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Article Citation - WoS: 11Citation - Scopus: 13Optical and Structural Characteristics of Electrodeposited Cd1-xznx< Nanostructured Thin Films(Elsevier, 2021) Erturk, K.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.The structural and optical characteristics of Cd1-xZnxS (CdZnS) thin films grown by the electrodeposition method were investigated in the present paper. The crystalline structure of the grown CdZnS thin film was determined as cubic wurtzite due to observed diffraction peaks associated with (111) and (220) planes. Atomic compositional ratios of the constituent elements were obtained using energy dispersive spectroscopy and doping concentration of the Zn was found as 5% (x similar to 0.05). Scanning electron microscopy image of the studied thin film indicated that grown film is nanostructured. Raman spectra of CdS and CdZnS thin films were measured and it was seen that observed longitudinal optical modes for CdZnS present a blue-shift. Temperature-dependent band gap energy characteristics of the thin films were studied performing transmission experiments in the 10-300 K temperature range. The analyses of the recorded transmittance spectra showed that direct band gap energy of the films decreases from 2.56 eV (10 K) to 2.51 eV (300 K) with the increase of temperature. The band gap energy vs. temperature dependency was studied applying well-known Varshni optical model and various optical parameters of the films were reported according to the results of the applied model.Article Citation - WoS: 8Citation - Scopus: 7Structural and Optical Characteristics of Thermally Evaporated Tlgase2 Thin Films(Elsevier, 2022) Isik, M.; Işık, Mehmet; Karatay, A.; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringThe present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00 degrees which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope image, the film surface was observed almost uniform. Raman spectrum exhibited six peaks around 253, 356, 488, 800, 1053 and 1440 cm(-1) associated with possible vibrational mode combinations. Band gap energy of the thin film was determined as 3.01 eV from the analyses of transmission spectrum. Transmission spectrum presented strong Urbach tail and analyses of corresponding region resulted in Urbach energy of 0.66 eV. The structural and optical properties of deposited TlGaSe2 thin films were compared with those of single crystal. This comparison would provide valuable information about influence of thickness on the studied compounds.
