Elsevier Ltd. All rights reserved.

Description

Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;

Keywords

Semiconductors, Crystal growth, Luminescence, Defects

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Citation

5

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Q2

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Volume

82

Issue

Start Page

56

End Page

59

URI

https://doi.org/10.1016/j.jpcs.2015.03.007
 https://hdl.handle.net/20.500.14411/820

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