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Article Citation - WoS: 3EFFECT OF Y, Au AND YAu NANOSANDWICHING ON THE STRUCTURAL, OPTICAL AND DIELECTRIC PROPERTIES OF ZnSe THIN FILMS(Natl inst R&d Materials Physics, 2019) Qasrawi, A. F.; Taleb, M. F.In this article, we report the effects of insertion of yttrium, gold and yttrium-gold (YAu) metallic nano-slabs on the structural, optical and dielectric properties of ZnSe thin films. The ZnSe thin films which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar exhibit hexagonal structure. While the insertion of the 70 nm thick Y layers does not alter the lattice parameters and stress values, the Au and YAu layers increased the lattice parameters along the a- and c-axes and decreased the stress values. In addition, the insertion of these metallic layers slightly alters the value of the energy band gap and increases the width of the interbands. The light absorbability are increased by 1.4, 2.0 and 2.4 times upon insertion of Y, Au and YAu, slabs, respectively. On the other hand, the dielectric and optical conductivity analyses has shown that the use of the YAu stacked metal layers increases the real part of the dielectric constant, the optical conductivity, the drift mobility and extended the plasmon frequency range from 35.1 to 254.0 (Omega cm)(-1), from 1098 to 1766 cm(2)/vs and from 0.94-3.11 GHz to 2.13-4.83 GHz, respectively. The insertion of the two stacked metallic layers between two layers of ZnSe makes the ZnSe more appropriated for thin film transistor technology.Article Citation - WoS: 14Citation - Scopus: 13Enhancement of Electrical Performance of Znse Thin Films Via Au Nanosandwiching(Sciendo, 2020) Qasrawi, A. F.; Taleb, Maram F.In this work, we report the effect of sandwiching of Au nanosheets on the structural and electrical properties of ZnSe thin films. The ZnSe films which are grown by the thermal evaporation technique onto glass and yttrium thin film substrates exhibit lattice deformation accompanied with lattice constant extension, grain size reduction and increased defect density upon Au nanosandwiching. The temperature dependent direct current conductivity analysis has shown that the 70 nm thick Au layers successfully increased the electrical conductivity by three orders of magnitude without causing degeneracy. On the other hand, the alternating current conductivity studies in the frequency domain of 10 MHz to 1800 MHz have shown that the alternating current conduction in ZnSe is dominated by both of quantum mechanical tunneling and correlated barrier hopping of electrons over the energy barriers formed at the grain boundaries. The Au nanosheets are observed to increase the density of localized states near Fermi level and reduce the average hopping energy by similar to 5 times. The conductivity, capacitance, impedance and reflection coefficient spectral analyses have shown that the nanosandwiching of Au between two layers of ZnSe makes the zinc selenide more appropriate for electronic applications and for applications which need microwave cavities.Article Citation - Scopus: 3Effect of Y, Au and Yau Nanosandwiching on the Structural, Optical and Dielectric Properties of Znse Thin Films(S.C. Virtual Company of Phisics S.R.L, 2019) Qasrawi,A.F.; Taleb,M.F.In this article, we report the effects of insertion of yttrium, gold and yttrium-gold (YAu) metallic nano-slabs on the structural, optical and dielectric properties of ZnSe thin films. The ZnSe thin films which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar exhibit hexagonal structure. While the insertion of the 70 nm thick Y layers does not alter the lattice parameters and stress values, the Au and YAu layers increased the lattice parameters along the a- and c-axes and decreased the stress values. In addition, the insertion of these metallic layers slightly alters the value of the energy band gap and increases the width of the interbands. The light absorbability are increased by 1.4, 2.0 and 2.4 times upon insertion of Y, Au and YAu, slabs, respectively. On the other hand, the dielectric and optical conductivity analyses has shown that the use of the YAu stacked metal layers increases the real part of the dielectric constant, the optical conductivity, the drift mobility and extended the plasmon frequency range from 35.1 to 254.0 (Ωcm)−1, from 1098 to 1766 cm2/Vs and from 0.94-3.11 GHz to 2.13-4.83 GHz, respectively. The insertion of the two stacked metallic layers between two layers of ZnSe makes the ZnSe more appropriated for thin film transistor technology. © 2019, S.C. Virtual Company of Phisics S.R.L. All right reserved.
