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Subject: coatingWoS Q: Q3

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    Citation - WoS: 6
    Citation - Scopus: 6
    Design and characterization of (Al, C)/p-Ge/p-BN/C isotype resonant electronic devices
    (Wiley-v C H verlag Gmbh, 2015) Al Garni, S. E.; Qasrawi, A. F.
    In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.
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    Article
    Citation - WoS: 12
    Citation - Scopus: 14
    Coating of Titanium Implants With Boron Nitride by Rf-Magnetron Sputtering
    (indian Acad Sciences, 2016) Gokmenoglu, Ceren; Ozmeric, Nurdan; Cakal, Gaye; Dokmetas, Nihan; Ergene, Cansu; Kaftanoglu, Bilgin
    Surface modification is necessary for titanium implants since it is unable to induce bone apposition. The beneficial effects of boron on bone formation, composition and physical properties make it suitable as a coating material. In the present study, surface properties of boron nitride (BN) coating on titanium implants were evaluated. Twenty-four implants and 12 abutments were coated with BN by RF-magnetron sputtering system. ATR-FTIR measurements were conducted to assess surface chemistry and morphology of BN-coated implants. Adhesion tests were performed by CSM nanoscratch test device to determine adhesion of BN to titanium surface. Surface profilometry and atomic force microscopy (AFM) was used to evaluate surface roughness. Mean roughness values were calculated. Contact angle measurements were done for evaluation of wettability. Surface characterization of coated implants was repeated after RF power of the system was increased and voltage values were changed to evaluate if these settings have an impact on coating quality. Three different voltage values were used for this purpose. Hexagonal-BN was determined in FTIR spectra. RF-coating technique provided adequate adherence of BN coatings to the titanium surface. A uniform BN coating layer was formed on the titanium implants with no deformation on the titanium surface. Similar roughness values were maintained after BN coating procedure. Before coating, the contact angles of the implants were in between 63(ay) and 79(ay), whereas BN coated implants' contact angles ranged between 46(ay) and 67(ay). BN-coated implant surfaces still have hydrophilic characteristics. The change in voltage values seemed to affect the surface coating characteristics. Especially, the phase of the BN coating was different when different voltages were used. According to our results, BN coating can be sufficiently performed on pretreated implant surfaces and the characteristics of BN coated surfaces can be changed with the change in parameters of RF-magnetron sputtering system.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Structural and Optical Properties of the Zns/Gase Heterojunctions
    (Iop Publishing Ltd, 2017) Alharbi, S. R.; Abdallaha, Maisam M. A.; Qasrawi, A. F.
    In the current work, the ZnS/GaSe thin film heterojunction interfaces are experimentally designed and characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy and optical spectroscopy techniques. The heterojunction is observed to exhibit physical nature of formation with an induced crystallization of GaSe by the ZnS substrate. For this heterojunction, the hot probe technique suggested the formation of a p-ZnS/n-GaSe interface. In addition, the designed energy band diagram of the heterojunction which was actualized with the help of the optical spectrophotometric data analysis revealed a respective conduction and valence band offsets of 0.67 and 0.73 eV. On the other hand, the dielectric dispersion analysis and modeling which was studied in the frequency range of 270-1000 THz, have shown that the interfacing of the ZnS with GaSe strongly affects the properties of ZnS as it reduces the number of free carriers, shifts down the plasmon frequency, increases the charge carrier scattering time and results in higher values of drift mobility at Terahertz frequencies.