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Article Citation - WoS: 7Citation - Scopus: 7Dynamical and Passive Characteristics of the Ag/Tlgases Rf Resonators(Wiley-v C H verlag Gmbh, 2012) Qasrawi, A. F.; Elayyat, S. M. S.; Gasanly, N. M.Ag contacts on the surface of the TlGaSeS single crystals are observed to exhibit Schottky characteristics. The ideality factor of the Ag/ TlGaSeS/Ag device decreased from 5.2 to 1.3 by the reduction of series resistance effect on the I-V characteristics. Cheung's model analysis revealed a series resistance and barrier height of 40.6 KO and 0.32 V, respectively. The device was run on the passive mode by injection with an alternating ac signal of variable frequency in the frequency range of 0-120 MHz and recoding the device capacitance. Several resonance-antiresonance positions in the range of 27-350 KHz were observed. The tangent loss factor of the passive device was observed to decrease with increasing frequency. It exhibited a very low loss value of the order of 10-5 at 120 MHz. Such property is a characteristic of high performance tunable device being suitable as processor clock controller.Article Citation - WoS: 10Citation - Scopus: 14Impedance Spectroscopic Analysis of the Inse/Znse Interface(Ieee-inst Electrical Electronics Engineers inc, 2017) Al Garni, Sabah E.; Qasrawi, Atef F.In this paper, n-InSe/p-ZnSe/n-InSe (npn) thin-film transistors (TFTs) are deposited onto cubic (111)-oriented Ag, Au, and Al thin-film substrates. The properties of the structures are explored by means of X-ray diffraction and impedance spectroscopy in the frequency range of 10-1800 MHz. Although the Ag, Au, and Al substrates are observed to be well aligned with the cubic ZnSe, the electrical properties of these TFT for the np (InSe/ZnSe) and npn interfaces are different. Namely, while the capacitance of the TFT deposited onto the Ag substrate exhibited positive values, the capacitance of the TFT deposited onto Au and Al films is negative in the range of 10-1100 and 800-1800 MHz, respectively. In addition, even though the impedance of the Ag/np/Ag and Ag/npn/Ag heterojunction monotonically decreasedwith the increasing frequency, the impedance of Au/np/Au and Au/npn/Au interfaces exhibited resonance peaks at 1211 and 1148 MHz, respectively. When the wave trap features are read from reflection spectra, it is observed that the Ag/npn/Ag and the Al/np/Ag exhibit lowpass filter properties and the Au/npn/Au behaves as a bandstop filter at a notch frequency of 1176 MHz. These properties nominate the npn transistors for use as microwave traps and as high-speed CMOS amplifiers.
