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Article Citation - WoS: 2Citation - Scopus: 2Dielectric and Optoelectronic Properties of Inse/Cds Heterojunctions(Springer, 2018) Abusaa, M.; Qasrawi, A. F.; Shehada, Sufyan R.The effect of an InSe substrate on the structural, optical and dielectric properties of CdS/CdSe heterojunctions prepared by physical vapor deposition technique under vacuum pressure of 10(-8) bar are reported. The structural analysis carried out by x-ray diffraction revealed a strained type of growth of the CdS/CdSe heterojunction onto the InSe along the axis of the hexagonal lattice. The lattice mismatches and strained nature of the heterojunctions associated with the InSe participation causes a quantum confinement that results in a red shift in the energy band gap, enhanced near infrared (IR) light absorbability, and valence band offsets of 0.62eV and 0.53eV for the InSe/CdS and CdS/CdSe interfaces, respectively. In addition, a pronounced enhancement in the real part of the dielectric constant by 2.5 times is observed at 1.25eV. Furthermore, the Durde-Lorentz modeling of the optical conductivity of the CdS/CdSe and InSe/CdS/CdSe reveals significant increases in the drift mobility values from 43.8cm(2)/Vs at the CdS/CdSe interface to 100.0cm(2/)Vs upon replacement of glass by an amorphous InSe substrate. The other optical conduction parameters including the free carrier scattering time at the femtosecond level, the plasmon frequency and the free carrier density are also improved accordingly. The photocurrent illumination intensity dependence for the studied system showed that the presence of InSe increases the photocurrent values and changes the recombination mechanism from sublinear at the surface to trap-assisted recombination. The smart feature of the InSe/CdS/CdSe system is that the structurally controlled quantum confinement results in having mobile photocarriers arising from the enhanced absorbability and large dielectric response in the IR region.Article Citation - WoS: 2Citation - Scopus: 2Performance of Ge-Sandwiched Gase Layers(Springer, 2018) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Abdallah, Maisam M. A.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringIn the current work, we report the effect of sandwiching Ge between two stacked layers of GaSe. The GaSe and Ge-sandwiched GaSe were subjected to x-ray diffraction, optical spectrophotometry and impedance spectroscopy measurement and analysis. The presence of a Ge layer between two layers of GaSe was observed to cause uniform deformation and increase the absorption of light by GaSe. The response of the dielectric constant to incident light was also significantly enhanced by Ge sandwiching. In addition, Drude-Lorentz modeling of the imaginary part of the dielectric constant revealed that the layer of Ge layer between GaSe layers increased the drift mobility from 30.76 cm(2)/Vs to 52.49 cm(2)/Vs. It also enhanced the plasmon frequency without altering the free carrier density. Moreover, Ge improved the band filtering features of GaSe. In particular, it enhanced the sensitivity of the impedance response to the incident signal and increased the return loss factor of GaSe when it was used as a high band pass filter.Article Citation - WoS: 6Citation - Scopus: 6Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices(Wiley-v C H verlag Gmbh, 2015) Al Garni, S. E.; Qasrawi, A. F.In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.Article Citation - WoS: 3Citation - Scopus: 4Structural and Optical Properties of the Zns/Gase Heterojunctions(Iop Publishing Ltd, 2017) Alharbi, S. R.; Abdallaha, Maisam M. A.; Qasrawi, A. F.In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies.Article Citation - WoS: 4Citation - Scopus: 4Optical Characterization of the Mgo/Inse Interface(Wiley-v C H verlag Gmbh, 2015) Kayed, T. S.; Qasrawi, A. F.; Elsayed, Khaled A.In this work, a 500nm thick MgO layer deposited on the physically evaporated amorphous InSe thin film substrate is designed as a window for the MgO/InSe terahertz resonators. The optical properties including the reflectance and the dielectric constant dependence on the angle of incidence ((i)), the normal transmittance, and the absorption coefficient of the interface were investigated in the range of approximate to 270-1000THz. It was observed that the total reflectivity of the substrate continuously decreases with increasing (i) in the range of 33-80 degrees. The spectra of InSe and MgO/InSe revealed strong dielectric resonance patterns below 450THz. The energy bands of the direct allowed transitions in InSe film shrunk from 3.90, 2.75, and 1.49eV to 3.71, 2.10, and 0.96eV when MgO was deposited onto the InSe film. By analyzing the dielectric spectra, we were able to determine the static and lattice dielectric constants in addition to the oscillator and dispersion energies. The latter energy increased from 27.43 to 35.84 via interface construction.Article Citation - WoS: 5Citation - Scopus: 4Properties of Se/Inse Thin-Film Interface(Springer, 2016) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Elsayed, Khaled A.; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringSe, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.Article Citation - WoS: 8Citation - Scopus: 8Optical Interactions in the Inse/Cdse Interface(Wiley-v C H verlag Gmbh, 2016) Qasrawi, A. F.; Rabbaa, S.In this work, the structural and optical properties of the InSe/CdSe heterojunction are investigated by means of X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The hexagonal CdSe films that were deposited onto amorphous InSe and onto glass substrates at a vacuum pressure of 10(-5)mbar, exhibited interesting optical characteristics. Namely, the absorption, transmission, and reflection spectra that were recorded in the incident light wavelength range of 300-1100nm, for the InSe, CdSe, and InSe/CdSe interface revealed direct allowed transition energy bandgaps of 1.44, 1.85, and 1.52eV, respectively. The valence-band offset for the interface is found to be 0.36eV. On the other hand, the dielectric constant spectral analysis displayed a large increase in the real part of the dielectric constant associated with decreasing frequency below 500THz. In addition, the optical conductivity spectra that were analyzed and modeled in accordance with the Drude theory displayed a free-carrier average scattering time of 0.4fs and a drift mobility of 6.65cm(2)V(-1)s(-1) for the InSe/CdSe interface. The features of this interface nominate it as a promising member for the production of optoelectronic Schottky channels and as thin-film transistors.
