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Citation - WoS: 3
Citation - Scopus: 4
Effects of Ge Substrate on the Structural and Optical Conductivity Parameters of Bi₂o_{3< Thin Films}
(Elsevier Gmbh, 2019) Alharbi, S. R.; Qasrawi, A. F.
In this article the structural, optical and dielectric properties of a 200 nm thick Bi2O3 thin films which are deposited onto amorphous germanium substrate are reported. Both of the Ge and Bi2O3 thin films are prepared by the thermal evaporation technique under vacuum pressure of 10 s mbar. Bi2O3 thin films are found to prefer the monoclinic nature of structure with larger values of microstrain, dislocation density, stacking faults and smaller grain sizes upon replacement of the glass substrate by germanium. Optically, significant redshift in the energy band gap is observed when the films are grown onto Ge. The Ge/Bi2O3 heterojunctions exhibit a conduction and valence band offsets of value of 0.81 and 1.38 eV, respectively. In addition to the enhancement in the dielectric constant near the IR region, the Drude-Lorentz modeling of the Ge/Bi2O3 heterojunctions has shown remarkable effect of the Ge substrate on the optical conductivity parameters of Bi2O3. Particularly, the drift mobility increased by about one order of magnitude, the free hole density decreased by (similar to)24 times and the plasmon frequency ranges extended from 5.21 to 11.0 GHz to 2.59-12.80 GHz when germanium substrate is used. The optical features of the heterojunction nominate it for visible light communication technology.
Citation - WoS: 9
Citation - Scopus: 9
Optical Dynamics in the Ag/Α-ga_{2< Layer System}
(Elsevier Sci Ltd, 2018) Alharbi, S. R.; Qasrawi, A. F.
In this work, thin films of Ga2S3 are deposited onto 150 nm thick transparent Ag substrate by the physical vapor deposition technique under vacuum pressure of 10(-5) mbar. The films are studied by the X-ray diffraction and optical spectrophotometry techniques. It is found that the Ag substrate induced the formation of the monoclinic alpha-Ga2S3 polycrystals. The transparent Ag substrate also changed the preferred optical transition in Ga2S3 from direct to indirect It also increased the light absorption by 79 and 23 times at incident light energies of 2.01 and 2.48 eV, respectively. In addition, a red shift in all types of optical transitions is observed. Some the extended energy band tails of Ag appears to form interbands in the band gap of Ga2S3. These interbands strongly attenuated the dielectric and optical conduction parameters. Particularly, an enhancement in the dielectric constant values and response to incident electromagnetic field is observed. The Drude-Lorentz modeling of this interface has shown that the free carrier density, drift mobility, plasmon frequency and reduced electron-plasmon frequency in Ga2S3 increases when the Ag substrate replaced the glass or other metals like Yb, Al and Au. The nonlinear optical dynamics of the Ag/Ga2S3 are promising as they indicate the applicability of this interface for optoelectronic applications.
Citation - WoS: 3
Citation - Scopus: 3
Observation of in Situ Enhanced Crystallization, Negative Resistance Effect and Photosensitivity in Tl₂ingase_{4< Crystals}
(Elsevier Sci Ltd, 2021) Qasrawi, A. F.; Irshaid, Tahani M. A.; Gasanly, N. M.
In this work, we report the properties of Tl2InGaSe4 crystals as multifunctional material. Namely, Tl2InGaSe4 crystals are grown by the modified Bridgman method using mixtures of TlInSe2 (50%) and TlGaSe2 (50%) single crystals. The enhanced crystallization and structural stabilities are monitored by the X-ray diffraction technique during the in situ heating and cooling cycles. The structural analyses on the Tl2InGaSe4 crystals revealed domination of both of the monoclinic and tetragonal phases in the crystals. In addition, the produced crystals are used to fabricate Schottky diodes. While the scanning electron microscopy has shown that the crystals are composed of layered nanosheets, the electrical analyses have shown that the crystals exhibit light photosensitivity of 12.7 under tungsten light illumination of 10 kLuxes. The attenuation in the electrical parameters of the Ag/Tl2InGaSe4/C diodes presented by series resistance, barrier height and ideality factor upon light excitations make them promising for applications in optoelectronics as switches and photodetectors. Moreover, the alternating electrical signals analyses on the capacitance spectra displayed resonance -antiresonance oscillations in the frequency domain of 83-100 MHz. The resistance spectra also exhibited negative resistance effect in the range of 55-135 MHz. These features of the device make it suitable for use as microwave resonators and memory devices as well.
Citation - WoS: 26
Citation - Scopus: 26
Fabrication and Some Physical Properties of Agin₅s_{8< Thin Films}
(Elsevier Science Sa, 2004) Qasrawi, AF; Kayed, TS; Ercan, I
AgIn5S8 thin films are deposited on glass substrates, kept at 300 K, by thermal evaporation of AgIn5S8 single crystals under the pressure of 10-5 Torr. The X-ray fluorescence analysis revealed that the films have a weight percentage of similar to11.5% Ag, 61.17% In, and 27.33% S which corresponds to 1:5:8 stoichiometric composition. X-ray analysis of the films reveals the polycrystalline nature of the films. The lattice parameter (a) of the films was calculated to be 10.784(5) Angstrom. The dark n-type electrical conductivity of the films was measured in the temperature range of 30-350 K. The conductivity data analysis shows that the thermionic emission of the charge carriers having activation energies of 147 and 224 meV in the temperature ranges of 130-230 and 240-350 K, respectively, are the dominant transport mechanism in the films. The variable range hopping transport mechanism is dominant below 130 K. The room temperature photocurrent-photon energy dependency predicts a band gap of 1.91 eV of the films. The illumination intensity-photocurrent dependency measured in the intensity range of 13-235 W cm(-2) reveals monomolecular recombination (linear) in the films and bimolecular recombination (sublinear) at the film surface corresponding to low and high applied illumination intensities, respectively. The time-dependant photocurrent measured at fixed illumination intensity reveals a response time of 0.85, 2.66 and 10.0 s in the time periods of 0-0.5, 0.5-1.0, and 1.0-10.0 s, respectively. (C) 2004 Elsevier B.V. All rights reserved.
Citation - WoS: 1
Citation - Scopus: 1
Characterization of T1ins1.8se0.2 as Advanced Functional Crystals
(Elsevier Sci Ltd, 2018) Qasrawi, A. F.; Atatreh, Areen A. M.; Gasanly, N. M.
In this work, selenium doped TlInS1.8Se0.2 crystals are used to fabricate multifunctional devices that can handle more than one duty at a time. After revealing the morphological, compositional, structural and optical properties of the doped crystal, it is sandwiched between Ag and carbon metals. The crystals are characterized by means of ultraviolet-visible light spectrophotometry, impedance spectroscopy and illumination dependent current-voltage characteristics techniques. While the optical spectroscopy allowed determining the energy band gap of the crystals as well as the optical conductivity in the terahertz frequency domain, the impedance spectroscopy allowed identifying the conductance and reflectance spectra in the gigahertz frequency domain. The two techniques reveal promising characteristics presented by optical switching at 2.20 eV and band pass filtering properties in mega/gigahertz frequency domains. On the other hand, the analysis of the current (I)- voltage (V) characteristics which are recorded in the dark and under photoexcitation of unfiltered tungsten light in the light power range of 25-130 mW, revealed light intensity dependent rectifying properties. Particularly, the modeling of the experimental I-V curves in accordance with the Richardson Schottky and Chueng's theoretical approaches have shown that the Schottky diode ideality factor, series resistance and barrier height decreases with increasing light power. Such behavior indicates wide tunability of the device when used as photosensors. With the features presented by small size, photosensitivity, gigahertz/terahertz spectral responses, the device can be promising element for use in visible light and microwave communications.

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