Determination of Trapping Parameters of Thermoluminescent Glow Peaks of Semiconducting Tl<sub>2</Sub>ga<sub>2< Crystals
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Yildirim, T. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.contributor.other | 15. Graduate School of Natural and Applied Sciences | |
| dc.contributor.other | 01. Atılım University | |
| dc.date.accessioned | 2024-07-05T14:32:30Z | |
| dc.date.available | 2024-07-05T14:32:30Z | |
| dc.date.issued | 2015 | |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; | en_US |
| dc.description.abstract | Thermoluminescence (TL) properties of Tl2Ga2S3Se layered single crystals were researched in the temperature range of 290-770 K. U glow curve exhibited two peaks with maximum temperatures of similar to 373 and 478 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers associated with these peaks. Applied methods were in good agreement with the energies of 780 and 950 meV. Capture cross sections and attempt-to-escape frequencies of the trapping centers were reported. An energy level diagram showing transitions in the band gap of the crystal was plotted under the light of the results of the present work and previously reported papers on photoluminescence, thermoluminescence and thermally stimulated current measurements carried out below room temperature. (C) 2015 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jpcs.2015.03.007 | |
| dc.identifier.issn | 0022-3697 | |
| dc.identifier.issn | 1879-2553 | |
| dc.identifier.scopus | 2-s2.0-84925061587 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jpcs.2015.03.007 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/820 | |
| dc.language.iso | en | en_US |
| dc.publisher | Pergamon-elsevier Science Ltd | en_US |
| dc.relation.ispartof | Journal of Physics and Chemistry of Solids | |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Crystal growth | en_US |
| dc.subject | Luminescence | en_US |
| dc.subject | Defects | en_US |
| dc.title | Determination of Trapping Parameters of Thermoluminescent Glow Peaks of Semiconducting Tl<sub>2</Sub>ga<sub>2< Crystals | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.institutional | Işık, Mehmet | |
| gdc.author.scopusid | 23766993100 | |
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| gdc.author.wosid | Gasanly, Nizami/HRE-1447-2023 | |
| gdc.author.wosid | Gasanly, Nizami/ABA-2249-2020 | |
| gdc.author.wosid | Isik, Mehmet/KMY-5305-2024 | |
| gdc.author.wosid | YILDIRIM, Tacettin/KMX-4607-2024 | |
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| gdc.description.department | Atılım University | en_US |
| gdc.description.departmenttemp | [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Yildirim, T.] Nevsehir Haci Bektas Veli Univ, Dept Phys, TR-50300 Nevsehir, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan | en_US |
| gdc.description.endpage | 59 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.startpage | 56 | en_US |
| gdc.description.volume | 82 | en_US |
| gdc.description.wosquality | Q2 | |
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| gdc.oaire.keywords | Luminescence | |
| gdc.oaire.keywords | Semiconductors | |
| gdc.oaire.keywords | Defects | |
| gdc.oaire.keywords | Crystal growth | |
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